JP4431386B2 - ナノ構造の機能層を形成する方法、およびこれにより作製される被覆層 - Google Patents
ナノ構造の機能層を形成する方法、およびこれにより作製される被覆層 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
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- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemical Vapour Deposition (AREA)
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- Drilling Tools (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
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Description
ナノ構造の機能層を形成する本発明の方法は従来技術に対して、使用されるプラズマパルス源によって非常に高いイオン密度がプラズマに達成され、析出の際に高いイオン密度を必要とする層を簡単に形成できるという利点を有する。この種の層の析出は、従来のPACVDプロセスでは付加的なイオン源を用いなければ不可能であったが、これを省略することができる。
本発明を図面に基づき、以下詳細に説明する。
図1は、本発明の方法を実施するためのマグネトロンスパッタ源の基本概略図を示す。
図2は、作製された機能層の一部の3次元表示である。
本発明は図1に示された被覆装置5から出発するものである。この被覆装置は、M. Diserens et al. 著「Interface and Coating Technology」, 108-109 (1998), pp.242に記載されたのと類似の形態である。
Claims (16)
- サブストレート(16)上にナノ構造の機能層(17)を形成する方法であって、
複数のプラズマ源(11,12)によって、パルス化されたプラズマ(13,14)を形成し、
該プラズマによりサブストレート(16)上に材料供給を介して、マトリクス相(30)と、これに埋め込まれたナノスケールの少なくとも1つの介在相(31)を析出する方法において、
前記複数のプラズマ源(11,12)を時間的に相関させ、または相互に同期してパルス駆動し、
非晶マトリクス相、金属マトリクス相、微結晶マトリクス相、または結晶質マトリクス相(30)と、平均粒子サイズが1nmから100nmのナノ結晶介在相(31)を析出し、
前記機能層を構成部材または切削工具に析出し、
前記プラズマ源(11,12)を500Hzから100kHzの周波数でパルス化し、かつ5kWから40kWのパルスピーク出力により駆動し、
前記機能層の形成は真空室(10)内で、10 -4 mbarから10 -2 mbarの動作圧で行い、かつサブストレート(16)および/またはサブストレート(16)上の機能層(17)が最大250℃に加熱されるように行う、ことを特徴とする方法。 - プラズマ源(11,12)は1:10から2:1のパルス・デューティ比によりパルス化される、請求項1記載の方法。
- プラズマ源(11,12)として、マグネトロンスパッタ源またはArc蒸着源を使用する、請求項1または2記載の方法。
- プラズマ源(11,12)を交互に、ユニポーラまたはバイポーラでパルス駆動し、プラズマ源(11,12)はそれぞれ配属されたプラズマ(13,14)を形成する、請求項1から3までのいずれか一項記載の方法。
- プラズマ(13,14)にプラズマガスおよび/または反応ガスを供給し、
前記プラズマガスは、アルゴンまたはヘリウムであり、
前記反応ガスは、窒素、酸素、水素または炭素含有ガスである、請求項1から4までのいずれか一項記載の方法。 - プラズマ源(11,12)とは別の付加的なエネルギー源を、プラズマ源(11,12)からサブストレート(16)に析出された材料にエネルギー供給するために使用し、
このエネルギー供給はサブストレート(16)の前方および/またはサブストレートに存在する材料に行う、請求項1から5までのいずれか一項記載の方法。 - エネルギー供給を、マイクロ波ユニット、イオン源ユニット、中空カソードユニット、UVユニット、またはプラズマ源(11,12)とサブストレート(16)との間に形成された電界を介して行い、および/またはサブストレート(16)に高周波のサブストレート電圧を印加する、請求項1から6までのいずれか一項記載の方法。
- サブストレート(16)を可動のまたは回転可能なサブストレート支持体(15)に配置し、それぞれ配属されたプラズマ(13,14)を備えるプラズマ源(11,12)の前を周期的に通過させ、サブストレート(16)をそれぞれプラズマに曝して材料を付着させる、請求項1から7までのいずれか一項記載の方法。
- 金属または合金、窒化シリコン、MoSi2、非晶炭素またはDLC(diamond like carbon)からなるマトリクス相(30)を形成し、
該マトリクス相にナノスケール介在相(31)としての酸化金属、炭化金属、浸炭窒化金属または他の硬質材料相を埋め込む、請求項1から8までのいずれか一項記載の方法。 - 複数の部分層から形成された機能層(17)を析出する、請求項1から8までのいずれか一項記載の方法。
- 機能層(17)および/または機能層(17)の少なくとも個々の部分層は化学的に段階付けられた組成を有するように形成される、請求項1から10までのいずれか一項記載の方法。
- 少なくとも近似的に矩形、寒暖状、鋸歯状、または正弦波状のパルス波形および/または異なる上昇関数および下降関数を有するパルス波形のパルスを使用する、請求項1から11までのいずれか一項記載の方法。
- ナノ結晶介在相(31)の平均粒子サイズは、3nmから30nmである、請求項1から12までのいずれか一項記載の方法。
