SE516914C2 - Metoder och rastrerare för högpresterande mönstergenerering - Google Patents
Metoder och rastrerare för högpresterande mönstergenereringInfo
- Publication number
- SE516914C2 SE516914C2 SE9903243A SE9903243A SE516914C2 SE 516914 C2 SE516914 C2 SE 516914C2 SE 9903243 A SE9903243 A SE 9903243A SE 9903243 A SE9903243 A SE 9903243A SE 516914 C2 SE516914 C2 SE 516914C2
- Authority
- SE
- Sweden
- Prior art keywords
- data
- fracturing
- slm
- rasterization
- bitmap
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S707/00—Data processing: database and file management or data structures
- Y10S707/99931—Database or file accessing
- Y10S707/99937—Sorting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S707/00—Data processing: database and file management or data structures
- Y10S707/99941—Database schema or data structure
- Y10S707/99942—Manipulating data structure, e.g. compression, compaction, compilation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Image Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9903243A SE516914C2 (sv) | 1999-09-09 | 1999-09-09 | Metoder och rastrerare för högpresterande mönstergenerering |
US10/049,286 US6717097B1 (en) | 1999-09-09 | 2000-09-08 | Data path for high performance pattern generator |
KR1020027003117A KR100748767B1 (ko) | 1999-09-09 | 2000-09-08 | 고성능 패턴 발생기를 위한 데이터 경로 |
AU75664/00A AU7566400A (en) | 1999-09-09 | 2000-09-08 | Data path for high performance pattern generator |
PCT/SE2000/001749 WO2001018606A1 (en) | 1999-09-09 | 2000-09-08 | Data path for high performance pattern generator |
CNB008125694A CN1203376C (zh) | 1999-09-09 | 2000-09-08 | 一种图形数据转换方法及装置 |
JP2001522140A JP2003508825A (ja) | 1999-09-09 | 2000-09-08 | 高性能パターン発生器のためのデータパス |
DE10085017T DE10085017B4 (de) | 1999-09-09 | 2000-09-08 | Datenpfad für Hochleistungs-Mustergenerator |
US10/782,863 US7590966B2 (en) | 1999-09-09 | 2004-02-23 | Data path for high performance pattern generator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9903243A SE516914C2 (sv) | 1999-09-09 | 1999-09-09 | Metoder och rastrerare för högpresterande mönstergenerering |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9903243D0 SE9903243D0 (sv) | 1999-09-09 |
SE9903243L SE9903243L (sv) | 2001-03-10 |
SE516914C2 true SE516914C2 (sv) | 2002-03-19 |
Family
ID=20416954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9903243A SE516914C2 (sv) | 1999-09-09 | 1999-09-09 | Metoder och rastrerare för högpresterande mönstergenerering |
Country Status (8)
Country | Link |
---|---|
US (2) | US6717097B1 (ko) |
JP (1) | JP2003508825A (ko) |
KR (1) | KR100748767B1 (ko) |
CN (1) | CN1203376C (ko) |
AU (1) | AU7566400A (ko) |
DE (1) | DE10085017B4 (ko) |
SE (1) | SE516914C2 (ko) |
WO (1) | WO2001018606A1 (ko) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE9800665D0 (sv) * | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
JP4273291B2 (ja) * | 2001-08-17 | 2009-06-03 | 株式会社オーク製作所 | 多重露光描画装置および多重露光描画方法 |
JP4324645B2 (ja) * | 2001-08-21 | 2009-09-02 | 株式会社オーク製作所 | 多重露光描画装置および多重露光描画方法 |
US6950194B2 (en) * | 2001-12-07 | 2005-09-27 | Micronic Laser Systems Ab | Alignment sensor |
US7106490B2 (en) * | 2001-12-14 | 2006-09-12 | Micronic Laser Systems Ab | Methods and systems for improved boundary contrast |
SE0200547D0 (sv) | 2002-02-25 | 2002-02-25 | Micronic Laser Systems Ab | An image forming method and apparatus |
SE0200864D0 (sv) * | 2002-03-21 | 2002-03-21 | Micronic Laser Systems Ab | Method and apparatus for printing large data flows |
DE10242142A1 (de) * | 2002-09-03 | 2004-03-25 | Kleo Halbleitertechnik Gmbh & Co Kg | Verfahren und Vorrichtung zum Herstellen von belichteten Strukturen |
US7365743B1 (en) | 2002-10-08 | 2008-04-29 | Adobe Systems Incorporated | Assignments for parallel rasterization |
EP2302460A3 (en) | 2002-10-25 | 2011-04-06 | Mapper Lithography Ip B.V. | Lithography system |
SE0300516D0 (sv) * | 2003-02-28 | 2003-02-28 | Micronic Laser Systems Ab | SLM direct writer |
