KR900000499A - 도체를 캡슐화하는 방법 - Google Patents

도체를 캡슐화하는 방법 Download PDF

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Publication number
KR900000499A
KR900000499A KR1019890001623A KR890001623A KR900000499A KR 900000499 A KR900000499 A KR 900000499A KR 1019890001623 A KR1019890001623 A KR 1019890001623A KR 890001623 A KR890001623 A KR 890001623A KR 900000499 A KR900000499 A KR 900000499A
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KR
South Korea
Prior art keywords
metal pattern
mask
substrate
metal
base
Prior art date
Application number
KR1019890001623A
Other languages
English (en)
Inventor
갈바그니 죤
밀러 로버터
Original Assignee
킴 리치
에이브이엑스 코포레이션
하워드 지.피구에로아
아이비엠 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 킴 리치, 에이브이엑스 코포레이션, 하워드 지.피구에로아, 아이비엠 코포레이션 filed Critical 킴 리치
Publication of KR900000499A publication Critical patent/KR900000499A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
    • H01G13/006—Apparatus or processes for applying terminals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Ceramic Capacitors (AREA)

Abstract

내용 없음

Description

도체를 캡슐화하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명에 따른 방법이 유용하게 채택될 수 있는 형태의 전자 소자를 보여주는 개략적 평면도.
제 2도 내지 제5도는 본 발명에 다른 기판 및 마스크와 함께 실시 방법의 단계들을 보여주는 개략적 단면도.

Claims (5)

  1. 적층 또는 캡슐화된 금속을 절연체 기판등에 제공하여 전도성 통로를 형성하는 방법에 있어서, 상하 표면 및 구멍을 구비하고 있고 그 구멍은 하부 표면 구역에 넓은 기부 및 상기 상하 표면 사이에 상기 기부보다 더 작은 치수의 한정된 목 부분을 갖는 마스크 부재를 설치하는 단계, 상기 하부표면이 상기 기판과 계합하도록 상기기판에 대해서 상기 마스크의 위치를 조정하는 단계, 상기 구멍의 목부분의 평면상 치수와 실제로 일치하는 제1의 금속 패턴을 형성하도록 이온 증착 공정으로 상기 마스크를 통해서 제1의 금속 패턴을 증착하는 단계 및 상기 제1의 금속 패턴을 지나쳐 연장하고 상기 구멍의 기부의 평면상 치수와 필수적으로 일치하는 제2의 금속 패턴이 상기 제1의 금속 패턴을 덮어서 상기 제1금속 패턴이 상기 제2금속 패턴아래에 캡슐화되는 관계로 제2의 금속 패턴을 형성하도록 스퍼터링 공정으로 상기 구멍을 통해서 금속 패턴을 증착하는 단계로 구성되는 것을 특징으로 하는 절연체 기판상에 전도성 통로를 제공하는 방법.
  2. 제1항에 있어서, 상기 제1금속 패턴은 상기 마스크를 통해서 상기 기판상에 미리 증탁된 금속 패턴위에 형성되며, 상기 미리 형성된 금속 패턴은 스퍼터링에 의해 형성됐으며 그 폭이 상기 기부의 폭과 거의 일치하는 것을 특징으로 하는 방법.
  3. 횡방향 치수가 다른 적층된 금속 영역을 기판상에 형성하는 방법에 있어서, 상하 표면 및 관통 구멍을 구비하고 있고 그 구멍은 상기하부 표면 구역이 다른 구역보다 더 넓은 것을 특징으로 하는 마스크를 설치하는 단계, 상기 마스크의 하부 표면을 기판에 대해 위치 조정하는 단계, 상기 구멍의 상기 다른 구역과 평면상 치수가 필수적으로 일치하는 금속 패턴을 형성하도록 상기 마스크를 통해서 진공 증착 공정으로 상기 기판위에 제1의 금속층을 증착하는 단계 및 상기 기부의 평면상 치수와 필수적으로 일치하는 금속 패턴을 상기 제1층을 덮는 관계로 형성하도록 상기 마스크를 상기 기판으로부터 제거하지 않고 스퍼터링 공정으로 상기 마스크를 통해서 제2금속층을 상기 기판위에 증착하는 단계로 구성되는 것을 특징으로 하는 방법.
  4. 제3항에 있어서, 상기 제1 및 제2금속 층들을 증착시키기전에 상기 기부의 평면상 치수와 필수적으로 일치하는 금속 패턴을 상기 기판상에 형성하도록 상기 마스크를 통해서 상기 기판상에 기부 금속층을 스퍼터링하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
  5. 제3항에 있어서, 상기 마스크의 상기 구멍이 상부 표면 구역에서의 치수가 상기 마스크의 다른 구역에서의 치수보다 더 큰것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001623A 1988-06-22 1989-02-13 도체를 캡슐화하는 방법 KR900000499A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/209,588 US4830723A (en) 1988-06-22 1988-06-22 Method of encapsulating conductors
US209588 1988-06-22

