JPS57133645A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS57133645A
JPS57133645A JP1946281A JP1946281A JPS57133645A JP S57133645 A JPS57133645 A JP S57133645A JP 1946281 A JP1946281 A JP 1946281A JP 1946281 A JP1946281 A JP 1946281A JP S57133645 A JPS57133645 A JP S57133645A
Authority
JP
Japan
Prior art keywords
film
layer
groove
coated
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1946281A
Other languages
Japanese (ja)
Other versions
JPH0217937B2 (en
Inventor
Toshihiko Fukuyama
Yoshinobu Monma
Ryoji Abe
Akira Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1946281A priority Critical patent/JPS57133645A/en
Publication of JPS57133645A publication Critical patent/JPS57133645A/en
Publication of JPH0217937B2 publication Critical patent/JPH0217937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Abstract

PURPOSE:To obtain an isolation layer free from bird's beaks and the like by a method wherein, when an IC device is insulation-isolated using a delivative, a V-shape isolation groove surrounding an active region is provided, an SiO2 film, an Si3N4 film and a polycrystalline layer are provided on the side face of the groove, and through the intermediaries of these film and layer, a PSG film is filled in the isolation groove. CONSTITUTION:An N<+> type buried layer 20 is formed on a P type Si substrate 11, an N type layer 12 is epitaxially grown on the whole surface including the layer 20, and an SiO2 film 21 and an Si3N4 film 22 are laminated and coated on the whole surface. Then, a photoresist pattern 23 is coated on the active region 19 located on the layer 20, a V-shape isolation groove 13, which is penetrating the layer 12 and entering into the substrate 11, is formed by performing etching. Subsequently, the pattern 23 is removed, SiO2 film 14 which will be connected to the film 21 is coated along the side face of the groove 13, the groove 13 is filled up by growing a polycrystalline Si layer 15 on the whole surface including the film 14, and a PSG film 16 is coated on the layer 15. Then, the film 16 is fused by performing heat treatment, the film 16 is left over on the groove 13 alone, and a polycrystalline Si layer 25 is deposited contacting the film 16.
JP1946281A 1981-02-12 1981-02-12 Semiconductor integrated circuit device and manufacture thereof Granted JPS57133645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1946281A JPS57133645A (en) 1981-02-12 1981-02-12 Semiconductor integrated circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1946281A JPS57133645A (en) 1981-02-12 1981-02-12 Semiconductor integrated circuit device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57133645A true JPS57133645A (en) 1982-08-18
JPH0217937B2 JPH0217937B2 (en) 1990-04-24

Family

ID=11999986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1946281A Granted JPS57133645A (en) 1981-02-12 1981-02-12 Semiconductor integrated circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57133645A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156552A (en) * 1988-12-08 1990-06-15 Nec Corp Semiconductor device and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4869485A (en) * 1971-12-22 1973-09-20
JPS5379473A (en) * 1976-12-24 1978-07-13 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4869485A (en) * 1971-12-22 1973-09-20
JPS5379473A (en) * 1976-12-24 1978-07-13 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156552A (en) * 1988-12-08 1990-06-15 Nec Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPH0217937B2 (en) 1990-04-24

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