SE8300040L - Cultivation of monocrystalline silicon - Google Patents

Cultivation of monocrystalline silicon

Info

Publication number
SE8300040L
SE8300040L SE8300040A SE8300040A SE8300040L SE 8300040 L SE8300040 L SE 8300040L SE 8300040 A SE8300040 A SE 8300040A SE 8300040 A SE8300040 A SE 8300040A SE 8300040 L SE8300040 L SE 8300040L
Authority
SE
Sweden
Prior art keywords
monocrystalline silicon
cultivation
grown
depositing
substrate
Prior art date
Application number
SE8300040A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE462756B (en
SE8300040D0 (en
Inventor
Jr J F Corboy
L L Jastrzebski
S C Blackstone
Jr R H Pagliaro
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23326867&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SE8300040(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8300040D0 publication Critical patent/SE8300040D0/en
Publication of SE8300040L publication Critical patent/SE8300040L/en
Publication of SE462756B publication Critical patent/SE462756B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

An apertured masking layer (14) is disposed on the surface (12) of a substrate (10), and an epitaxial layer (20) is then grown by a depositing/etching cycle. By performing the depositing/ etching cycle a predetermined number of times, monocrystalline silicon (20) will he grown from the surface (18) of the substrate (10), through the aperture (16) in the mask (14), and over the masking layer (14). The etching removes any polycrystalline deposits. <IMAGE>
SE8300040A 1982-01-12 1983-01-04 PROCEDURE FOR PREPARING MONOCRISTALLINE SILICONE OVER A MASKING LAYER SE462756B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33895882A 1982-01-12 1982-01-12

Publications (3)

Publication Number Publication Date
SE8300040D0 SE8300040D0 (en) 1983-01-04
SE8300040L true SE8300040L (en) 1983-07-13
SE462756B SE462756B (en) 1990-08-27

Family

ID=23326867

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8300040A SE462756B (en) 1982-01-12 1983-01-04 PROCEDURE FOR PREPARING MONOCRISTALLINE SILICONE OVER A MASKING LAYER

Country Status (8)

Country Link
JP (1) JPS58120595A (en)
DE (1) DE3300716A1 (en)
FR (1) FR2522695B1 (en)
GB (1) GB2113465B (en)
IN (1) IN157312B (en)
IT (1) IT1173651B (en)
SE (1) SE462756B (en)
YU (1) YU6083A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214424A (en) * 1985-07-11 1987-01-23 Fujitsu Ltd Manufacture of semiconductor device
JP2505754B2 (en) * 1986-07-11 1996-06-12 キヤノン株式会社 Method for manufacturing photoelectric conversion device
US4829016A (en) * 1987-10-19 1989-05-09 Purdue Research Foundation Bipolar transistor by selective and lateral epitaxial overgrowth
US5403771A (en) * 1990-12-26 1995-04-04 Canon Kabushiki Kaisha Process for producing a solar cell by means of epitaxial growth process
JP3272532B2 (en) * 1993-12-27 2002-04-08 富士通株式会社 Method for manufacturing semiconductor device
JP4832022B2 (en) * 2005-07-29 2011-12-07 株式会社日立国際電気 Substrate processing equipment
JP2010141079A (en) * 2008-12-11 2010-06-24 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device
JP2010147142A (en) * 2008-12-17 2010-07-01 Hitachi Kokusai Electric Inc Method for manufacturing semiconductor, and apparatus
US20110272011A1 (en) * 2009-06-05 2011-11-10 Amberwave, Inc. Solar Cell
JP2012054364A (en) * 2010-08-31 2012-03-15 Nobuyuki Akiyama Manufacturing method of silicon thin film, manufacturing method of silicon thin film solar cell, silicon thin film, silicon thin film solar cell
CN115198352B (en) * 2022-08-24 2024-03-26 西安奕斯伟材料科技股份有限公司 Epitaxial growth method and epitaxial wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL271203A (en) * 1960-01-15
US3746608A (en) * 1963-05-14 1973-07-17 Nitto Boseki Co Ltd Shaped article of synthetic resin having mechanically disordered orientation
DE2059116C3 (en) * 1970-12-01 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for manufacturing a semiconductor component
US3945864A (en) * 1974-05-28 1976-03-23 Rca Corporation Method of growing thick expitaxial layers of silicon
DE3008058A1 (en) * 1980-03-03 1981-09-17 Robert Bosch Gmbh, 7000 Stuttgart Monolithic integrated circuit mfr. - by partial etching and refilling of conductor zones through mask

Also Published As

Publication number Publication date
IN157312B (en) 1986-03-01
DE3300716C2 (en) 1993-01-21
GB2113465B (en) 1986-08-06
DE3300716A1 (en) 1983-07-21
IT8319043A0 (en) 1983-01-10
JPS58120595A (en) 1983-07-18
IT1173651B (en) 1987-06-24
SE462756B (en) 1990-08-27
YU6083A (en) 1985-10-31
FR2522695B1 (en) 1987-02-27
FR2522695A1 (en) 1983-09-09
JPH0435439B2 (en) 1992-06-11
GB2113465A (en) 1983-08-03
SE8300040D0 (en) 1983-01-04

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