RU2502154C1 - Поперечное рассеивание тепла 3-d интегральной схемы - Google Patents

Поперечное рассеивание тепла 3-d интегральной схемы Download PDF

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Publication number
RU2502154C1
RU2502154C1 RU2012118036/28A RU2012118036A RU2502154C1 RU 2502154 C1 RU2502154 C1 RU 2502154C1 RU 2012118036/28 A RU2012118036/28 A RU 2012118036/28A RU 2012118036 A RU2012118036 A RU 2012118036A RU 2502154 C1 RU2502154 C1 RU 2502154C1
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RU
Russia
Prior art keywords
heat
crystal
crystals
conducting material
layers
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RU2012118036/28A
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English (en)
Russian (ru)
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RU2012118036A (ru
Inventor
Кеннет КАСКУН
Шицюнь ГУ
Мэттью М. НОВАК
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Квэлкомм Инкорпорейтед
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Publication of RU2012118036A publication Critical patent/RU2012118036A/ru
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/254Diamond
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/255Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/288Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
RU2012118036/28A 2008-05-05 2009-04-27 Поперечное рассеивание тепла 3-d интегральной схемы RU2502154C1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/115,076 2008-05-05
US12/115,076 US8502373B2 (en) 2008-05-05 2008-05-05 3-D integrated circuit lateral heat dissipation

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
RU2010149596/28A Division RU2459315C1 (ru) 2008-05-05 2009-04-27 Поперечное рассеивание тепла 3-d интегральной схемы

Publications (2)

Publication Number Publication Date
RU2012118036A RU2012118036A (ru) 2013-11-10
RU2502154C1 true RU2502154C1 (ru) 2013-12-20

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RU2012118036/28A RU2502154C1 (ru) 2008-05-05 2009-04-27 Поперечное рассеивание тепла 3-d интегральной схемы
RU2010149596/28A RU2459315C1 (ru) 2008-05-05 2009-04-27 Поперечное рассеивание тепла 3-d интегральной схемы

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Country Status (11)

Country Link
US (1) US8502373B2 (https=)
EP (1) EP2286452A1 (https=)
JP (3) JP2011520286A (https=)
KR (1) KR101255675B1 (https=)
CN (2) CN102017139B (https=)
BR (1) BRPI0912376A2 (https=)
CA (1) CA2720966C (https=)
MX (1) MX2010011848A (https=)
RU (2) RU2502154C1 (https=)
TW (1) TWI496269B (https=)
WO (1) WO2009137286A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232137B2 (en) * 2009-12-10 2012-07-31 Intersil Americas Inc. Heat conduction for chip stacks and 3-D circuits
KR20110088234A (ko) * 2010-01-28 2011-08-03 삼성전자주식회사 적층 반도체 패키지의 제조 방법
US8405203B2 (en) 2010-09-10 2013-03-26 Cisco Technology, Inc. Semiconductor package with integrated substrate thermal slug
US8193039B2 (en) * 2010-09-24 2012-06-05 Advanced Micro Devices, Inc. Semiconductor chip with reinforcing through-silicon-vias
US9704793B2 (en) 2011-01-04 2017-07-11 Napra Co., Ltd. Substrate for electronic device and electronic device
JP5250707B2 (ja) * 2011-05-26 2013-07-31 有限会社 ナプラ 電子機器用基板及び電子機器
US8367478B2 (en) 2011-06-02 2013-02-05 International Business Machines Corporation Method and system for internal layer-layer thermal enhancement
US8531032B2 (en) 2011-09-02 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Thermally enhanced structure for multi-chip device
FR2999017A1 (fr) * 2012-12-03 2014-06-06 St Microelectronics Sa Structure integree tridimensionnelle a dissipation thermique amelioree
TWI509758B (zh) 2012-12-26 2015-11-21 國立交通大學 三維積體電路
US10403601B2 (en) * 2016-06-17 2019-09-03 Fairchild Semiconductor Corporation Semiconductor package and related methods
US10256188B2 (en) 2016-11-26 2019-04-09 Texas Instruments Incorporated Interconnect via with grown graphitic material
US10811334B2 (en) 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
US11004680B2 (en) 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
US11676880B2 (en) 2016-11-26 2023-06-13 Texas Instruments Incorporated High thermal conductivity vias by additive processing
US10529641B2 (en) 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US11276667B2 (en) 2016-12-31 2022-03-15 Intel Corporation Heat removal between top and bottom die interface
US10163864B1 (en) * 2017-08-16 2018-12-25 Globalfoundries Inc. Vertically stacked wafers and methods of forming same
US10566313B1 (en) 2018-08-21 2020-02-18 International Business Machines Corporation Integrated circuit chip carrier with in-plane thermal conductance layer
US10643957B2 (en) 2018-08-27 2020-05-05 Nxp B.V. Conformal dummy die
US10854530B1 (en) 2019-07-31 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Heat dissipation structures
US11211364B1 (en) * 2020-06-24 2021-12-28 Micron Technology, Inc. Semiconductor device assemblies and systems with improved thermal performance and methods for making the same
CN114334854A (zh) * 2020-09-30 2022-04-12 华为技术有限公司 芯片及其制造方法、电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764804A (en) * 1986-02-21 1988-08-16 Hitachi, Ltd. Semiconductor device and process for producing the same
US4823234A (en) * 1985-08-16 1989-04-18 Dai-Ichi Seiko Co., Ltd. Semiconductor device and its manufacture
US6278181B1 (en) * 1999-06-28 2001-08-21 Advanced Micro Devices, Inc. Stacked multi-chip modules using C4 interconnect technology having improved thermal management
RU2299497C2 (ru) * 2005-05-06 2007-05-20 Геннадий Андреевич Блинов Способ изготовления трехмерного многокристального микромодуля

