JP4902433B2 - 研磨装置の研磨面加熱、冷却装置 - Google Patents
研磨装置の研磨面加熱、冷却装置 Download PDFInfo
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- JP4902433B2 JP4902433B2 JP2007156851A JP2007156851A JP4902433B2 JP 4902433 B2 JP4902433 B2 JP 4902433B2 JP 2007156851 A JP2007156851 A JP 2007156851A JP 2007156851 A JP2007156851 A JP 2007156851A JP 4902433 B2 JP4902433 B2 JP 4902433B2
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- 238000005498 polishing Methods 0.000 title claims description 284
- 238000001816 cooling Methods 0.000 title claims description 38
- 238000010438 heat treatment Methods 0.000 title claims description 31
- 239000007788 liquid Substances 0.000 claims description 29
- 230000007246 mechanism Effects 0.000 claims description 28
- 239000000498 cooling water Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 10
- 239000002826 coolant Substances 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- 230000005855 radiation Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Description
長尺状突起部32a、32cの頂部が接触しない研磨パッド13の研磨面の面積を広くとることができる。また、長尺状突起部32a、32cを図14に示すように渦巻状に設けてもよい。これにより、長尺状突起部32a、32cの研磨パッド13の研磨面に対するダメージを均等にすることが可能となる。また、長尺状突起部32a、32cの渦巻きの方向は、スラリーSが内側に流入する方向とする。このような構成により、スラリー(研磨液)が研磨面上に保持されやすくなり、スラリーを節約することができる。また、複数の長尺状突起部32aはスラリーSが内側に流入する方向に配置するであれば、その半径等は限定されない。例えば、同一半径の複数の円弧を、中心をずらして配置するようにしてもよい。
11 回転軸
12 定盤
13 研磨パッド
14 被研磨物保持機構
15 回転軸
16 保持機構アーム
17 旋回軸
18 ドレッサー
20 熱交換体
21 熱交換体支持アーム
22 旋回軸
23 研磨液供給ノズル
31 熱交換体本体
32 底板
33 熱媒体流路
34 熱交換媒体入口
35 熱交換媒体出口
36 シール部材
37 シール部材
40 熱交換体保持機構
41 支持機構
42 支持ピン
43 支持ピン
44 板部材
45 バネ部材
46 バネ部材
47 バネ部材
48 バネ部材
49 ストッパー
50 ストッパー
Claims (5)
- 研磨面上に保持機構で保持された被研磨物を押し付けると共に、該研磨面に研磨液を供給し、前記研磨面と前記被研磨物の相対運動により該被研磨物を研磨する構成の研磨装置の前記研磨面の加熱又は冷却を行なう研磨装置の研磨面加熱、冷却装置であって、
前記被研磨物の研磨時、前記研磨面に対向して配置される熱交換体を備え、
前記熱交換体は内部に熱交換媒体を通す熱交換媒体流路が形成されており、前記研磨面に対向する底面の全部又は一部が前記研磨面の進行方向に向かって上方に離間するように所定角度傾斜した傾斜面又は複数の段差面となっており、
前記被研磨物の研磨時、前記研磨面と前記熱交換体底面との間に流入する前記研磨液により前記熱交換体は揚力を受けると共に、前記研磨面と前記熱交換体内の熱交換媒体流路を流れる熱交換媒体の間で熱交換を行い前記研磨面を加熱又は冷却することを特徴とする研磨装置の研磨面加熱、冷却装置。 - 請求項1に記載の研磨装置の研磨面加熱、冷却装置において、
前記熱交換体の底面には長尺突起部が所定の間隔で複数本設けられ、該長尺突起部と長尺突起部の間が前記研磨液の流路となっていることを特徴とする研磨装置の研磨面加熱、冷却装置。 - 請求項1又は2に記載の研磨装置の研磨面加熱、冷却装置において、
前記熱交換体は押圧機構を具備する熱交換体保持機構により、前記被研磨物の研磨時、前記研磨面の所定位置に押圧配置されることを特徴とする研磨装置の研磨面加熱、冷却装置。 - 請求項1乃至3のいずれか1項に記載の研磨装置の研磨面加熱、冷却装置において、
前記熱交換体の構成材料は、SiCであることを特徴とする研磨装置の研磨面加熱、冷却装置。 - 請求項1乃至4のいずれか1項に記載の研磨装置の研磨面加熱、冷却装置において、
前記熱交換体の熱交換媒体流路に流す熱交換媒体は冷却水であり、前記被研磨物の研磨時、前記冷却水と前記研磨面の間で熱交換を行い該研磨面を加熱又は冷却とすることを特徴とする研磨装置の研磨面加熱、冷却装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007156851A JP4902433B2 (ja) | 2007-06-13 | 2007-06-13 | 研磨装置の研磨面加熱、冷却装置 |
TW097120413A TWI456642B (zh) | 2007-06-13 | 2008-06-02 | 研磨裝置之研磨面的加熱/冷卻裝置 |
US12/155,618 US7837534B2 (en) | 2007-06-13 | 2008-06-06 | Apparatus for heating or cooling a polishing surface of a polishing apparatus |
KR1020080054936A KR101384259B1 (ko) | 2007-06-13 | 2008-06-12 | 연마장치의 연마면 가열 또는 냉각장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007156851A JP4902433B2 (ja) | 2007-06-13 | 2007-06-13 | 研磨装置の研磨面加熱、冷却装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008307630A JP2008307630A (ja) | 2008-12-25 |
