RU2015107986A - Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент - Google Patents

Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент Download PDF

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RU2015107986A
RU2015107986A RU2015107986A RU2015107986A RU2015107986A RU 2015107986 A RU2015107986 A RU 2015107986A RU 2015107986 A RU2015107986 A RU 2015107986A RU 2015107986 A RU2015107986 A RU 2015107986A RU 2015107986 A RU2015107986 A RU 2015107986A
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plasma
gaseous
chamber
silane
solar cell
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Мицухито ТАКАХАСИ
Такенори ВАТАБЕ
Хироюки ОЦУКА
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Син-Эцу Кемикал Ко., Лтд.
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Abstract

1. Способ изготовления солнечного элемента, содержащий этап формирования на поверхности полупроводниковой подложки просветляющей пленки, состоящей из нитрида кремния, с использованием установки плазмохимического осаждения из газовой фазы с удаленной плазмой, отличающийся тем, чтоупомянутая установка плазмохимического осаждения из газовой фазы с удаленной плазмой включает в себя камеру осаждения, где полупроводниковая подложка размещается с возможностью транспортировки, множество расположенных над камерой осаждения плазменных камер в проточном сообщении с ней, при этом каждая выполнена с возможностью генерирования потока плазмы газообразного аммиака, введения газообразного силана в поток плазмы и инжектирования потока плазмы в камеру осаждения, и регулятор расхода, связанный с плазменными камерами, для регулирования соотношения расходов газообразного аммиака и газообразного силана, вводимых в каждую плазменную камеру,первый слой нитрида кремния осаждается на полупроводниковую подложку из потока плазмы из первой плазменной камеры, а по мере того как подложка перемещается под вторую плазменную камеру, осаждается второй слой нитрида кремния с составом, отличным от состава первого слоя нитрида кремния, из потока плазмы с другим соотношением расходов газообразного аммиака и газообразного силана, чем в первой плазменной камере.2. Способ изготовления солнечного элемента по п. 1, в котором соотношение расходов газообразного аммиака и газообразного силана (расход газообразного аммиака/расход газообразного силана) в первой плазменной камере составляет 0,1-1,0.3. Способ изготовления солнечного элемента по п. 2, в котором

Claims (6)

1. Способ изготовления солнечного элемента, содержащий этап формирования на поверхности полупроводниковой подложки просветляющей пленки, состоящей из нитрида кремния, с использованием установки плазмохимического осаждения из газовой фазы с удаленной плазмой, отличающийся тем, что
упомянутая установка плазмохимического осаждения из газовой фазы с удаленной плазмой включает в себя камеру осаждения, где полупроводниковая подложка размещается с возможностью транспортировки, множество расположенных над камерой осаждения плазменных камер в проточном сообщении с ней, при этом каждая выполнена с возможностью генерирования потока плазмы газообразного аммиака, введения газообразного силана в поток плазмы и инжектирования потока плазмы в камеру осаждения, и регулятор расхода, связанный с плазменными камерами, для регулирования соотношения расходов газообразного аммиака и газообразного силана, вводимых в каждую плазменную камеру,
первый слой нитрида кремния осаждается на полупроводниковую подложку из потока плазмы из первой плазменной камеры, а по мере того как подложка перемещается под вторую плазменную камеру, осаждается второй слой нитрида кремния с составом, отличным от состава первого слоя нитрида кремния, из потока плазмы с другим соотношением расходов газообразного аммиака и газообразного силана, чем в первой плазменной камере.
2. Способ изготовления солнечного элемента по п. 1, в котором соотношение расходов газообразного аммиака и газообразного силана (расход газообразного аммиака/расход газообразного силана) в первой плазменной камере составляет 0,1-1,0.
3. Способ изготовления солнечного элемента по п. 2, в котором соотношение расходов газообразного аммиака и газообразного силана (расход газообразного аммиака/расход газообразного силана) во второй плазменной камере составляет 1,5-3,0.
4. Способ изготовления солнечного элемента по любому из пп. 1-3, в котором полупроводниковая подложка представляет собой кремниевую подложку одного типа проводимости с диффузионным слоем противоположного типа проводимости, сформированным на поверхности подложки, которая предназначена быть светопринимающей поверхностью, а просветляющая пленка формируется на этом диффузионном слое.
5. Способ изготовления солнечного элемента по любому из пп. 1-3, в котором полупроводниковая подложка представляет собой кремниевую подложку одного типа проводимости с диффузионным слоем такого же типа проводимости, сформированным на по меньшей мере участке поверхности подложки, которая предназначена быть поверхностью, отдаленной от светопринимающей поверхности, а просветляющая пленка формируется на этой несущей диффузионный слой поверхности.
6. Солнечный элемент, изготовленный способом по любому из пп. 1-5.
RU2015107986A 2012-08-09 2013-07-30 Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент RU2635834C2 (ru)

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PCT/JP2013/070564 WO2014024729A1 (ja) 2012-08-09 2013-07-30 太陽電池の製造方法、及びその製造方法により製造された太陽電池

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CN104521003A (zh) 2015-04-15
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CN104521003B (zh) 2016-11-23
IN2015DN01821A (ru) 2015-05-29
JPWO2014024729A1 (ja) 2016-07-25
JP5884911B2 (ja) 2016-03-15
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