RU2635834C2 - Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент - Google Patents
Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент Download PDFInfo
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- RU2635834C2 RU2635834C2 RU2015107986A RU2015107986A RU2635834C2 RU 2635834 C2 RU2635834 C2 RU 2635834C2 RU 2015107986 A RU2015107986 A RU 2015107986A RU 2015107986 A RU2015107986 A RU 2015107986A RU 2635834 C2 RU2635834 C2 RU 2635834C2
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- plasma
- chamber
- gaseous
- substrate
- silicon nitride
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 113
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 57
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 57
- 238000000151 deposition Methods 0.000 claims abstract description 53
- 230000008021 deposition Effects 0.000 claims abstract description 51
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 41
- 229910000077 silane Inorganic materials 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 238000009434 installation Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 24
- 230000000694 effects Effects 0.000 abstract description 16
- 230000005284 excitation Effects 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000001556 precipitation Methods 0.000 abstract description 7
- 230000003667 anti-reflective effect Effects 0.000 abstract description 4
- 238000005234 chemical deposition Methods 0.000 abstract description 4
- 230000003213 activating effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 55
- 239000012159 carrier gas Substances 0.000 description 21
- 239000003153 chemical reaction reagent Substances 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- H—ELECTRICITY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012176907 | 2012-08-09 | ||
| JP2012-176907 | 2012-08-09 | ||
| PCT/JP2013/070564 WO2014024729A1 (ja) | 2012-08-09 | 2013-07-30 | 太陽電池の製造方法、及びその製造方法により製造された太陽電池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2015107986A RU2015107986A (ru) | 2016-09-27 |
| RU2635834C2 true RU2635834C2 (ru) | 2017-11-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2015107986A RU2635834C2 (ru) | 2012-08-09 | 2013-07-30 | Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9559221B2 (enExample) |
| EP (1) | EP2884544B1 (enExample) |
| JP (1) | JP5884911B2 (enExample) |
| KR (1) | KR102097758B1 (enExample) |
| CN (1) | CN104521003B (enExample) |
| IN (1) | IN2015DN01821A (enExample) |
| MY (1) | MY170163A (enExample) |
| RU (1) | RU2635834C2 (enExample) |
| TW (1) | TWI622183B (enExample) |
| WO (1) | WO2014024729A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014024729A1 (ja) * | 2012-08-09 | 2014-02-13 | 信越化学工業株式会社 | 太陽電池の製造方法、及びその製造方法により製造された太陽電池 |
| JP6369680B2 (ja) * | 2014-05-30 | 2018-08-08 | パナソニックIpマネジメント株式会社 | 太陽電池 |
| US9559236B2 (en) * | 2014-09-24 | 2017-01-31 | Sunpower Corporation | Solar cell fabricated by simplified deposition process |
| CN106282965B (zh) * | 2016-08-31 | 2019-09-20 | 东方日升新能源股份有限公司 | 太阳能电池硅片的等离子增强化学气相沉积法 |
| US20210381107A1 (en) * | 2020-06-03 | 2021-12-09 | Micron Technology, Inc. | Material deposition systems, and related methods and microelectronic devices |
| CN115425114B (zh) * | 2022-09-30 | 2025-09-12 | 福建金石能源有限公司 | 一种异质结太阳能电池的制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5073804A (en) * | 1977-12-05 | 1991-12-17 | Plasma Physics Corp. | Method of forming semiconductor materials and barriers |
| US20090007966A1 (en) * | 2004-10-27 | 2009-01-08 | Takayuki Isaka | Solar cell and method for producing solar cell |
| JP2009260281A (ja) * | 2008-03-28 | 2009-11-05 | Mitsubishi Electric Corp | 薄膜形成方法および薄膜形成装置、並びにそれを用いて製造された薄膜半導体装置 |
| RU2417481C2 (ru) * | 2009-02-13 | 2011-04-27 | Российская Академия сельскохозяйственных наук Государственное научное учреждение Всероссийский научно-исследовательский институт электрификации сельского хозяйства (ГНУ ВИЭСХ РОССЕЛЬХОЗАКАДЕМИИ) | Фотоэлектрический преобразователь (варианты) и способ его изготовления (варианты) |
| WO2012036002A1 (ja) * | 2010-09-14 | 2012-03-22 | 信越化学工業株式会社 | 太陽電池及びその製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2808004B2 (ja) * | 1989-01-30 | 1998-10-08 | 京セラ株式会社 | 太陽電池 |
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- 2013-07-30 RU RU2015107986A patent/RU2635834C2/ru active
- 2013-07-30 KR KR1020157003298A patent/KR102097758B1/ko active Active
- 2013-07-30 JP JP2014529435A patent/JP5884911B2/ja active Active
- 2013-07-30 US US14/417,330 patent/US9559221B2/en active Active
- 2013-07-30 CN CN201380042132.4A patent/CN104521003B/zh active Active
- 2013-07-30 MY MYPI2015000152A patent/MY170163A/en unknown
- 2013-07-30 IN IN1821DEN2015 patent/IN2015DN01821A/en unknown
- 2013-08-08 TW TW102128462A patent/TWI622183B/zh active
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Also Published As
| Publication number | Publication date |
|---|---|
| RU2015107986A (ru) | 2016-09-27 |
| EP2884544A1 (en) | 2015-06-17 |
| CN104521003B (zh) | 2016-11-23 |
| WO2014024729A1 (ja) | 2014-02-13 |
| US9559221B2 (en) | 2017-01-31 |
| CN104521003A (zh) | 2015-04-15 |
| TWI622183B (zh) | 2018-04-21 |
| KR20150041785A (ko) | 2015-04-17 |
| EP2884544B1 (en) | 2018-05-09 |
| TW201428989A (zh) | 2014-07-16 |
| MY170163A (en) | 2019-07-09 |
| EP2884544A4 (en) | 2016-02-10 |
| IN2015DN01821A (enExample) | 2015-05-29 |
| US20150206990A1 (en) | 2015-07-23 |
| JPWO2014024729A1 (ja) | 2016-07-25 |
| KR102097758B1 (ko) | 2020-04-07 |
| JP5884911B2 (ja) | 2016-03-15 |
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