JP4902433B2 true JP4902433B2 (ja) | 2012-03-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007156851A Active JP4902433B2 (ja) | 2007-06-13 | 2007-06-13 | 研磨装置の研磨面加熱、冷却装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7837534B2 (ja) |
JP (1) | JP4902433B2 (ja) |
KR (1) | KR101384259B1 (ja) |
TW (1) | TWI456642B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10950469B2 (en) | 2018-03-15 | 2021-03-16 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
US11577357B2 (en) | 2018-11-28 | 2023-02-14 | Ebara Corporation | Temperature adjusting device and polishing device |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106304289B (zh) * | 2008-06-13 | 2019-10-22 | 华为技术有限公司 | 一种指示不连续调度数据的方法、装置及系统 |
KR101067608B1 (ko) * | 2009-03-30 | 2011-09-27 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 및 기판처리방법 |
JP5547472B2 (ja) * | 2009-12-28 | 2014-07-16 | 株式会社荏原製作所 | 基板研磨装置、基板研磨方法、及び基板研磨装置の研磨パッド面温調装置 |
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JP5775797B2 (ja) * | 2011-11-09 | 2015-09-09 | 株式会社荏原製作所 | 研磨装置および方法 |
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JP2013042066A (ja) * | 2011-08-19 | 2013-02-28 | Toshiba Corp | 半導体装置の製造方法 |
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JP6376085B2 (ja) * | 2015-09-03 | 2018-08-22 | 信越半導体株式会社 | 研磨方法及び研磨装置 |
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JP2018192555A (ja) * | 2017-05-16 | 2018-12-06 | 三重富士通セミコンダクター株式会社 | 研磨装置及び研磨方法 |
JP2019029562A (ja) * | 2017-08-01 | 2019-02-21 | 株式会社荏原製作所 | 基板処理装置 |
US20190126428A1 (en) * | 2017-10-31 | 2019-05-02 | Ebara Corporation | Heat exchanger for regulating temperature of polishing surface of polishing pad, polishing apparatus having such heat exchanger, polishing method for substrate using such heat exchanger, and computer-readable storage medium storing a program for regulating temperature of polishing surface of polishing pad |
US10875148B2 (en) | 2018-06-08 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and methods for chemical mechanical polishing |
JP7287987B2 (ja) * | 2018-06-27 | 2023-06-06 | アプライド マテリアルズ インコーポレイテッド | 化学機械研磨の温度制御 |
TWI834195B (zh) | 2019-04-18 | 2024-03-01 | 美商應用材料股份有限公司 | Cmp期間基於溫度的原位邊緣不對稱校正的電腦可讀取儲存媒體 |
JP7217202B2 (ja) * | 2019-05-31 | 2023-02-02 | 株式会社荏原製作所 | 温度調整装置および研磨装置 |
US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
TWI826280B (zh) | 2019-11-22 | 2023-12-11 | 美商應用材料股份有限公司 | 在拋光墊中使用溝槽的晶圓邊緣不對稱校正 |
JP7421413B2 (ja) * | 2020-05-08 | 2024-01-24 | 株式会社荏原製作所 | パッド温度調整装置、パッド温度調整方法、および研磨装置 |
JP2022149635A (ja) * | 2021-03-25 | 2022-10-07 | 株式会社荏原製作所 | パッド温度調整装置、および研磨装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4313284A (en) * | 1980-03-27 | 1982-02-02 | Monsanto Company | Apparatus for improving flatness of polished wafers |
US4450652A (en) * | 1981-09-04 | 1984-05-29 | Monsanto Company | Temperature control for wafer polishing |
US5127196A (en) * | 1990-03-01 | 1992-07-07 | Intel Corporation | Apparatus for planarizing a dielectric formed over a semiconductor substrate |
US5607718A (en) * | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
JPH09123057A (ja) * | 1995-10-31 | 1997-05-13 | Sony Corp | 基板研磨装置 |
