JP6376085B2 - 研磨方法及び研磨装置 - Google Patents
研磨方法及び研磨装置 Download PDFInfo
- Publication number
- JP6376085B2 JP6376085B2 JP2015173929A JP2015173929A JP6376085B2 JP 6376085 B2 JP6376085 B2 JP 6376085B2 JP 2015173929 A JP2015173929 A JP 2015173929A JP 2015173929 A JP2015173929 A JP 2015173929A JP 6376085 B2 JP6376085 B2 JP 6376085B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- surface plate
- flow rate
- wafer
- refrigerant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 163
- 238000000034 method Methods 0.000 title claims description 15
- 239000003507 refrigerant Substances 0.000 claims description 54
- 239000004744 fabric Substances 0.000 claims description 34
- 239000007788 liquid Substances 0.000 claims description 33
- 238000007517 polishing process Methods 0.000 claims description 31
- 239000002826 coolant Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 56
- 230000000052 comparative effect Effects 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000000498 cooling water Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 238000003754 machining Methods 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
本発明の研磨装置を使用して、本発明の研磨方法に従い直径450mmのシリコンウェーハの研磨を行った。すなわち、先の研磨終了後、次の研磨を開始するまでの待機時に、冷媒の流量を、研磨時の冷媒の流量未満に制御し、かつ、モーターにより定盤を回転させ、かつ、室温以上に調温された保水液を研磨布に供給した。また、次の研磨を開始する前に、ダミー研磨は行わなかった。
待機時に、冷媒の流量を研磨時の冷媒の流量と同じとし、定盤を回転させず、かつ、室温未満に調温された保水液を研磨布に供給したこと以外、実施例1と同様な条件でシリコンウェーハの研磨を実施した。その後、実施例1と同様な方法で、待機後の研磨加工において研磨したウェーハの取り代及び平坦度を測定し、各ウェーハ間の取り代及び平坦度のばらつきを評価した。
実施例1とは別に、実施例1と同じ条件でシリコンウェーハの研磨を行った。その際に、待機時における定盤の温度変化を測定し、後述の比較例2の待機時における定盤の温度変化と比較した。
待機時に定盤回転を行わなかったこと以外、実施例2と同じ条件でシリコンウェーハの研磨を行った。その際に、待機時における定盤の温度変化を測定し、実施例2の待機時における定盤の温度変化と比較した。
実施例1、2とは別に、実施例1と同じ条件でシリコンウェーハの研磨を行った。その際に、待機時における定盤の温度変化を測定し、後述の比較例3の待機時における定盤の温度変化と比較した。
待機時の冷媒の流量を研磨時と同じ4.5L/minとしたこと以外、実施例3と同じ条件でシリコンウェーハの研磨を行った。その際に、待機時における定盤の温度変化を測定し、実施例3の待機時における定盤の温度変化と比較した。
実施例1〜3とは別に、実施例1と同じ条件でシリコンウェーハの研磨を行った。その際に、待機時における定盤の温度変化を測定し、後述の比較例4の待機時における定盤の温度変化と比較した。
待機時の保水液の温度を室温未満の20℃としたこと以外、実施例4と同じ条件でシリコンウェーハの研磨を行った。その際に、待機時における定盤の温度変化を測定し、実施例4の待機時における定盤の温度変化と比較した。
本発明の研磨装置において、シリコンウェーハの研磨終了後、定盤を待機させ、待機時の定盤の温度変化を測定した。待機時の冷媒の流量を1.0L/min、定盤の回転数を5rpm、保水液の温度を25℃とした。なお、研磨時の冷媒の流量は4.5L/min、室温は23℃であった。
待機時の各定盤において、冷媒の流量を研磨時と同じ4.5L/min、定盤回転数を0rpm(停止状態)、保水液の温度を20℃(すなわち、室温である23℃より低温)としたこと以外、実施例2と同様に、シリコンウェーハの研磨終了後、定盤を待機させ、待機時の定盤の温度変化を測定した。
4…保持手段、 5…冷媒流路、 6…モーター、 7…定盤制御部、
8…流量調整弁、 9…保水液供給機構、 10…研磨剤供給機構、
W…ウェーハ。
Claims (6)
- モーターにより回転駆動する定盤に設けられた冷媒流路に冷媒を供給して前記定盤を冷却しながら、保持手段により保持したウェーハを、前記定盤に貼り付けられた研磨布に摺接させることで研磨加工を行う研磨方法であって、
前記ウェーハの研磨加工終了後であって、次のウェーハの研磨加工を実施する前である待機時に、
前記冷媒の流量を、前記ウェーハの研磨加工を実施している研磨時の前記冷媒の流量未満に制御し、かつ、前記モーターにより前記定盤を回転させ、かつ、室温以上に調温された保水液を前記研磨布に供給することを特徴とする研磨方法。 - 前記待機時の前記冷媒の流量を、前記研磨時の前記冷媒の流量の1/4以下とすることを特徴とする請求項1に記載の研磨方法。
