SE8900611D0 - Method of encapsulating conductors - Google Patents

Method of encapsulating conductors

Info

Publication number
SE8900611D0
SE8900611D0 SE8900611A SE8900611A SE8900611D0 SE 8900611 D0 SE8900611 D0 SE 8900611D0 SE 8900611 A SE8900611 A SE 8900611A SE 8900611 A SE8900611 A SE 8900611A SE 8900611 D0 SE8900611 D0 SE 8900611D0
Authority
SE
Sweden
Prior art keywords
mask
substrate
constricted
neck portion
metal layers
Prior art date
Application number
SE8900611A
Other languages
English (en)
Other versions
SE8900611L (sv
SE467811B (sv
Inventor
J Rudeke
R Miller
Original Assignee
Avx Corp
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avx Corp, Ibm filed Critical Avx Corp
Publication of SE8900611D0 publication Critical patent/SE8900611D0/sv
Publication of SE8900611L publication Critical patent/SE8900611L/sv
Publication of SE467811B publication Critical patent/SE467811B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
    • H01G13/006—Apparatus or processes for applying terminals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Ceramic Capacitors (AREA)
SE8900611A 1988-06-22 1989-02-22 Saett att aastadkomma oeverlagrade eller inkapslade metalliska ledningsbanor SE467811B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/209,588 US4830723A (en) 1988-06-22 1988-06-22 Method of encapsulating conductors

Publications (3)

Publication Number Publication Date
SE8900611D0 true SE8900611D0 (sv) 1989-02-22
SE8900611L SE8900611L (sv) 1989-12-23
SE467811B SE467811B (sv) 1992-09-14

Family

ID=22779385

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8900611A SE467811B (sv) 1988-06-22 1989-02-22 Saett att aastadkomma oeverlagrade eller inkapslade metalliska ledningsbanor

Country Status (12)

Country Link
US (1) US4830723A (sv)
JP (1) JPH01321612A (sv)
KR (1) KR900000499A (sv)
BR (1) BR8901600A (sv)
CH (1) CH678378A5 (sv)
DE (1) DE3906018A1 (sv)
ES (1) ES2010414A6 (sv)
FR (1) FR2633453B1 (sv)
GB (1) GB2220108B (sv)
IT (1) IT1229172B (sv)
NL (1) NL8900367A (sv)
SE (1) SE467811B (sv)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69016799D1 (de) * 1989-02-23 1995-03-23 Inax Corp Verfahren zum Herstellen von Verbundblöcken.
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
IL102120A (en) * 1992-06-05 1994-08-26 Persys Technology Ltd Mask, assembly and method that enable quality control of equipment for the production of semiconductor slice chips
US5427983A (en) * 1992-12-29 1995-06-27 International Business Machines Corporation Process for corrosion free multi-layer metal conductors
US5484640A (en) * 1994-02-16 1996-01-16 Eldim, Inc. Honeycomb structure having stiffening ribs and method and apparatus for making same
US6344234B1 (en) * 1995-06-07 2002-02-05 International Business Machines Corportion Method for forming reflowed solder ball with low melting point metal cap
US5863396A (en) * 1996-10-25 1999-01-26 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
US6153491A (en) * 1997-05-29 2000-11-28 International Business Machines Corporation Overhanging separator for self-defining discontinuous film
US6000270A (en) * 1997-06-03 1999-12-14 Sjm Engineering, Inc. Collimator having tapered edges and method of making the same
US6266229B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
US6292350B1 (en) 1997-11-10 2001-09-18 Murata Manufacturing, Co., Ltd Multilayer capacitor
JP2991175B2 (ja) 1997-11-10 1999-12-20 株式会社村田製作所 積層コンデンサ
US6266228B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
US6549395B1 (en) 1997-11-14 2003-04-15 Murata Manufacturing Co., Ltd Multilayer capacitor
US6051273A (en) * 1997-11-18 2000-04-18 International Business Machines Corporation Method for forming features upon a substrate
US6030513A (en) * 1997-12-05 2000-02-29 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6096404A (en) * 1997-12-05 2000-08-01 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
JP3476127B2 (ja) 1999-05-10 2003-12-10 株式会社村田製作所 積層コンデンサ
JP3548821B2 (ja) 1999-05-10 2004-07-28 株式会社村田製作所 積層コンデンサ、ならびにこれを用いた電子装置および高周波回路
US6327134B1 (en) 1999-10-18 2001-12-04 Murata Manufacturing Co., Ltd. Multi-layer capacitor, wiring board, and high-frequency circuit
JP3489729B2 (ja) 1999-11-19 2004-01-26 株式会社村田製作所 積層コンデンサ、配線基板、デカップリング回路および高周波回路
JP3901122B2 (ja) * 2003-05-07 2007-04-04 ソニー株式会社 アルカリ電池の負極カップの製法
EP1653788A1 (de) * 2004-10-28 2006-05-03 Delphi Technologies, Inc. Schattenmaske zur erzeugung eines elektrisch leitenden bereiches auf einem dreidimensionalen schaltungsträger
US8242878B2 (en) 2008-09-05 2012-08-14 Vishay Dale Electronics, Inc. Resistor and method for making same
US9142533B2 (en) * 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024041A (en) * 1974-12-18 1977-05-17 Hitachi, Ltd. Method of forming deposition films for use in multi-layer metallization
US4561954A (en) * 1985-01-22 1985-12-31 Avx Corporation Method of applying terminations to ceramic bodies
US4741077A (en) * 1987-05-15 1988-05-03 Sfe Technologies End terminations for capacitors
US4740863A (en) * 1987-05-15 1988-04-26 Sfe Technologies Current-limiting thin film termination for capacitors