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731701A (en) * 1987-05-12 1988-03-15 Fairchild Semiconductor Corporation Integrated circuit package with thermal path layers incorporating staggered thermal vias
JPS63293931A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd 半導体装置およびその製造方法
US5050039A (en) * 1990-06-26 1991-09-17 Digital Equipment Corporation Multiple circuit chip mounting and cooling arrangement
US5414299A (en) * 1993-09-24 1995-05-09 Vlsi Technology, Inc. Semi-conductor device interconnect package assembly for improved package performance
WO1996001497A1 (de) * 1994-07-05 1996-01-18 Siemens Aktiengesellschaft Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung
US5532512A (en) * 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
JP2905736B2 (ja) * 1995-12-18 1999-06-14 株式会社エイ・ティ・アール光電波通信研究所 半導体装置
US20020089016A1 (en) * 1998-07-10 2002-07-11 Jean-Pierre Joly Thin layer semi-conductor structure comprising a heat distribution layer
JP2000040382A (ja) 1998-07-23 2000-02-08 Sony Corp 不揮発性半導体記憶装置およびそのデータ書き込み方法
US6573538B2 (en) * 1998-11-12 2003-06-03 International Business Machines Corporation Semiconductor device with internal heat dissipation
KR20000011896U (ko) * 1998-12-10 2000-07-05 윤종용 반도체 디바이스의 방열을 위한 히트 싱크 구조
TW413874B (en) * 1999-04-12 2000-12-01 Siliconware Precision Industries Co Ltd BGA semiconductor package having exposed heat dissipation layer and its manufacturing method
JP3570672B2 (ja) 1999-11-04 2004-09-29 ローム株式会社 半導体装置
US6720662B1 (en) * 1999-11-04 2004-04-13 Rohm Co., Ltd. Semiconductor device of chip-on-chip structure with a radiation noise shield
US6337513B1 (en) * 1999-11-30 2002-01-08 International Business Machines Corporation Chip packaging system and method using deposited diamond film
US6333557B1 (en) * 2000-09-12 2001-12-25 International Business Machines Corporation Semiconductor chip structures with embedded thermal conductors
US6512292B1 (en) * 2000-09-12 2003-01-28 International Business Machines Corporation Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces
US6507115B2 (en) * 2000-12-14 2003-01-14 International Business Machines Corporation Multi-chip integrated circuit module
US6519154B1 (en) * 2001-08-17 2003-02-11 Intel Corporation Thermal bus design to cool a microelectronic die
JP4416376B2 (ja) * 2002-05-13 2010-02-17 富士通株式会社 半導体装置及びその製造方法
US7138711B2 (en) * 2002-06-17 2006-11-21 Micron Technology, Inc. Intrinsic thermal enhancement for FBGA package
JP2004200347A (ja) * 2002-12-18 2004-07-15 Sumitomo Electric Ind Ltd 高放熱性能を持つ発光ダイオード
US6753600B1 (en) * 2003-01-28 2004-06-22 Thin Film Module, Inc. Structure of a substrate for a high density semiconductor package
US7180745B2 (en) * 2003-10-10 2007-02-20 Delphi Technologies, Inc. Flip chip heat sink package and method
US7205651B2 (en) * 2004-04-16 2007-04-17 St Assembly Test Services Ltd. Thermally enhanced stacked die package and fabrication method
