JPS6415952A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6415952A JPS6415952A JP17217387A JP17217387A JPS6415952A JP S6415952 A JPS6415952 A JP S6415952A JP 17217387 A JP17217387 A JP 17217387A JP 17217387 A JP17217387 A JP 17217387A JP S6415952 A JPS6415952 A JP S6415952A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma nitride
- nitride film
- insulating film
- inter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve the yield of products by a method wherein, in a process of forming an inter-layer insulating film between the first and second wiring layers on a semiconductor substrate, a laser beam is applied so as to make the surface of the insulating film planar, thereby precluding the steps of the inter-layer insulating film surface. CONSTITUTION:After an oxide film 2 is formed on a semiconductor substrate 1 on which elements were formed, it is selectively etched, and on the oxide film 2 an aluminum film 3, for instance, is formed as a first wiring. This aluminium film 3 is deposited by a sputtering method or an electron beam evaporation method. On this wiring pattern, a plasma nitride film 4 is deposited using SiH4 and NH3 gasses. Then, the laser beam is reduced and applied from the laterally of the plasma nitride film 4 to fuse the plasma nitride film 4. At this fusing, the surface of the plasma nitride film 4 is made flat.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17217387A JPS6415952A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17217387A JPS6415952A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415952A true JPS6415952A (en) | 1989-01-19 |
Family
ID=15936923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17217387A Pending JPS6415952A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415952A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007294854A (en) * | 2006-03-29 | 2007-11-08 | Fujitsu Ltd | Interface roughness mitigating film, forming material of interface roughness mitigating film, wiring layer and semiconductor device employing these film and material as well as manufacturing method of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5526619A (en) * | 1978-08-15 | 1980-02-26 | Toshiba Corp | Method of producing semiconductor device |
-
1987
- 1987-07-10 JP JP17217387A patent/JPS6415952A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5526619A (en) * | 1978-08-15 | 1980-02-26 | Toshiba Corp | Method of producing semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007294854A (en) * | 2006-03-29 | 2007-11-08 | Fujitsu Ltd | Interface roughness mitigating film, forming material of interface roughness mitigating film, wiring layer and semiconductor device employing these film and material as well as manufacturing method of semiconductor device |
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