Also Published As

Publication number Publication date
GB2220108B (en) 1992-12-09
FR2633453A1 (fr) 1989-12-29
GB2220108A (en) 1989-12-28
GB8902168D0 (en) 1989-03-22
NL8900367A (nl) 1990-01-16
IT1229172B (it) 1991-07-22
FR2633453B1 (fr) 1992-11-06
BR8901600A (pt) 1990-04-10
CH678378A5 (sv) 1991-08-30
KR900000499A (ko) 1990-01-30
SE8900611L (sv) 1989-12-23
IT8920087A0 (it) 1989-04-10
US4830723A (en) 1989-05-16
SE467811B (sv) 1992-09-14
JPH01321612A (ja) 1989-12-27
ES2010414A6 (es) 1989-11-01
DE3906018A1 (de) 1989-12-28

Similar Documents

Publication Publication Date Title
SE8900611D0 (sv) Method of encapsulating conductors
DE3478171D1 (en) A method of producing a layered structure
ATE50379T1 (de) Verfahren zur herstellung koplanarer viellagenmetall-isolator-schichten auf einem substrat.
KR960019663A (ko) 집적 회로의 멀티 레벨 메탈리제이션 제조 방법
TW368685B (en) Method of fabricating bump electrode
TW328167B (en) Method for manufacturing lead frame
JPS57138638A (en) Photoetching mask
JPS57118681A (en) Manufacture of semiconductor light emitting diode
JPS5785247A (en) Formation of fetch electrode
JPS55138856A (en) Method of fabricating semiconductor device
JPS57188884A (en) Formation of recessed minute multilayer gate electrode
JPS52123871A (en) Thin film forming method
KR970008265A (ko) 금속이 코팅된 3극 필드 에미터 제조방법
JPS5662337A (en) Production of wiring and electrode
JPS57188880A (en) Formation of recess-type micro-multilayer gate electrode
JPS6412554A (en) Manufacture of semiconductor device
JPS5756915A (en) Forming method for magnetic layer pattern
JPS57188882A (en) Formation of recess-type micro-multilayer gate electrode
JPS554970A (en) Formation of electrode or wiring layer on substrate
JPS55107781A (en) Etching method for metal film
JPS6439026A (en) Formation of electrode
TW354418B (en) A method for preventing the increasing of a un-grounding contact window resistance
JPS51121280A (en) Manufacturing method for semiconductor devices
JPS6415952A (en) Manufacture of semiconductor device
KR960008525B1 (en) Manufacturing method of metal wiring layer pattern

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 8900611-8

Effective date: 19930912

Format of ref document f/p: F