AU2002211190A1 - Integration of high voltage self-aligned mos components - Google Patents

Integration of high voltage self-aligned mos components

Info

Publication number
AU2002211190A1
AU2002211190A1 AU2002211190A AU1119002A AU2002211190A1 AU 2002211190 A1 AU2002211190 A1 AU 2002211190A1 AU 2002211190 A AU2002211190 A AU 2002211190A AU 1119002 A AU1119002 A AU 1119002A AU 2002211190 A1 AU2002211190 A1 AU 2002211190A1
Authority
AU
Australia
Prior art keywords
integration
high voltage
voltage self
mos components
aligned mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002211190A
Inventor
Andrej Litwin
Peter Olofsson
Anders Soderbarg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of AU2002211190A1 publication Critical patent/AU2002211190A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AU2002211190A 2000-11-03 2001-11-01 Integration of high voltage self-aligned mos components Abandoned AU2002211190A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0004027 2000-11-03
SE0004027A SE519382C2 (en) 2000-11-03 2000-11-03 Integration of self-oriented MOS high voltage components and semiconductor structure including such
PCT/SE2001/002405 WO2002037547A1 (en) 2000-11-03 2001-11-01 Integration of high voltage self-aligned mos components

Publications (1)

Publication Number Publication Date
AU2002211190A1 true AU2002211190A1 (en) 2002-05-15

Family

ID=20281691

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002211190A Abandoned AU2002211190A1 (en) 2000-11-03 2001-11-01 Integration of high voltage self-aligned mos components

Country Status (7)

Country Link
US (1) US6686233B2 (en)
EP (1) EP1330837A1 (en)
CN (1) CN1228816C (en)
AU (1) AU2002211190A1 (en)
SE (1) SE519382C2 (en)
TW (1) TW486751B (en)
WO (1) WO2002037547A1 (en)

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US6855985B2 (en) * 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
SE527082C2 (en) * 2003-08-27 2005-12-20 Infineon Technologies Ag Monolithic integrated power amplifier device
SE0302594D0 (en) * 2003-09-30 2003-09-30 Infineon Technologies Ag Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
SE0303106D0 (en) * 2003-11-21 2003-11-21 Infineon Technologies Ag Ldmos transistor device, integrated circuit, and fabrication method thereof
SE0303099D0 (en) * 2003-11-21 2003-11-21 Infineon Technologies Ag Method in the fabrication of a monolithically integrated high frequency circuit
KR100670401B1 (en) * 2003-12-27 2007-01-16 동부일렉트로닉스 주식회사 Method for fabricating the gate oxide layer in semiconductor device
DE102004009521B4 (en) * 2004-02-27 2020-06-10 Austriamicrosystems Ag High-voltage PMOS transistor, mask for manufacturing a tub and method for manufacturing a high-voltage PMOS transistor
KR100624912B1 (en) * 2005-03-22 2006-09-19 주식회사 하이닉스반도체 Method for fabricating flash memory device
US7329618B2 (en) * 2005-06-28 2008-02-12 Micron Technology, Inc. Ion implanting methods
EP1804285B1 (en) * 2005-12-27 2018-10-24 Semiconductor Components Industries, LLC Method for manufacturing a transistor with self-aligned channel
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US7465623B2 (en) * 2006-08-28 2008-12-16 Advanced Micro Devices, Inc. Methods for fabricating a semiconductor device on an SOI substrate
KR100865548B1 (en) * 2006-12-28 2008-10-28 주식회사 하이닉스반도체 Method for fabricating semiconductor device
US7781843B1 (en) * 2007-01-11 2010-08-24 Hewlett-Packard Development Company, L.P. Integrating high-voltage CMOS devices with low-voltage CMOS
KR100836766B1 (en) * 2007-01-22 2008-06-10 삼성전자주식회사 Method of manufacturing high voltage semiconductor device and the high voltage semiconductor device using the same
KR100917813B1 (en) 2007-10-05 2009-09-18 주식회사 동부하이텍 Semiconductor device and manufacturing method thereof
KR100903483B1 (en) 2007-11-26 2009-06-18 주식회사 동부하이텍 Method for manufacturing semiconductor device
JP5283916B2 (en) * 2008-02-01 2013-09-04 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Manufacturing method of semiconductor device
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
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US9209098B2 (en) 2011-05-19 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. HVMOS reliability evaluation using bulk resistances as indices
CN102683186A (en) * 2012-05-09 2012-09-19 上海宏力半导体制造有限公司 Method for inhibiting hot carrier injection and manufacture method of BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) device
US20140167142A1 (en) 2012-12-14 2014-06-19 Spansion Llc Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory Cells
DE102015004235B4 (en) 2014-04-14 2019-01-03 Elmos Semiconductor Ag Method of protecting a CMOS circuit on an N-substrate from reverse polarity
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US9412736B2 (en) 2014-06-05 2016-08-09 Globalfoundries Inc. Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias
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Also Published As

Publication number Publication date
US6686233B2 (en) 2004-02-03
SE519382C2 (en) 2003-02-25
EP1330837A1 (en) 2003-07-30
SE0004027D0 (en) 2000-11-03
WO2002037547A1 (en) 2002-05-10
CN1228816C (en) 2005-11-23
SE0004027L (en) 2002-05-04
CN1471724A (en) 2004-01-28
US20020055220A1 (en) 2002-05-09
TW486751B (en) 2002-05-11

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