SG10201401960RA - Semiconductor device bonding wire - Google Patents

Semiconductor device bonding wire

Info

Publication number
SG10201401960RA
SG10201401960RA SG10201401960RA SG10201401960RA SG10201401960RA SG 10201401960R A SG10201401960R A SG 10201401960RA SG 10201401960R A SG10201401960R A SG 10201401960RA SG 10201401960R A SG10201401960R A SG 10201401960RA SG 10201401960R A SG10201401960R A SG 10201401960RA
Authority
SG
Singapore
Prior art keywords
semiconductor device
bonding wire
device bonding
wire
semiconductor
Prior art date
Application number
SG10201401960RA
Other languages
English (en)
Inventor
Tomohiro Uno
Keiichi Kimura
Shinichi Terashima
Takashi Yamada
Akihito Nishibayashi
Original Assignee
Nippon Steel & Sumikin Mat Co
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40281416&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG10201401960R(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nippon Steel & Sumikin Mat Co, Nippon Micrometal Corp filed Critical Nippon Steel & Sumikin Mat Co
Publication of SG10201401960RA publication Critical patent/SG10201401960RA/en

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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20105—Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20106—Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K
    • H—ELECTRICITY
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    • H01L2924/20—Parameters
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    • H01L2924/20107—Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
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    • H01L2924/20—Parameters
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    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
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    • H—ELECTRICITY
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    • H01L2924/20—Parameters
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    • H01L2924/20757—Diameter ranges larger or equal to 70 microns less than 80 microns
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20758—Diameter ranges larger or equal to 80 microns less than 90 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20759—Diameter ranges larger or equal to 90 microns less than 100 microns
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/386—Wire effects
    • H01L2924/3861—Sag
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EP2950335A3 (en) 2016-03-30
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US8102061B2 (en) 2012-01-24
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JP4719300B2 (ja) 2011-07-06
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