SE8000392L - Minnesanordning - Google Patents
MinnesanordningInfo
- Publication number
- SE8000392L SE8000392L SE8000392A SE8000392A SE8000392L SE 8000392 L SE8000392 L SE 8000392L SE 8000392 A SE8000392 A SE 8000392A SE 8000392 A SE8000392 A SE 8000392A SE 8000392 L SE8000392 L SE 8000392L
- Authority
- SE
- Sweden
- Prior art keywords
- cell
- nonvolatile
- ram cell
- nonvolatile memory
- ram
- Prior art date
Links
- 230000003068 static effect Effects 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/006,029 US4300212A (en) | 1979-01-24 | 1979-01-24 | Nonvolatile static random access memory devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE8000392L true SE8000392L (sv) | 1980-07-25 |
Family
ID=21718940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8000392A SE8000392L (sv) | 1979-01-24 | 1980-01-17 | Minnesanordning |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS55101192A (enrdf_load_stackoverflow) |
| KR (1) | KR830001767B1 (enrdf_load_stackoverflow) |
| BE (1) | BE881329A (enrdf_load_stackoverflow) |
| DE (1) | DE3002492A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2447587B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2042296B (enrdf_load_stackoverflow) |
| NL (1) | NL192015C (enrdf_load_stackoverflow) |
| SE (1) | SE8000392L (enrdf_load_stackoverflow) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
| WO1980001965A1 (en) * | 1979-03-13 | 1980-09-18 | Ncr Co | Static volatile/non-volatile ram system |
| JPS57199265A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| JPS57199264A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
| JPS5792865A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor memory device |
| JPS5792490A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
| GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
| US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
| JPS60185297A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
| JPH0638502B2 (ja) * | 1984-06-13 | 1994-05-18 | セイコー電子工業株式会社 | 不揮発性ｒａｍ |
| US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
| JPS61225860A (ja) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | 半導体記憶装置 |
| JPH07120716B2 (ja) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | 半導体記憶装置 |
| JPH01214993A (ja) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | データ記憶装置 |
| DE10211337B4 (de) * | 2002-03-14 | 2009-12-31 | Infineon Technologies Ag | Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070655A (en) * | 1976-11-05 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Virtually nonvolatile static random access memory device |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
-
1980
- 1980-01-16 GB GB8001429A patent/GB2042296B/en not_active Expired
- 1980-01-17 SE SE8000392A patent/SE8000392L/ not_active Application Discontinuation
- 1980-01-23 FR FR8001399A patent/FR2447587B1/fr not_active Expired
- 1980-01-23 NL NL8000435A patent/NL192015C/xx not_active IP Right Cessation
- 1980-01-24 JP JP738980A patent/JPS55101192A/ja active Granted
- 1980-01-24 BE BE0/199093A patent/BE881329A/fr not_active IP Right Cessation
- 1980-01-24 DE DE19803002492 patent/DE3002492A1/de active Granted
- 1980-01-24 KR KR1019800000256A patent/KR830001767B1/ko not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2447587A1 (fr) | 1980-08-22 |
| FR2447587B1 (fr) | 1986-02-28 |
| JPH0115959B2 (enrdf_load_stackoverflow) | 1989-03-22 |
| BE881329A (fr) | 1980-05-16 |
| GB2042296B (en) | 1983-05-11 |
| NL192015B (nl) | 1996-08-01 |
| NL8000435A (nl) | 1980-07-28 |
| KR830001767B1 (ko) | 1983-09-03 |
| DE3002492C2 (enrdf_load_stackoverflow) | 1990-12-20 |
| NL192015C (nl) | 1996-12-03 |
| GB2042296A (en) | 1980-09-17 |
| JPS55101192A (en) | 1980-08-01 |
| DE3002492A1 (de) | 1980-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
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