Publications (1)

Publication Number Publication Date
KR900000499A true KR900000499A (ko) 1990-01-30

Family

ID=22779385

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890001623A KR900000499A (ko) 1988-06-22 1989-02-13 도체를 캡슐화하는 방법

Country Status (12)

Country Link
US (1) US4830723A (ko)
JP (1) JPH01321612A (ko)
KR (1) KR900000499A (ko)
BR (1) BR8901600A (ko)
CH (1) CH678378A5 (ko)
DE (1) DE3906018A1 (ko)
ES (1) ES2010414A6 (ko)
FR (1) FR2633453B1 (ko)
GB (1) GB2220108B (ko)
IT (1) IT1229172B (ko)
NL (1) NL8900367A (ko)
SE (1) SE467811B (ko)

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IL102120A (en) * 1992-06-05 1994-08-26 Persys Technology Ltd Mask, assembly and method that enable quality control of equipment for the production of semiconductor slice chips
US5427983A (en) * 1992-12-29 1995-06-27 International Business Machines Corporation Process for corrosion free multi-layer metal conductors
US5484640A (en) * 1994-02-16 1996-01-16 Eldim, Inc. Honeycomb structure having stiffening ribs and method and apparatus for making same
US6344234B1 (en) * 1995-06-07 2002-02-05 International Business Machines Corportion Method for forming reflowed solder ball with low melting point metal cap
US5863396A (en) * 1996-10-25 1999-01-26 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
US6153491A (en) * 1997-05-29 2000-11-28 International Business Machines Corporation Overhanging separator for self-defining discontinuous film
US6000270A (en) * 1997-06-03 1999-12-14 Sjm Engineering, Inc. Collimator having tapered edges and method of making the same
US6292350B1 (en) 1997-11-10 2001-09-18 Murata Manufacturing, Co., Ltd Multilayer capacitor
US6266228B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
US6266229B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
JP2991175B2 (ja) 1997-11-10 1999-12-20 株式会社村田製作所 積層コンデンサ
US6549395B1 (en) 1997-11-14 2003-04-15 Murata Manufacturing Co., Ltd Multilayer capacitor
US6051273A (en) * 1997-11-18 2000-04-18 International Business Machines Corporation Method for forming features upon a substrate
US6030513A (en) * 1997-12-05 2000-02-29 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6096404A (en) * 1997-12-05 2000-08-01 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
JP3548821B2 (ja) 1999-05-10 2004-07-28 株式会社村田製作所 積層コンデンサ、ならびにこれを用いた電子装置および高周波回路
JP3476127B2 (ja) 1999-05-10 2003-12-10 株式会社村田製作所 積層コンデンサ
US6327134B1 (en) 1999-10-18 2001-12-04 Murata Manufacturing Co., Ltd. Multi-layer capacitor, wiring board, and high-frequency circuit
JP3489729B2 (ja) 1999-11-19 2004-01-26 株式会社村田製作所 積層コンデンサ、配線基板、デカップリング回路および高周波回路
JP3901122B2 (ja) * 2003-05-07 2007-04-04 ソニー株式会社 アルカリ電池の負極カップの製法
EP1653788A1 (de) * 2004-10-28 2006-05-03 Delphi Technologies, Inc. Schattenmaske zur erzeugung eines elektrisch leitenden bereiches auf einem dreidimensionalen schaltungsträger
US8242878B2 (en) * 2008-09-05 2012-08-14 Vishay Dale Electronics, Inc. Resistor and method for making same
US9142533B2 (en) * 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same

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US4741077A (en) * 1987-05-15 1988-05-03 Sfe Technologies End terminations for capacitors

Also Published As

Publication number Publication date
DE3906018A1 (de) 1989-12-28
GB2220108B (en) 1992-12-09
GB8902168D0 (en) 1989-03-22
IT8920087A0 (it) 1989-04-10
ES2010414A6 (es) 1989-11-01
CH678378A5 (ko) 1991-08-30
JPH01321612A (ja) 1989-12-27
SE8900611D0 (sv) 1989-02-22
NL8900367A (nl) 1990-01-16
BR8901600A (pt) 1990-04-10
SE8900611L (sv) 1989-12-23
FR2633453A1 (fr) 1989-12-29
US4830723A (en) 1989-05-16
FR2633453B1 (fr) 1992-11-06
GB2220108A (en) 1989-12-28
SE467811B (sv) 1992-09-14
IT1229172B (it) 1991-07-22

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