SE512452C2 - Metod för att skriva data vid provning av minnesanordning och krets för provning av minnesanordning - Google Patents

Metod för att skriva data vid provning av minnesanordning och krets för provning av minnesanordning

Info

Publication number
SE512452C2
SE512452C2 SE9002030A SE9002030A SE512452C2 SE 512452 C2 SE512452 C2 SE 512452C2 SE 9002030 A SE9002030 A SE 9002030A SE 9002030 A SE9002030 A SE 9002030A SE 512452 C2 SE512452 C2 SE 512452C2
Authority
SE
Sweden
Prior art keywords
data
bit lines
pair
control circuit
transistors
Prior art date
Application number
SE9002030A
Other languages
English (en)
Swedish (sv)
Other versions
SE9002030L (sv
SE9002030D0 (sv
Inventor
Hoon Choi
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SE9002030D0 publication Critical patent/SE9002030D0/xx
Publication of SE9002030L publication Critical patent/SE9002030L/
Publication of SE512452C2 publication Critical patent/SE512452C2/sv

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4094Bit-line management or control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30Accessing single arrays
    • G11C29/34Accessing multiple bits simultaneously
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36Data generation devices, e.g. data inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
SE9002030A 1989-06-10 1990-06-06 Metod för att skriva data vid provning av minnesanordning och krets för provning av minnesanordning SE512452C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890008002A KR920001080B1 (ko) 1989-06-10 1989-06-10 메모리소자의 데이타 기록 방법 및 테스트 회로

Publications (3)

Publication Number Publication Date
SE9002030D0 SE9002030D0 (sv) 1990-06-06
SE9002030L SE9002030L (sv) 1990-12-11
SE512452C2 true SE512452C2 (sv) 2000-03-20

Family

ID=19286971

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9002030A SE512452C2 (sv) 1989-06-10 1990-06-06 Metod för att skriva data vid provning av minnesanordning och krets för provning av minnesanordning

Country Status (10)

Country Link
JP (1) JP3101953B2 (forum.php)
KR (1) KR920001080B1 (forum.php)
CN (1) CN1019243B (forum.php)
DE (1) DE4003132A1 (forum.php)
FR (1) FR2648266B1 (forum.php)
GB (1) GB2232496B (forum.php)
IT (1) IT1248750B (forum.php)
NL (1) NL194812C (forum.php)
RU (1) RU2084972C1 (forum.php)
SE (1) SE512452C2 (forum.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128899A (ja) * 1991-10-29 1993-05-25 Mitsubishi Electric Corp 半導体記憶装置
AU2003207364A1 (en) * 2002-02-26 2003-09-09 Koninklijke Philips Electronics N.V. Non-volatile memory test structure and method
CN107430881B (zh) * 2015-03-09 2021-03-23 东芝存储器株式会社 半导体存储装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59185097A (ja) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd 自己診断機能付メモリ装置
JPS62229599A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
DE3773773D1 (de) * 1986-06-25 1991-11-21 Nec Corp Pruefschaltung fuer eine speichereinrichtung mit willkuerlichem zugriff.
KR910001534B1 (ko) * 1986-09-08 1991-03-15 가부시키가이샤 도시바 반도체기억장치
JPS6446300A (en) * 1987-08-17 1989-02-20 Nippon Telegraph & Telephone Semiconductor memory
JPH01113999A (ja) * 1987-10-28 1989-05-02 Toshiba Corp 不揮発性メモリのストレステスト回路

Also Published As

Publication number Publication date
JPH0312100A (ja) 1991-01-21
GB2232496A (en) 1990-12-12
NL194812B (nl) 2002-11-01
SE9002030L (sv) 1990-12-11
IT1248750B (it) 1995-01-27
NL194812C (nl) 2003-03-04
KR920001080B1 (ko) 1992-02-01
GB9002396D0 (en) 1990-04-04
CN1048463A (zh) 1991-01-09
GB2232496B (en) 1993-06-02
IT9020566A1 (it) 1991-12-07
FR2648266A1 (fr) 1990-12-14
DE4003132A1 (de) 1990-12-20
FR2648266B1 (fr) 1993-12-24
JP3101953B2 (ja) 2000-10-23
RU2084972C1 (ru) 1997-07-20
SE9002030D0 (sv) 1990-06-06
IT9020566A0 (forum.php) 1990-06-07
CN1019243B (zh) 1992-11-25
KR910001779A (ko) 1991-01-31
DE4003132C2 (forum.php) 1992-06-04
NL9000261A (nl) 1991-01-02

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