SE519382C2 - Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana - Google Patents

Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana

Info

Publication number
SE519382C2
SE519382C2 SE0004027A SE0004027A SE519382C2 SE 519382 C2 SE519382 C2 SE 519382C2 SE 0004027 A SE0004027 A SE 0004027A SE 0004027 A SE0004027 A SE 0004027A SE 519382 C2 SE519382 C2 SE 519382C2
Authority
SE
Sweden
Prior art keywords
voltage transistor
high voltage
nmos
region
pmos
Prior art date
Application number
SE0004027A
Other languages
English (en)
Swedish (sv)
Other versions
SE0004027D0 (sv
SE0004027L (sv
Inventor
Anders Soederbaerg
Peter Olofsson
Andrej Litwin
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0004027A priority Critical patent/SE519382C2/sv
Publication of SE0004027D0 publication Critical patent/SE0004027D0/xx
Priority to TW089124467A priority patent/TW486751B/zh
Priority to CN01818221.6A priority patent/CN1228816C/zh
Priority to PCT/SE2001/002405 priority patent/WO2002037547A1/en
Priority to EP01979204A priority patent/EP1330837A1/en
Priority to AU2002211190A priority patent/AU2002211190A1/en
Priority to US09/985,447 priority patent/US6686233B2/en
Publication of SE0004027L publication Critical patent/SE0004027L/xx
Publication of SE519382C2 publication Critical patent/SE519382C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE0004027A 2000-11-03 2000-11-03 Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana SE519382C2 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE0004027A SE519382C2 (sv) 2000-11-03 2000-11-03 Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana
TW089124467A TW486751B (en) 2000-11-03 2000-11-18 Integration of high voltage self-aligned MOS components
CN01818221.6A CN1228816C (zh) 2000-11-03 2001-11-01 高电压自定位mos元件的集成
PCT/SE2001/002405 WO2002037547A1 (en) 2000-11-03 2001-11-01 Integration of high voltage self-aligned mos components
EP01979204A EP1330837A1 (en) 2000-11-03 2001-11-01 Integration of high voltage self-aligned mos components
AU2002211190A AU2002211190A1 (en) 2000-11-03 2001-11-01 Integration of high voltage self-aligned mos components
US09/985,447 US6686233B2 (en) 2000-11-03 2001-11-02 Integration of high voltage self-aligned MOS components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0004027A SE519382C2 (sv) 2000-11-03 2000-11-03 Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana

Publications (3)

Publication Number Publication Date
SE0004027D0 SE0004027D0 (sv) 2000-11-03
SE0004027L SE0004027L (sv) 2002-05-04
SE519382C2 true SE519382C2 (sv) 2003-02-25

Family

ID=20281691

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0004027A SE519382C2 (sv) 2000-11-03 2000-11-03 Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana

Country Status (7)

Country Link
US (1) US6686233B2 (zh)
EP (1) EP1330837A1 (zh)
CN (1) CN1228816C (zh)
AU (1) AU2002211190A1 (zh)
SE (1) SE519382C2 (zh)
TW (1) TW486751B (zh)
WO (1) WO2002037547A1 (zh)

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SE0302594D0 (sv) * 2003-09-30 2003-09-30 Infineon Technologies Ag Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
SE0303099D0 (sv) * 2003-11-21 2003-11-21 Infineon Technologies Ag Method in the fabrication of a monolithically integrated high frequency circuit
SE0303106D0 (sv) * 2003-11-21 2003-11-21 Infineon Technologies Ag Ldmos transistor device, integrated circuit, and fabrication method thereof
KR100670401B1 (ko) * 2003-12-27 2007-01-16 동부일렉트로닉스 주식회사 반도체 소자의 게이트 산화막 형성 방법
DE102004009521B4 (de) * 2004-02-27 2020-06-10 Austriamicrosystems Ag Hochvolt-PMOS-Transistor, Maske zur Herstellung einer Wanne und Verfahren zur Herstellung eines Hochvolt-PMOS-Transistors
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US7329618B2 (en) * 2005-06-28 2008-02-12 Micron Technology, Inc. Ion implanting methods
EP1804285B1 (en) * 2005-12-27 2018-10-24 Semiconductor Components Industries, LLC Method for manufacturing a transistor with self-aligned channel
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US7465623B2 (en) * 2006-08-28 2008-12-16 Advanced Micro Devices, Inc. Methods for fabricating a semiconductor device on an SOI substrate
KR100865548B1 (ko) * 2006-12-28 2008-10-28 주식회사 하이닉스반도체 반도체 메모리장치의 제조방법
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US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
CN101752254B (zh) * 2008-12-22 2012-12-19 中芯国际集成电路制造(上海)有限公司 形成离子注入区的方法、mos晶体管及其制造方法
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CN101789432B (zh) * 2010-01-27 2011-11-16 崇贸科技股份有限公司 高压侧半导体结构
US9209098B2 (en) * 2011-05-19 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. HVMOS reliability evaluation using bulk resistances as indices
CN102683186A (zh) * 2012-05-09 2012-09-19 上海宏力半导体制造有限公司 抑制热载流子注入的方法及BiCMOS器件制造方法
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Also Published As

Publication number Publication date
AU2002211190A1 (en) 2002-05-15
US20020055220A1 (en) 2002-05-09
SE0004027D0 (sv) 2000-11-03
SE0004027L (sv) 2002-05-04
TW486751B (en) 2002-05-11
US6686233B2 (en) 2004-02-03
EP1330837A1 (en) 2003-07-30
WO2002037547A1 (en) 2002-05-10
CN1228816C (zh) 2005-11-23
CN1471724A (zh) 2004-01-28

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