SE0501717L - Anordning för förbättrad plasmaaktivitet i PVD-reaktioner - Google Patents

Anordning för förbättrad plasmaaktivitet i PVD-reaktioner

Info

Publication number
SE0501717L
SE0501717L SE0501717A SE0501717A SE0501717L SE 0501717 L SE0501717 L SE 0501717L SE 0501717 A SE0501717 A SE 0501717A SE 0501717 A SE0501717 A SE 0501717A SE 0501717 L SE0501717 L SE 0501717L
Authority
SE
Sweden
Prior art keywords
plasma activity
pvd
reactions
magnetron sputtering
enhanced plasma
Prior art date
Application number
SE0501717A
Other languages
English (en)
Other versions
SE529375C2 (sv
Inventor
Toril Myrtveit
Markus Rodmar
Torbjoern Selinder
Original Assignee
Sandvik Intellectual Property
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandvik Intellectual Property filed Critical Sandvik Intellectual Property
Priority to SE0501717A priority Critical patent/SE529375C2/sv
Priority to EP06445051.3A priority patent/EP1746178B1/en
Priority to IL176658A priority patent/IL176658A0/en
Priority to JP2006194631A priority patent/JP2007035623A/ja
Priority to CN2006101057500A priority patent/CN1900354B/zh
Priority to KR1020060068728A priority patent/KR20070012275A/ko
Priority to US11/490,502 priority patent/US20070017804A1/en
Publication of SE0501717L publication Critical patent/SE0501717L/sv
Publication of SE529375C2 publication Critical patent/SE529375C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
SE0501717A 2005-07-22 2005-07-22 Anordning för förbättrad plasmaaktivitet i PVD-reaktorer SE529375C2 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE0501717A SE529375C2 (sv) 2005-07-22 2005-07-22 Anordning för förbättrad plasmaaktivitet i PVD-reaktorer
EP06445051.3A EP1746178B1 (en) 2005-07-22 2006-06-20 Device for improving plasma activity in PVD-reactors
IL176658A IL176658A0 (en) 2005-07-22 2006-07-02 Device for improving plasma activity in pvd-reactors
JP2006194631A JP2007035623A (ja) 2005-07-22 2006-07-14 プラズマ活性を向上させる装置
CN2006101057500A CN1900354B (zh) 2005-07-22 2006-07-21 提高pvd反应器中的等离子体活度的装置
KR1020060068728A KR20070012275A (ko) 2005-07-22 2006-07-21 Ｐｖｄ 반응기에서 플라즈마 활성을 개선하기 위한 장치
US11/490,502 US20070017804A1 (en) 2005-07-22 2006-07-21 Device for improving plasma activity PVD-reactors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0501717A SE529375C2 (sv) 2005-07-22 2005-07-22 Anordning för förbättrad plasmaaktivitet i PVD-reaktorer

Publications (2)

Publication Number Publication Date
SE0501717L true SE0501717L (sv) 2007-01-23
SE529375C2 SE529375C2 (sv) 2007-07-24

Family

ID=37198970

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0501717A SE529375C2 (sv) 2005-07-22 2005-07-22 Anordning för förbättrad plasmaaktivitet i PVD-reaktorer

Country Status (7)

Country Link
US (1) US20070017804A1 (sv)
EP (1) EP1746178B1 (sv)
JP (1) JP2007035623A (sv)
KR (1) KR20070012275A (sv)
CN (1) CN1900354B (sv)
IL (1) IL176658A0 (sv)
SE (1) SE529375C2 (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113941708A (zh) * 2021-10-12 2022-01-18 桂林理工大学 一种增强PcBN复合片界面结合能力的制备方法

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* Cited by examiner, † Cited by third party
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US8878393B2 (en) * 2008-05-13 2014-11-04 Qualcomm Incorporated Wireless power transfer for vehicles
US9130407B2 (en) * 2008-05-13 2015-09-08 Qualcomm Incorporated Signaling charging in wireless power environment
US8854224B2 (en) * 2009-02-10 2014-10-07 Qualcomm Incorporated Conveying device information relating to wireless charging
US20100201312A1 (en) 2009-02-10 2010-08-12 Qualcomm Incorporated Wireless power transfer for portable enclosures
US9312924B2 (en) 2009-02-10 2016-04-12 Qualcomm Incorporated Systems and methods relating to multi-dimensional wireless charging
CN102011101B (zh) * 2009-09-04 2013-06-05 清华大学 金刚石薄膜的生长装置
US8895115B2 (en) 2010-11-09 2014-11-25 Southwest Research Institute Method for producing an ionized vapor deposition coating
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
JP5689051B2 (ja) * 2011-11-25 2015-03-25 株式会社神戸製鋼所 イオンボンバードメント装置
CN107507747A (zh) * 2017-08-17 2017-12-22 太仓劲松智能化电子科技有限公司 真空电子管制备方法
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion

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JPS5845892B2 (ja) * 1980-06-23 1983-10-13 大阪真空化学株式会社 スパツタ蒸着装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113941708A (zh) * 2021-10-12 2022-01-18 桂林理工大学 一种增强PcBN复合片界面结合能力的制备方法

Also Published As

Publication number Publication date
JP2007035623A (ja) 2007-02-08
KR20070012275A (ko) 2007-01-25
CN1900354A (zh) 2007-01-24
SE529375C2 (sv) 2007-07-24
EP1746178A2 (en) 2007-01-24
EP1746178A3 (en) 2007-09-12
EP1746178B1 (en) 2013-08-07
IL176658A0 (en) 2008-01-20
US20070017804A1 (en) 2007-01-25
CN1900354B (zh) 2011-08-03

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