IT1229172B - Metodo per incapsulare conduttori - Google Patents

Metodo per incapsulare conduttori

Info

Publication number
IT1229172B
IT1229172B IT8920087A IT2008789A IT1229172B IT 1229172 B IT1229172 B IT 1229172B IT 8920087 A IT8920087 A IT 8920087A IT 2008789 A IT2008789 A IT 2008789A IT 1229172 B IT1229172 B IT 1229172B
Authority
IT
Italy
Prior art keywords
encapsulating
conductors
encapsulating conductors
Prior art date
Application number
IT8920087A
Other languages
English (en)
Other versions
IT8920087A0 (it
Inventor
John Galvagni
Robert Miller
Original Assignee
Avx Corp
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avx Corp, Ibm filed Critical Avx Corp
Publication of IT8920087A0 publication Critical patent/IT8920087A0/it
Application granted granted Critical
Publication of IT1229172B publication Critical patent/IT1229172B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
    • H01G13/006—Apparatus or processes for applying terminals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Ceramic Capacitors (AREA)
IT8920087A 1988-06-22 1989-04-10 Metodo per incapsulare conduttori IT1229172B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/209,588 US4830723A (en) 1988-06-22 1988-06-22 Method of encapsulating conductors

Publications (2)

Publication Number Publication Date
IT8920087A0 IT8920087A0 (it) 1989-04-10
IT1229172B true IT1229172B (it) 1991-07-22

Family

ID=22779385

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8920087A IT1229172B (it) 1988-06-22 1989-04-10 Metodo per incapsulare conduttori

Country Status (12)

Country Link
US (1) US4830723A (it)
JP (1) JPH01321612A (it)
KR (1) KR900000499A (it)
BR (1) BR8901600A (it)
CH (1) CH678378A5 (it)
DE (1) DE3906018A1 (it)
ES (1) ES2010414A6 (it)
FR (1) FR2633453B1 (it)
GB (1) GB2220108B (it)
IT (1) IT1229172B (it)
NL (1) NL8900367A (it)
SE (1) SE467811B (it)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU632307B2 (en) * 1989-02-23 1992-12-24 Chiyoda Technical & Industrial Co., Ltd. System for making composite blocks
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
IL102120A (en) * 1992-06-05 1994-08-26 Persys Technology Ltd Mask, assembly and method that enable quality control of equipment for the production of semiconductor slice chips
US5427983A (en) * 1992-12-29 1995-06-27 International Business Machines Corporation Process for corrosion free multi-layer metal conductors
US5484640A (en) * 1994-02-16 1996-01-16 Eldim, Inc. Honeycomb structure having stiffening ribs and method and apparatus for making same
US6344234B1 (en) * 1995-06-07 2002-02-05 International Business Machines Corportion Method for forming reflowed solder ball with low melting point metal cap
US5863396A (en) * 1996-10-25 1999-01-26 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
US6153491A (en) * 1997-05-29 2000-11-28 International Business Machines Corporation Overhanging separator for self-defining discontinuous film
US6000270A (en) * 1997-06-03 1999-12-14 Sjm Engineering, Inc. Collimator having tapered edges and method of making the same
US6292350B1 (en) 1997-11-10 2001-09-18 Murata Manufacturing, Co., Ltd Multilayer capacitor
US6266229B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
JP2991175B2 (ja) 1997-11-10 1999-12-20 株式会社村田製作所 積層コンデンサ
US6266228B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
US6549395B1 (en) 1997-11-14 2003-04-15 Murata Manufacturing Co., Ltd Multilayer capacitor
US6051273A (en) * 1997-11-18 2000-04-18 International Business Machines Corporation Method for forming features upon a substrate
US6030513A (en) * 1997-12-05 2000-02-29 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6096404A (en) * 1997-12-05 2000-08-01 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
JP3476127B2 (ja) 1999-05-10 2003-12-10 株式会社村田製作所 積層コンデンサ
JP3548821B2 (ja) 1999-05-10 2004-07-28 株式会社村田製作所 積層コンデンサ、ならびにこれを用いた電子装置および高周波回路
US6327134B1 (en) 1999-10-18 2001-12-04 Murata Manufacturing Co., Ltd. Multi-layer capacitor, wiring board, and high-frequency circuit
JP3489729B2 (ja) 1999-11-19 2004-01-26 株式会社村田製作所 積層コンデンサ、配線基板、デカップリング回路および高周波回路
JP3901122B2 (ja) * 2003-05-07 2007-04-04 ソニー株式会社 アルカリ電池の負極カップの製法
EP1653788A1 (de) * 2004-10-28 2006-05-03 Delphi Technologies, Inc. Schattenmaske zur erzeugung eines elektrisch leitenden bereiches auf einem dreidimensionalen schaltungsträger
US8242878B2 (en) 2008-09-05 2012-08-14 Vishay Dale Electronics, Inc. Resistor and method for making same
US9142533B2 (en) * 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024041A (en) * 1974-12-18 1977-05-17 Hitachi, Ltd. Method of forming deposition films for use in multi-layer metallization
US4561954A (en) * 1985-01-22 1985-12-31 Avx Corporation Method of applying terminations to ceramic bodies
US4740863A (en) * 1987-05-15 1988-04-26 Sfe Technologies Current-limiting thin film termination for capacitors
US4741077A (en) * 1987-05-15 1988-05-03 Sfe Technologies End terminations for capacitors

Also Published As

Publication number Publication date
NL8900367A (nl) 1990-01-16
GB2220108A (en) 1989-12-28
KR900000499A (ko) 1990-01-30
IT8920087A0 (it) 1989-04-10
GB2220108B (en) 1992-12-09
SE467811B (sv) 1992-09-14
US4830723A (en) 1989-05-16
JPH01321612A (ja) 1989-12-27
SE8900611L (sv) 1989-12-23
CH678378A5 (it) 1991-08-30
DE3906018A1 (de) 1989-12-28
FR2633453A1 (fr) 1989-12-29
BR8901600A (pt) 1990-04-10
FR2633453B1 (fr) 1992-11-06
GB8902168D0 (en) 1989-03-22
ES2010414A6 (es) 1989-11-01
SE8900611D0 (sv) 1989-02-22

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