SE8300040D0 - Cultivation of monocrystalline silicon - Google Patents
Cultivation of monocrystalline siliconInfo
- Publication number
- SE8300040D0 SE8300040D0 SE8300040A SE8300040A SE8300040D0 SE 8300040 D0 SE8300040 D0 SE 8300040D0 SE 8300040 A SE8300040 A SE 8300040A SE 8300040 A SE8300040 A SE 8300040A SE 8300040 D0 SE8300040 D0 SE 8300040D0
- Authority
- SE
- Sweden
- Prior art keywords
- monocrystalline silicon
- cultivation
- grown
- depositing
- substrate
- Prior art date
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
An apertured masking layer (14) is disposed on the surface (12) of a substrate (10), and an epitaxial layer (20) is then grown by a depositing/etching cycle. By performing the depositing/ etching cycle a predetermined number of times, monocrystalline silicon (20) will he grown from the surface (18) of the substrate (10), through the aperture (16) in the mask (14), and over the masking layer (14). The etching removes any polycrystalline deposits. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33895882A | 1982-01-12 | 1982-01-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
SE8300040D0 true SE8300040D0 (en) | 1983-01-04 |
SE8300040L SE8300040L (en) | 1983-07-13 |
SE462756B SE462756B (en) | 1990-08-27 |
Family
ID=23326867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8300040A SE462756B (en) | 1982-01-12 | 1983-01-04 | PROCEDURE FOR PREPARING MONOCRISTALLINE SILICONE OVER A MASKING LAYER |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS58120595A (en) |
DE (1) | DE3300716A1 (en) |
FR (1) | FR2522695B1 (en) |
GB (1) | GB2113465B (en) |
IN (1) | IN157312B (en) |
IT (1) | IT1173651B (en) |
SE (1) | SE462756B (en) |
YU (1) | YU6083A (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6214424A (en) * | 1985-07-11 | 1987-01-23 | Fujitsu Ltd | Manufacture of semiconductor device |
JP2505754B2 (en) * | 1986-07-11 | 1996-06-12 | キヤノン株式会社 | Method for manufacturing photoelectric conversion device |
US4829016A (en) * | 1987-10-19 | 1989-05-09 | Purdue Research Foundation | Bipolar transistor by selective and lateral epitaxial overgrowth |
US5403771A (en) * | 1990-12-26 | 1995-04-04 | Canon Kabushiki Kaisha | Process for producing a solar cell by means of epitaxial growth process |
JP3272532B2 (en) * | 1993-12-27 | 2002-04-08 | 富士通株式会社 | Method for manufacturing semiconductor device |
JP4832022B2 (en) * | 2005-07-29 | 2011-12-07 | 株式会社日立国際電気 | Substrate processing equipment |
JP2010141079A (en) * | 2008-12-11 | 2010-06-24 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device |
JP2010147142A (en) * | 2008-12-17 | 2010-07-01 | Hitachi Kokusai Electric Inc | Method for manufacturing semiconductor, and apparatus |
US20110272011A1 (en) * | 2009-06-05 | 2011-11-10 | Amberwave, Inc. | Solar Cell |
JP2012054364A (en) * | 2010-08-31 | 2012-03-15 | Nobuyuki Akiyama | Manufacturing method of silicon thin film, manufacturing method of silicon thin film solar cell, silicon thin film, silicon thin film solar cell |
CN115198352B (en) * | 2022-08-24 | 2024-03-26 | 西安奕斯伟材料科技股份有限公司 | Epitaxial growth method and epitaxial wafer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL131048C (en) * | 1960-01-15 | |||
US3746608A (en) * | 1963-05-14 | 1973-07-17 | Nitto Boseki Co Ltd | Shaped article of synthetic resin having mechanically disordered orientation |
DE2059116C3 (en) * | 1970-12-01 | 1974-11-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Method for manufacturing a semiconductor component |
US3945864A (en) * | 1974-05-28 | 1976-03-23 | Rca Corporation | Method of growing thick expitaxial layers of silicon |
DE3008058A1 (en) * | 1980-03-03 | 1981-09-17 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithic integrated circuit mfr. - by partial etching and refilling of conductor zones through mask |
-
1982
- 1982-09-10 IN IN1046/CAL/82A patent/IN157312B/en unknown
- 1982-12-30 GB GB08236936A patent/GB2113465B/en not_active Expired
- 1982-12-31 FR FR8222189A patent/FR2522695B1/en not_active Expired
-
1983
- 1983-01-04 SE SE8300040A patent/SE462756B/en not_active IP Right Cessation
- 1983-01-05 JP JP58000398A patent/JPS58120595A/en active Granted
- 1983-01-10 IT IT19043/83A patent/IT1173651B/en active
- 1983-01-11 DE DE19833300716 patent/DE3300716A1/en active Granted
- 1983-01-12 YU YU00060/83A patent/YU6083A/en unknown
Also Published As
Publication number | Publication date |
---|---|
DE3300716A1 (en) | 1983-07-21 |
IN157312B (en) | 1986-03-01 |
SE462756B (en) | 1990-08-27 |
YU6083A (en) | 1985-10-31 |
JPH0435439B2 (en) | 1992-06-11 |
GB2113465A (en) | 1983-08-03 |
FR2522695B1 (en) | 1987-02-27 |
JPS58120595A (en) | 1983-07-18 |
DE3300716C2 (en) | 1993-01-21 |
SE8300040L (en) | 1983-07-13 |
GB2113465B (en) | 1986-08-06 |
IT1173651B (en) | 1987-06-24 |
IT8319043A0 (en) | 1983-01-10 |
FR2522695A1 (en) | 1983-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54161268A (en) | Method of manufacturing semiconductor device growing silicon layer on sapphire substrate | |
SE8301028L (en) | Cultivation of monocrystalline layers | |
SE8300040D0 (en) | Cultivation of monocrystalline silicon | |
JPS5378183A (en) | Manufacture of semiconductor device | |
JPS55156369A (en) | Manufacture of semiconductor device | |
JPS56108264A (en) | Manufacture of semiconductor device | |
JPS6424425A (en) | Formation of tapered pattern | |
JPS5533051A (en) | Manufacture of semiconductor device | |
JPS5434769A (en) | Photoetching method for silicon semiconductor wafer | |
JPS55123143A (en) | Manufacture of semiconductor device | |
JPS5558534A (en) | Manufacture of semiconductor device | |
JPS57133645A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS5360177A (en) | Photo mask | |
JPS5497370A (en) | Manufacture of semiconductor device | |
JPS5375871A (en) | Procuction of semiconductor device | |
JPS5353280A (en) | Manufacture for semiconductor device | |
JPS57201015A (en) | Manufacture of semiconductor device | |
JPS5378777A (en) | Semiconductor device | |
JPS54116882A (en) | Manufacture of semiconductor device | |
JPS5599720A (en) | Method and device of manufacturing semiconductor device | |
JPS53144687A (en) | Production of semiconductor device | |
JPS5427372A (en) | Manufacture of semiconductor device | |
JPS5497369A (en) | Manufacture of semiconductor device | |
JPS5261973A (en) | Production of semiconductor device | |
JPS5637642A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAL | Patent in force |
Ref document number: 8300040-6 Format of ref document f/p: F |
|
NUG | Patent has lapsed |
Ref document number: 8300040-6 Format of ref document f/p: F |