JPS6415952A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6415952A
JPS6415952A JP17217387A JP17217387A JPS6415952A JP S6415952 A JPS6415952 A JP S6415952A JP 17217387 A JP17217387 A JP 17217387A JP 17217387 A JP17217387 A JP 17217387A JP S6415952 A JPS6415952 A JP S6415952A
Authority
JP
Japan
Prior art keywords
film
plasma nitride
nitride film
insulating film
inter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17217387A
Other languages
Japanese (ja)
Inventor
Takeshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17217387A priority Critical patent/JPS6415952A/en
Publication of JPS6415952A publication Critical patent/JPS6415952A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the yield of products by a method wherein, in a process of forming an inter-layer insulating film between the first and second wiring layers on a semiconductor substrate, a laser beam is applied so as to make the surface of the insulating film planar, thereby precluding the steps of the inter-layer insulating film surface. CONSTITUTION:After an oxide film 2 is formed on a semiconductor substrate 1 on which elements were formed, it is selectively etched, and on the oxide film 2 an aluminum film 3, for instance, is formed as a first wiring. This aluminium film 3 is deposited by a sputtering method or an electron beam evaporation method. On this wiring pattern, a plasma nitride film 4 is deposited using SiH4 and NH3 gasses. Then, the laser beam is reduced and applied from the laterally of the plasma nitride film 4 to fuse the plasma nitride film 4. At this fusing, the surface of the plasma nitride film 4 is made flat.
JP17217387A 1987-07-10 1987-07-10 Manufacture of semiconductor device Pending JPS6415952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17217387A JPS6415952A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17217387A JPS6415952A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6415952A true JPS6415952A (en) 1989-01-19

Family

ID=15936923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17217387A Pending JPS6415952A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6415952A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294854A (en) * 2006-03-29 2007-11-08 Fujitsu Ltd Interface roughness mitigating film, forming material of interface roughness mitigating film, wiring layer and semiconductor device employing these film and material as well as manufacturing method of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526619A (en) * 1978-08-15 1980-02-26 Toshiba Corp Method of producing semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526619A (en) * 1978-08-15 1980-02-26 Toshiba Corp Method of producing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294854A (en) * 2006-03-29 2007-11-08 Fujitsu Ltd Interface roughness mitigating film, forming material of interface roughness mitigating film, wiring layer and semiconductor device employing these film and material as well as manufacturing method of semiconductor device

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