CA2526467C (en) * | 2003-05-20 | 2015-03-03 | Kagutech Ltd. | Digital backplane recursive feedback control |
EP1631853A1 (en) | 2003-06-12 | 2006-03-08 | Micronic Laser Systems Ab | Method for high precision printing of patterns |
US6833854B1 (en) | 2003-06-12 | 2004-12-21 | Micronic Laser Systems Ab | Method for high precision printing of patterns |
US7186486B2 (en) | 2003-08-04 | 2007-03-06 | Micronic Laser Systems Ab | Method to pattern a substrate |
US7410736B2 (en) * | 2003-09-30 | 2008-08-12 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones |
US6876440B1 (en) * | 2003-09-30 | 2005-04-05 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap of exposure zones with attenuation of the aerial image in the overlap region |
US7023526B2 (en) * | 2003-09-30 | 2006-04-04 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap without an explicit attenuation |
US7842926B2 (en) * | 2003-11-12 | 2010-11-30 | Micronic Laser Systems Ab | Method and device for correcting SLM stamp image imperfections |
WO2005065066A2 (en) * | 2004-01-08 | 2005-07-21 | Micronic Laser Systems Ab | Method and device for data integrity checking in a spatial light modulator |
EP1719018A1 (en) * | 2004-02-25 | 2006-11-08 | Micronic Laser Systems Ab | Methods for exposing patterns and emulating masks in optical maskless lithography |
JP2005300812A (ja) * | 2004-04-09 | 2005-10-27 | Pentax Corp | 描画装置 |
JP2005300807A (ja) * | 2004-04-09 | 2005-10-27 | Pentax Corp | 描画装置 |
US7242456B2 (en) * | 2004-05-26 | 2007-07-10 | Asml Holdings N.V. | System and method utilizing a lithography tool having modular illumination, pattern generator, and projection optics portions |
JP4068081B2 (ja) * | 2004-05-26 | 2008-03-26 | 株式会社日立ハイテクノロジーズ | 荷電粒子線描画装置 |
JP4601482B2 (ja) * | 2004-07-29 | 2010-12-22 | 新光電気工業株式会社 | 描画装置および描画方法 |
WO2006021406A2 (en) * | 2004-08-23 | 2006-03-02 | Micronic Laser Systems Ab | Pupil improvement of incoherent imaging systems for enhanced cd linearity |
US7278129B2 (en) * | 2004-09-09 | 2007-10-02 | Micronic Laser Systems Ab | Healing algorithm |
JP2006113412A (ja) * | 2004-10-15 | 2006-04-27 | Fuji Photo Film Co Ltd | 描画方法および描画装置 |
JP2006113413A (ja) * | 2004-10-15 | 2006-04-27 | Fuji Photo Film Co Ltd | 描画方法および描画装置 |
US7457547B2 (en) * | 2004-11-08 | 2008-11-25 | Optium Australia Pty Limited | Optical calibration system and method |
JP5007232B2 (ja) * | 2004-11-15 | 2012-08-22 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | ターゲット材料のレーザ処理においてレーザ処理済み標本の生産を増大させる方法及びこれに用いるシステム |
US7349068B2 (en) * | 2004-12-17 | 2008-03-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7403865B2 (en) * | 2004-12-28 | 2008-07-22 | Asml Netherlands B.V. | System and method for fault indication on a substrate in maskless applications |
US7477772B2 (en) * | 2005-05-31 | 2009-01-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilizing 2D run length encoding for image data compression |
WO2007001298A1 (en) * | 2005-06-28 | 2007-01-04 | Thomson Licensing | Selective edge blending based on displayed content |
US7965373B2 (en) * | 2005-06-28 | 2011-06-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilizing a datapath having a balanced calculation load |
WO2007035166A2 (en) * | 2005-09-26 | 2007-03-29 | Micronic Laser Systems Ab | Methods and systems for pattern generation based on multiple forms of design data |
US7303440B2 (en) * | 2005-10-03 | 2007-12-04 | Stull Michael F | Universal battery charger/power source adapter |
US7528932B2 (en) | 2005-12-21 | 2009-05-05 | Micronic Laser Systems Ab | SLM direct writer |
DE102006008080A1 (de) | 2006-02-22 | 2007-08-30 | Kleo Maschinenbau Ag | Belichtungsanlage |
CN100456137C (zh) * | 2006-06-02 | 2009-01-28 | 上海微电子装备有限公司 | 光刻机同步时序控制串行数据通讯方法和系统及应用 |
US8749463B2 (en) | 2007-01-19 | 2014-06-10 | Hamamatsu Photonics K.K. | Phase-modulating apparatus |
KR101446820B1 (ko) | 2007-02-06 | 2014-10-01 | 칼 짜이스 에스엠테 게엠베하 | 마이크로리소그래피 투영 노광 장치의 조명 시스템 내의 다수의 미러 어레이들을 감시하는 방법 및 장치 |