- 前記研磨加工を、複数の定盤を有し、各定盤で前記研磨加工を行う研磨装置を用いて行うことを特徴とする請求項1又は請求項2に記載の研磨方法。
- モーターにより回転駆動し、冷媒流路が設けられた定盤と、前記定盤に貼り付けられた研磨布と、ウェーハを保持する保持手段とを具備し、前記冷媒流路に冷媒を供給して前記定盤を冷却しながら、該保持手段により保持した前記ウェーハを、前記定盤に貼り付けられた前記研磨布に摺接させることで研磨加工を実施する研磨装置であって、
前記定盤の前記冷媒流路に供給する冷媒の流量を制御する流量調整弁と、
前記定盤の回転を制御する定盤制御部と、
前記ウェーハの研磨加工終了後であって、次のウェーハの研磨加工を実施する前である待機時に、前記研磨布を保水するための保水液を前記研磨布に供給する保水液供給機構とを有し、
前記流量調整弁が、前記待機時の前記冷媒の流量を、前記ウェーハの研磨加工を実施している研磨時の前記冷媒の流量未満に制御するものであり、
前記定盤制御部が、前記待機時も前記モーターにより前記定盤を回転させるものであり、
前記保水液供給機構が、室温以上に調温された前記保水液を前記待機時に前記研磨布に供給するものであることを特徴とする研磨装置。 - 前記流量調整弁が、前記待機時の前記冷媒の流量を、前記研磨時の前記冷媒の流量の1/4以下に制御するものであることを特徴とする請求項4に記載の研磨装置。
- 前記定盤を複数有し、各定盤上で前記研磨加工を行うものであることを特徴とする請求項4又は請求項5に記載の研磨装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015173929A JP6376085B2 (ja) | 2015-09-03 | 2015-09-03 | 研磨方法及び研磨装置 |
US15/751,990 US10537972B2 (en) | 2015-09-03 | 2016-08-16 | Polishing method and polishing apparatus |
DE112016003359.1T DE112016003359T5 (de) | 2015-09-03 | 2016-08-16 | Polierverfahren und Poliervorrichtung |
CN201680048100.9A CN107921606B (zh) | 2015-09-03 | 2016-08-16 | 研磨方法以及研磨装置 |
PCT/JP2016/003745 WO2017038032A1 (ja) | 2015-09-03 | 2016-08-16 | 研磨方法及び研磨装置 |
SG11201801292PA SG11201801292PA (en) | 2015-09-03 | 2016-08-16 | Polishing method and polishing apparatus |
KR1020187006099A KR102545528B1 (ko) | 2015-09-03 | 2016-08-16 | 연마방법 및 연마장치 |
TW105126477A TWI694893B (zh) | 2015-09-03 | 2016-08-19 | 研磨方法以及研磨裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015173929A JP6376085B2 (ja) | 2015-09-03 | 2015-09-03 | 研磨方法及び研磨装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017047513A JP2017047513A (ja) | 2017-03-09 |
JP2017047513A5 JP2017047513A5 (ja) | 2018-03-22 |
JP6376085B2 true JP6376085B2 (ja) | 2018-08-22 |
Family
ID=58186949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015173929A Active JP6376085B2 (ja) | 2015-09-03 | 2015-09-03 | 研磨方法及び研磨装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10537972B2 (ja) |
JP (1) | JP6376085B2 (ja) |
KR (1) | KR102545528B1 (ja) |
CN (1) | CN107921606B (ja) |
DE (1) | DE112016003359T5 (ja) |
SG (1) | SG11201801292PA (ja) |
TW (1) | TWI694893B (ja) |
WO (1) | WO2017038032A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6883475B2 (ja) | 2017-06-06 | 2021-06-09 | 株式会社荏原製作所 | 研磨テーブル及びこれを備える研磨装置 |
CN115943016A (zh) * | 2020-07-14 | 2023-04-07 | 应用材料公司 | 在化学机械抛光期间检测不合格衬底处理事件的方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4313284A (en) * | 1980-03-27 | 1982-02-02 | Monsanto Company | Apparatus for improving flatness of polished wafers |
US4450652A (en) * | 1981-09-04 | 1984-05-29 | Monsanto Company | Temperature control for wafer polishing |