US20060025515A1 (en) * 2004-07-27 2006-02-02 Mainstream Engineering Corp. Nanotube composites and methods for producing
CN100377340C (zh) * 2004-08-11 2008-03-26 鸿富锦精密工业(深圳)有限公司 散热模组及其制备方法
JP2006120976A (ja) * 2004-10-25 2006-05-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US7416789B2 (en) * 2004-11-01 2008-08-26 H.C. Starck Inc. Refractory metal substrate with improved thermal conductivity
US20060145356A1 (en) * 2005-01-06 2006-07-06 International Business Machines Corporation On-chip cooling
US20070235847A1 (en) * 2005-09-19 2007-10-11 Shriram Ramanathan Method of making a substrate having thermally conductive structures and resulting devices
US7528494B2 (en) * 2005-11-03 2009-05-05 International Business Machines Corporation Accessible chip stack and process of manufacturing thereof
US7514116B2 (en) * 2005-12-30 2009-04-07 Intel Corporation Horizontal Carbon Nanotubes by Vertical Growth and Rolling
JP2007221078A (ja) 2006-02-20 2007-08-30 Denso Corp 半導体装置
US7414316B2 (en) * 2006-03-01 2008-08-19 Freescale Semiconductor, Inc. Methods and apparatus for thermal isolation in vertically-integrated semiconductor devices
US7738249B2 (en) * 2007-10-25 2010-06-15 Endicott Interconnect Technologies, Inc. Circuitized substrate with internal cooling structure and electrical assembly utilizing same
US8497587B2 (en) * 2009-12-30 2013-07-30 Stmicroelectronics Pte Ltd. Thermally enhanced expanded wafer level package ball grid array structure and method of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823234A (en) * 1985-08-16 1989-04-18 Dai-Ichi Seiko Co., Ltd. Semiconductor device and its manufacture
US4764804A (en) * 1986-02-21 1988-08-16 Hitachi, Ltd. Semiconductor device and process for producing the same
US6278181B1 (en) * 1999-06-28 2001-08-21 Advanced Micro Devices, Inc. Stacked multi-chip modules using C4 interconnect technology having improved thermal management
RU2299497C2 (ru) * 2005-05-06 2007-05-20 Геннадий Андреевич Блинов Способ изготовления трехмерного многокристального микромодуля

Also Published As

Publication number Publication date
CN102017139B (zh) 2013-05-08
US20090273068A1 (en) 2009-11-05
KR20110004475A (ko) 2011-01-13
CA2720966A1 (en) 2009-11-12
JP5788379B2 (ja) 2015-09-30
MX2010011848A (es) 2010-11-30
RU2459315C1 (ru) 2012-08-20
JP2015167259A (ja) 2015-09-24
BRPI0912376A2 (en) 2018-02-27
JP2013077837A (ja) 2013-04-25
RU2012118036A (ru) 2013-11-10
US8502373B2 (en) 2013-08-06
EP2286452A1 (en) 2011-02-23
CN103219328A (zh) 2013-07-24
CA2720966C (en) 2015-06-30
TW201005917A (en) 2010-02-01
TWI496269B (zh) 2015-08-11
RU2010149596A (ru) 2012-06-20
JP2011520286A (ja) 2011-07-14
CN102017139A (zh) 2011-04-13
KR101255675B1 (ko) 2013-04-17
CN103219328B (zh) 2017-04-12
WO2009137286A1 (en) 2009-11-12

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