US7890814B2 (en) * | 2007-06-27 | 2011-02-15 | Microsoft Corporation | Software error report analysis |
US20090199152A1 (en) * | 2008-02-06 | 2009-08-06 | Micronic Laser Systems Ab | Methods and apparatuses for reducing mura effects in generated patterns |
CN102084280B (zh) * | 2008-04-24 | 2015-07-15 | 麦克罗尼克迈达塔有限责任公司 | 具有结构化反射镜表面的空间光调制器 |
NL1036861A1 (nl) * | 2008-07-25 | 2009-10-27 | Asml Netherlands Bv | Measurement apparatus and method. |
US8893061B2 (en) * | 2009-01-30 | 2014-11-18 | Synopsys, Inc. | Incremental concurrent processing for efficient computation of high-volume layout data |
US8065638B2 (en) * | 2009-01-30 | 2011-11-22 | Synopsys, Inc. | Incremental concurrent processing for efficient computation of high-volume layout data |
US8539395B2 (en) | 2010-03-05 | 2013-09-17 | Micronic Laser Systems Ab | Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image |
US8507159B2 (en) | 2011-03-16 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electron beam data storage system and method for high volume manufacturing |
US8473877B2 (en) * | 2011-09-06 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Striping methodology for maskless lithography |
US8893059B2 (en) | 2012-02-06 | 2014-11-18 | Kla-Tencor Corporation | Pattern data system for high-performance maskless electron beam lithography |
US9224183B2 (en) | 2012-03-28 | 2015-12-29 | Intel Corporation | Projection of a plurality of structured light patterns |
US8609308B1 (en) * | 2012-05-31 | 2013-12-17 | Taiwan Semicondcutor Manufacturing Company, Ltd. | Smart subfield method for E-beam lithography |
US10714427B2 (en) | 2016-09-08 | 2020-07-14 | Asml Netherlands B.V. | Secure chips with serial numbers |
US10079206B2 (en) * | 2016-10-27 | 2018-09-18 | Mapper Lithography Ip B.V. | Fabricating unique chips using a charged particle multi-beamlet lithography system |
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KR100574208B1 (ko) * | 1998-06-02 | 2006-04-27 | 가부시키가이샤 니콘 | 주사형 노광장치 및 그의 제조방법, 및 디바이스 제조방법 |
US6040095A (en) * | 1998-09-30 | 2000-03-21 | Nikon Corporation | Measurement marks for e-beam projection mask and method of using |
US6496160B1 (en) * | 1999-04-29 | 2002-12-17 | Evans & Sutherland Computer Corporation | Stroke to raster converter system |
US6675169B1 (en) * | 1999-09-07 | 2004-01-06 | Microsoft Corporation | Method and system for attaching information to words of a trie |
JP4017935B2 (ja) * | 2002-07-30 | 2007-12-05 | 株式会社日立ハイテクノロジーズ | マルチビーム型電子線描画方法及び装置 |
US7469058B2 (en) * | 2005-01-28 | 2008-12-23 | Asml Holding N.V. | Method and system for a maskless lithography rasterization technique based on global optimization |
-
1999
- 1999-09-09 SE SE9903243A patent/SE516914C2/sv not_active IP Right Cessation
-
2000
- 2000-09-08 WO PCT/SE2000/001749 patent/WO2001018606A1/en active Application Filing
- 2000-09-08 DE DE10085017T patent/DE10085017B4/de not_active Expired - Lifetime
- 2000-09-08 AU AU75664/00A patent/AU7566400A/en not_active Abandoned
- 2000-09-08 KR KR1020027003117A patent/KR100748767B1/ko not_active IP Right Cessation
- 2000-09-08 JP JP2001522140A patent/JP2003508825A/ja active Pending
- 2000-09-08 US US10/049,286 patent/US6717097B1/en not_active Expired - Fee Related
- 2000-09-08 CN CNB008125694A patent/CN1203376C/zh not_active Expired - Fee Related
-
2004
- 2004-02-23 US US10/782,863 patent/US7590966B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20020072530A (ko) | 2002-09-16 |
US20040159636A1 (en) | 2004-08-19 |
CN1203376C (zh) | 2005-05-25 |
US6717097B1 (en) | 2004-04-06 |
WO2001018606A1 (en) | 2001-03-15 |
DE10085017T1 (de) | 2002-10-24 |
KR100748767B1 (ko) | 2007-08-13 |
DE10085017B4 (de) | 2011-08-11 |
CN1373862A (zh) | 2002-10-09 |
SE9903243D0 (sv) | 1999-09-09 |
SE9903243L (sv) | 2001-03-10 |
JP2003508825A (ja) | 2003-03-04 |
US7590966B2 (en) | 2009-09-15 |
AU7566400A (en) | 2001-04-10 |
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