JPH0699350A (ja) * | 1992-09-18 | 1994-04-12 | Toshiba Mach Co Ltd | 定盤の温度制御方法 |
US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
JP2850803B2 (ja) * | 1995-08-01 | 1999-01-27 | 信越半導体株式会社 | ウエーハ研磨方法 |
JP2862073B2 (ja) * | 1995-12-08 | 1999-02-24 | 日本電気株式会社 | ウェハー研磨方法 |
JP3672685B2 (ja) * | 1996-11-29 | 2005-07-20 | 松下電器産業株式会社 | 研磨方法及び研磨装置 |
US6121144A (en) * | 1997-12-29 | 2000-09-19 | Intel Corporation | Low temperature chemical mechanical polishing of dielectric materials |
JP2000202765A (ja) * | 1999-01-12 | 2000-07-25 | Ebara Corp | ポリッシング装置用研磨剤流量計の洗浄装置及び洗浄方法及びポリッシング装置 |
US6224461B1 (en) * | 1999-03-29 | 2001-05-01 | Lam Research Corporation | Method and apparatus for stabilizing the process temperature during chemical mechanical polishing |
JP2000301440A (ja) * | 1999-04-22 | 2000-10-31 | Toshiba Ceramics Co Ltd | 平面研削装置およびこれを用いた半導体ウェーハの研削方法 |
US6358119B1 (en) * | 1999-06-21 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | Way to remove CU line damage after CU CMP |
TW458849B (en) * | 1999-07-23 | 2001-10-11 | Applied Materials Inc | Temperature control device for chemical mechanical polishing |
US6299516B1 (en) * | 1999-09-28 | 2001-10-09 | Applied Materials, Inc. | Substrate polishing article |
DE60136759D1 (de) * | 2000-01-31 | 2009-01-08 | Shinetsu Handotai Kk | Polierverfahren |
JP2002093756A (ja) * | 2000-07-27 | 2002-03-29 | Agere Systems Guardian Corp | 化学的機械的平面化プロセス用研磨面温度調整システム |
US6485359B1 (en) * | 2000-09-15 | 2002-11-26 | Applied Materials, Inc. | Platen arrangement for a chemical-mechanical planarization apparatus |
TW542049U (en) * | 2001-07-18 | 2003-07-11 | Taiwan Semiconductor Mfg | Apparatus for preventing CMP polishing slurry from scraping wafer |
JP4186692B2 (ja) * | 2003-05-08 | 2008-11-26 | ソニー株式会社 | 研磨装置 |
US20040266192A1 (en) * | 2003-06-30 | 2004-12-30 | Lam Research Corporation | Application of heated slurry for CMP |
JP2006239808A (ja) * | 2005-03-03 | 2006-09-14 | Nec Electronics Corp | 研磨装置 |
JP4757580B2 (ja) * | 2005-09-16 | 2011-08-24 | 株式会社荏原製作所 | 研磨方法及び研磨装置、並びに研磨装置制御用プログラム |
KR100755011B1 (ko) * | 2005-12-14 | 2007-09-06 | 주식회사 실트론 | 연마용 정반, 이를 사용한 연마장치 및 연마방법 |
JP4902433B2 (ja) * | 2007-06-13 | 2012-03-21 | 株式会社荏原製作所 | 研磨装置の研磨面加熱、冷却装置 |
DE102007063232B4 (de) * | 2007-12-31 | 2023-06-22 | Advanced Micro Devices, Inc. | Verfahren zum Polieren eines Substrats |
US8172641B2 (en) * | 2008-07-17 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP by controlling polish temperature |
JP5632132B2 (ja) * | 2009-02-27 | 2014-11-26 | 株式会社荏原製作所 | 基板処理方法 |
TWI613037B (zh) * | 2011-07-19 | 2018-02-01 | 荏原製作所股份有限公司 | 硏磨方法 |