JPH09204653A (ja) * | 1996-01-24 | 1997-08-05 | Sony Corp | 磁気ディスク及び磁気ディスク装置 |
JPH1027326A (ja) * | 1996-07-11 | 1998-01-27 | Sony Corp | 浮上型ヘッドスライダ及び磁気ディスク装置 |
JP3672685B2 (ja) * | 1996-11-29 | 2005-07-20 | 松下電器産業株式会社 | 研磨方法及び研磨装置 |
US5957750A (en) * | 1997-12-18 | 1999-09-28 | Micron Technology, Inc. | Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates |
JPH11347935A (ja) | 1998-06-10 | 1999-12-21 | Ebara Corp | 研磨装置 |
JP2001062706A (ja) | 1999-08-25 | 2001-03-13 | Nikon Corp | 研磨装置 |
US6422921B1 (en) * | 1999-10-22 | 2002-07-23 | Applied Materials, Inc. | Heat activated detachable polishing pad |
US20020009953A1 (en) * | 2000-06-15 | 2002-01-24 | Leland Swanson | Control of CMP removal rate uniformity by selective heating of pad area |
JP4421100B2 (ja) * | 2000-12-21 | 2010-02-24 | 不二越機械工業株式会社 | シリコンウェーハの研磨砥粒液の温度調整方法 |
TW541224B (en) * | 2001-12-14 | 2003-07-11 | Promos Technologies Inc | Chemical mechanical polishing (CMP) apparatus with temperature control |
US20030119427A1 (en) * | 2001-12-20 | 2003-06-26 | Misra Sudhanshu Rid | Temprature compensated chemical mechanical polishing apparatus and method |
US6896586B2 (en) * | 2002-03-29 | 2005-05-24 | Lam Research Corporation | Method and apparatus for heating polishing pad |
KR20030095465A (ko) * | 2002-06-10 | 2003-12-24 | 삼성전자주식회사 | 화학적 기계적 연마 장치 |
US7169014B2 (en) * | 2002-07-18 | 2007-01-30 | Micron Technology, Inc. | Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces |
JP4448297B2 (ja) * | 2002-12-27 | 2010-04-07 | 株式会社荏原製作所 | 基板研磨装置及び基板研磨方法 |
JP2005040920A (ja) | 2003-07-25 | 2005-02-17 | Sony Corp | 研磨装置および研磨方法 |
KR100564616B1 (ko) * | 2004-02-27 | 2006-03-28 | 삼성전자주식회사 | 디스크 드라이브의 공기 베어링 슬라이더 및 이를 구비한서스펜션 조립체 |
US7201634B1 (en) * | 2005-11-14 | 2007-04-10 | Infineon Technologies Ag | Polishing methods and apparatus |
JP2007136560A (ja) * | 2005-11-15 | 2007-06-07 | Hamai Co Ltd | 平面研磨装置 |
DE102007041209B4 (de) * | 2007-08-31 | 2017-11-23 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Polierkopf, der Zonenkontrolle verwendet |
US8439723B2 (en) * | 2008-08-11 | 2013-05-14 | Applied Materials, Inc. | Chemical mechanical polisher with heater and method |
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2007
- 2007-06-13 JP JP2007156851A patent/JP4902433B2/ja active Active
-
2008
- 2008-06-02 TW TW097120413A patent/TWI456642B/zh active
- 2008-06-06 US US12/155,618 patent/US7837534B2/en active Active
- 2008-06-12 KR KR1020080054936A patent/KR101384259B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10950469B2 (en) | 2018-03-15 | 2021-03-16 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
US11577357B2 (en) | 2018-11-28 | 2023-02-14 | Ebara Corporation | Temperature adjusting device and polishing device |
Also Published As
Publication number | Publication date |
---|---|
KR20080109649A (ko) | 2008-12-17 |
JP2008307630A (ja) | 2008-12-25 |
TW200910441A (en) | 2009-03-01 |
KR101384259B1 (ko) | 2014-04-11 |
TWI456642B (zh) | 2014-10-11 |
US20080311823A1 (en) | 2008-12-18 |
US7837534B2 (en) | 2010-11-23 |
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