- 前記プラズマ源(11,12)を10kHzから90kHzの周波数でパルス化する、請求項1から13までのいずれか一項記載の方法。
- 前記他の硬質材料相は、窒化ジルコニウム、窒化シリコン、窒化チタン、炭化チタン、炭化シリコン、酸化チタン、酸化クロム、酸化ジルコニウム、または酸化タンタルである、請求項9から14までのいずれか一項記載の方法。
- 前記プラズマ源(11,12)は1:4から1:1のパルス・デューティ比によりパルス化される、請求項2から15までのいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10141696A DE10141696A1 (de) | 2001-08-25 | 2001-08-25 | Verfahren zur Erzeugung einer nanostruktuierten Funktionsbeschichtung und damit herstellbare Beschichtung |
PCT/DE2002/003074 WO2003018862A2 (de) | 2001-08-25 | 2002-08-22 | Verfahren zur erzeugung einer nanostrukturierten funktionsbeschichtung und damit herstellbare beschichtung |
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JP2005500440A JP2005500440A (ja) | 2005-01-06 |
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US (1) | US7799420B2 (ja) |
EP (1) | EP1423551B1 (ja) |
JP (1) | JP4431386B2 (ja) |
AT (1) | ATE437249T1 (ja) |
AU (1) | AU2002336043A1 (ja) |
CZ (1) | CZ2004280A3 (ja) |
DE (2) | DE10141696A1 (ja) |
IL (2) | IL160411A0 (ja) |
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US6090343A (en) * | 1997-03-25 | 2000-07-18 | Rutgers University | Triphasic composite and method for making same |
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-
2001
- 2001-08-25 DE DE10141696A patent/DE10141696A1/de not_active Withdrawn
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2002
- 2002-08-22 JP JP2003523705A patent/JP4431386B2/ja not_active Expired - Fee Related
- 2002-08-22 US US10/487,817 patent/US7799420B2/en not_active Expired - Lifetime
- 2002-08-22 DE DE50213706T patent/DE50213706D1/de not_active Expired - Lifetime
- 2002-08-22 WO PCT/DE2002/003074 patent/WO2003018862A2/de active Application Filing
- 2002-08-22 AU AU2002336043A patent/AU2002336043A1/en not_active Abandoned
- 2002-08-22 CZ CZ2004280A patent/CZ2004280A3/cs unknown
- 2002-08-22 EP EP02769887A patent/EP1423551B1/de not_active Expired - Lifetime
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- 2002-08-22 IL IL16041102A patent/IL160411A0/xx unknown
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Also Published As
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IL160411A0 (en) | 2004-07-25 |
EP1423551A2 (de) | 2004-06-02 |
AU2002336043A1 (en) | 2003-03-10 |
DE10141696A1 (de) | 2003-03-13 |
JP2005500440A (ja) | 2005-01-06 |
CZ2004280A3 (cs) | 2004-12-15 |
IL160411A (en) | 2009-07-20 |
WO2003018862A2 (de) | 2003-03-06 |
ATE437249T1 (de) | 2009-08-15 |
US20050011748A1 (en) | 2005-01-20 |
DE50213706D1 (de) | 2009-09-03 |
WO2003018862A3 (de) | 2003-06-26 |
US7799420B2 (en) | 2010-09-21 |
EP1423551B1 (de) | 2009-07-22 |
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