JP2013099814A (ja) * | 2011-11-08 | 2013-05-23 | Toshiba Corp | 研磨方法及び研磨装置 |
US9005999B2 (en) * | 2012-06-30 | 2015-04-14 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
TWI540624B (zh) * | 2012-07-25 | 2016-07-01 | 應用材料股份有限公司 | 化學機械研磨的溫度控制 |
CN103753380B (zh) * | 2013-12-18 | 2016-04-20 | 河南科技学院 | 基于无线传输的化学机械抛光界面温度检测控制系统 |
-
2015
- 2015-09-03 JP JP2015173929A patent/JP6376085B2/ja active Active
-
2016
- 2016-08-16 CN CN201680048100.9A patent/CN107921606B/zh active Active
- 2016-08-16 SG SG11201801292PA patent/SG11201801292PA/en unknown
- 2016-08-16 KR KR1020187006099A patent/KR102545528B1/ko active IP Right Grant
- 2016-08-16 US US15/751,990 patent/US10537972B2/en active Active
- 2016-08-16 DE DE112016003359.1T patent/DE112016003359T5/de active Pending
- 2016-08-16 WO PCT/JP2016/003745 patent/WO2017038032A1/ja active Application Filing
- 2016-08-19 TW TW105126477A patent/TWI694893B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR102545528B1 (ko) | 2023-06-20 |
DE112016003359T5 (de) | 2018-04-05 |
CN107921606B (zh) | 2019-07-09 |
TWI694893B (zh) | 2020-06-01 |
CN107921606A (zh) | 2018-04-17 |
TW201711806A (zh) | 2017-04-01 |
KR20180048668A (ko) | 2018-05-10 |
JP2017047513A (ja) | 2017-03-09 |
WO2017038032A1 (ja) | 2017-03-09 |
US10537972B2 (en) | 2020-01-21 |
US20180229344A1 (en) | 2018-08-16 |
SG11201801292PA (en) | 2018-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110546740B (zh) | 硅晶圆的研磨方法 | |
JP5695963B2 (ja) | 研磨方法 | |
JP2021502904A (ja) | 化学機械研磨の温度制御 | |
JP6376085B2 (ja) | 研磨方法及び研磨装置 | |
US20120220195A1 (en) | Cmp apparatus, polishing pad and cmp method | |
US20100144249A1 (en) | Polishing apparatus | |
JP2012166274A (ja) | 研磨装置 | |
US20240149388A1 (en) | Temperature Control in Chemical Mechanical Polish | |
JP6007553B2 (ja) | ウエーハの研磨方法 | |
KR100780099B1 (ko) | 연마용 워크지지반, 연마장치 및 연마방법 | |
JP2008036784A (ja) | 研磨方法および研磨装置 | |
KR102299152B1 (ko) | 연마방법 | |
JP2000015561A (ja) | 研磨装置 | |
US20040266192A1 (en) | Application of heated slurry for CMP | |
JP2017047513A5 (ja) | ||
JP2018032714A (ja) | 研磨装置及びウェーハの研磨方法 | |
JP2020037181A (ja) | ウェハの高精度加工装置 | |
JP7264039B2 (ja) | 研磨ヘッド、化学的機械的研磨装置、および、化学的機械的研磨方法 | |
JP2019102687A (ja) | 研磨装置 | |
KR100840655B1 (ko) | 화학기계적 연마장치 | |
KR20090044491A (ko) | 반도체 소자의 제조방법 | |
JP2000158330A (ja) | 高平坦度材料製造装置 | |
JP2000218515A (ja) | 研磨加工機 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170817 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180206 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180626 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180709 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6376085 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |