JP5410714B2 - 反射防止膜成膜方法および反射防止膜成膜装置 - Google Patents
反射防止膜成膜方法および反射防止膜成膜装置 Download PDFInfo
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- JP5410714B2 JP5410714B2 JP2008218700A JP2008218700A JP5410714B2 JP 5410714 B2 JP5410714 B2 JP 5410714B2 JP 2008218700 A JP2008218700 A JP 2008218700A JP 2008218700 A JP2008218700 A JP 2008218700A JP 5410714 B2 JP5410714 B2 JP 5410714B2
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- film
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- film forming
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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Description
Claims (1)
- 太陽電池の半導体表面に窒化シリコン(SiNx)膜の反射防止膜を形成する成膜方法において、
前記半導体表面の自然酸化膜を除去する洗浄処理工程と、
前記洗浄処理工程で自然酸化膜を除去した後、大気圧に近い状態において550℃まで急激に加熱する加熱工程と、
平行平板型CVD装置を用いて前記半導体表面にN2ガス又は不活性ガスのプラズマ処理によるイオン照射を行い、前記加熱工程で半導体表面に再成長した自然酸化膜を洗浄する前処理工程と、
前記前処理工程後に、前記平行平板型CVD装置を用いて当該半導体表面にプラズマ処理により窒化シリコン(SiNx)膜を成膜する成膜工程とを備え、
前記前処理工程および前記成膜工程を低周波プラズマ処理により行うことを特徴とする太陽電池の反射防止膜成膜方法。
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JP2008218700A JP5410714B2 (ja) | 2008-08-27 | 2008-08-27 | 反射防止膜成膜方法および反射防止膜成膜装置 |
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JP2008218700A JP5410714B2 (ja) | 2008-08-27 | 2008-08-27 | 反射防止膜成膜方法および反射防止膜成膜装置 |
Publications (2)
Publication Number | Publication Date |
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JP2010056242A JP2010056242A (ja) | 2010-03-11 |
JP5410714B2 true JP5410714B2 (ja) | 2014-02-05 |
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JP2008218700A Expired - Fee Related JP5410714B2 (ja) | 2008-08-27 | 2008-08-27 | 反射防止膜成膜方法および反射防止膜成膜装置 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5707885B2 (ja) * | 2010-11-15 | 2015-04-30 | 三菱マテリアル株式会社 | パワーモジュール用基板、冷却器付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法 |
JP5707886B2 (ja) * | 2010-11-15 | 2015-04-30 | 三菱マテリアル株式会社 | パワーモジュール用基板、冷却器付パワーモジュール用基板、パワーモジュールおよびパワーモジュール用基板の製造方法 |
CN102244109B (zh) * | 2011-06-30 | 2013-06-12 | 西安黄河光伏科技股份有限公司 | 一种晶硅太阳电池减反射膜及其制备方法 |
WO2013161146A1 (ja) * | 2012-04-26 | 2013-10-31 | シャープ株式会社 | 半導体装置の製造方法 |
JP2014055111A (ja) * | 2013-12-11 | 2014-03-27 | Sharp Corp | 導電性窒化シリコン膜、導電性窒化シリコン膜積層体、および光電変換装置 |
KR102212042B1 (ko) * | 2014-04-21 | 2021-02-04 | 에스케이이노베이션 주식회사 | 원자층 증착법으로 형성된 버퍼층을 포함하는 태양전지 및 이의 제조방법 |
KR102212040B1 (ko) * | 2014-04-21 | 2021-02-04 | 에스케이이노베이션 주식회사 | 원자층 증착법으로 형성된 버퍼층을 포함하는 태양전지의 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03222327A (ja) * | 1990-01-26 | 1991-10-01 | Fujitsu Ltd | 表面処理方法 |
JP2842385B2 (ja) * | 1996-06-27 | 1999-01-06 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2002299238A (ja) * | 2001-04-04 | 2002-10-11 | Sony Corp | 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法 |
JP2005159182A (ja) * | 2003-11-27 | 2005-06-16 | Kyocera Corp | プラズマcvd装置の処理方法 |
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- 2008-08-27 JP JP2008218700A patent/JP5410714B2/ja not_active Expired - Fee Related
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