TWI455278B - 用於堆疊式積體電路裝置之主動式熱控制 - Google Patents
用於堆疊式積體電路裝置之主動式熱控制 Download PDFInfo
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Description
本揭示案係關於積體電路(IC)。更具體言之,本揭示案係關於多層次(multi-tiered)IC裝置,且甚至更具體言之係關於用於該等多層次IC裝置內之主動式熱控制之系統及方法。
在IC技術中,存在將晶片堆疊在一起以形成多層次(3-D)IC裝置(亦稱為多層IC裝置或堆疊式IC裝置)之需要。在將晶片堆疊時產生之一挑戰係熱導率被減小。因此,熱點可存在,且將熱量自熱源移開之能力很小。由於堆疊式IC之減小的尺寸(基板厚度在為100微米至約6-50微米),功率密度上升而橫向熱導率被減小。
一種用於增加橫向熱導率之方法為增加基板厚度。此又會負面影響堆疊式IC裝置之合意的形狀因數,且使效能降級。
當將兩個以上層次堆疊時,存在一另外的挑戰。在此等情形中,堆疊式IC裝置可含有多個氧化層,每一對堆疊層次之間一個氧化層。氧化物(為不良熱導體)增添散熱問題。
存在若干種用於處理熱導率問題之方法。一種方法將一導熱層(heat conducting layer)定位於該等層次之間。通常,導熱層為金屬的且因此可能會干擾層間電接線。另一種方法使用矽貫孔(TSV)以將熱量自堆疊式IC裝置之一內部層次移至一表面層次且接著使用傳統方法(諸如將高熱導率材料定位於該表面層次上)自該表面層次移除熱量。挑戰伴隨此解決方案產生。舉例而言,由於各層次中之電路布局要求,並非總是有可能將TSV定位於所需位置。
另一種方法係使冷卻材料循環穿過堆疊式IC裝置以將熱點冷卻。冷卻循環解決方案造價昂貴,且由於移動液體而需要抽汲機制及對液體流道(liquid channel)之緊密公差。再者,由於電路布局要求,可能不可能「使裝置垂直」以將冷卻材料引導至所需位置。藉由迫使冷卻液體穿過基板本身在某種程度上克服垂直化問題,但此方法並非沒有一系列另外的問題及成本。
一堆疊式IC裝置中之熱導率可藉由在該堆疊式IC裝置中建構一或多個主動式溫度控制裝置予以改良。在一實施例中,該等控制裝置為熱電(TE)裝置,諸如帕耳帖(Peltier)裝置。該等TE裝置可接著受選擇性控制以按需移除或添加熱量以便將該堆疊式IC裝置維持在一已界定溫度範圍內或以其他方式使該堆疊式IC裝置達到一合意溫度。主動式溫度控制元件可為在該堆疊式IC裝置中產生之P-N接面且可用以按需要使該熱量橫向及/或垂直移動。
前文已頗為廣泛地概述本發明之特徵及技術優點以便可更好地理解隨後之實施方式。下文中將描述本發明之額外特徵及優點,其形成本發明之申請專利範圍之主題。熟習此項技術者應瞭解,所揭示之概念及特定實施例可易於用作修改或設計其他結構以用於執行本發明之相同目的之基礎。熟習此項技術者亦應認識到,此等等效構造並不脫離如在附加之申請專利範圍中陳述之本發明之精神及範疇。當結合附圖考慮時,自以下描述可更好地理解據信為本發明所特有之新穎特徵(關於其組織及操作方法)以及其他目標及優點。然而,應明確理解,為達成說明及描述之目的而提供該等圖中之每一者,且其並不意欲作為本發明之限制的界定。
為達成對本發明之更完整理解,現參考結合隨附圖式進行的以下描述。
圖1為具有頂部層次11及底部層次12之多層次IC裝置10之示意圖。頂部層次11具有一主動式電路(面部)102及一基板(背部)101。底部層次12具有一主動式電路(面部)103及一基板(背部)104。面部102/103含有用以連接若干組件(或端子)(諸如各層次上之一組件109)之連接108。該等連接係使用連接器路徑(諸如路徑107)及貫孔(諸如貫孔106)來進行
為達成說明之目的,位置110在此實施例中受熱困擾(thermally troubled)。亦即,位置110為堆疊式IC裝置10中時常存在或可能存在之「熱點」。在此情況下,熱點意謂:當堆疊式IC裝置10操作時,在位置110處或在位置110周圍的區域之溫度可變得不合意地高於層次12之其他部分。由於層次11堆疊於層次12上,且較佳地由於每一層次之減小的厚度,層次12內之橫向熱散播被減小。另外,氣隙111可形成於層次11與12之間,從而減少自該熱點向上之熱流。
如上文所論述,有諸多理由在一堆疊式IC裝置內包括冷卻功能性或結構。但亦有理由加熱一堆疊式IC裝置或其部分。舉例而言,當設計適應性電壓調整電路時,需要整個堆疊式IC裝置具有均一的溫度。因此,若在該堆疊式IC裝置中之一層次上有一些「變熱」之局部區域(亦即,本質上並非熱點,而是在比一層次內之其他區域更溫熱之溫度下操作之局部區域),則可能需要或有必要加熱該層次之較冷區域,使得該堆疊式IC裝置具有相對恆定或均一之溫度。在一些情形中,將堆疊式IC裝置初始化至所要求溫度係需要的或重要的。舉例而言,感應器可能需要為熱的以便操作,且TE可用於減少初始加熱時間。
另外,選擇性加熱及/或冷卻在堆疊式IC裝置中可為所要求的或需要的。舉例而言,選擇性加熱或冷卻或其組合可用以整平矽上之溫度梯度以消除由基板中之溫度差異引起之應力。再者,選擇性溫度控制可用以允許堆疊式IC裝置至少臨時在一些溫度環境中操作,堆疊式IC裝置原本不是設計用來在該等溫度環境中操作。
圖2展示用於消除來自熱點110之熱量之先前技術解決方案的一實例。在此解決方案中,TSV陣列200定位於熱點110上方,使得可將自熱點110流出之熱量傳導穿過面103,跨越空隙111,穿過面102且穿出貫孔201。除了使熱量移動穿過各層及空隙所固有之熱導率問題之外,在一些情形中,電路或其他元件(諸如元件202)可能定位於熱流路徑內,從而減小(且有時消除)TSV陣列200之效用。
圖3展示根據本發明之教示之一具有主動式溫度控制之堆疊式IC裝置30的一實施例。一TE裝置300包括一對P-N接面。每一P-N接面包括一P型元件301及一N型元件302,以及一底部導體303。視電流流過該P-N接面所在之方向而定,該底部導體303可吸引熱量或提供熱量。在一實施例中,TE裝置300為帕耳帖裝置。儘管展示一對P-N接面,但本發明不限於此組態。而是可提供更多或更少P-N接面。
控制電路304用以建立穿過該P-N接面之電流流向。控制電路304亦控制電流密度。電路304經由一輸入(諸如輸入321)將選擇性電流控制提供給TE裝置300。在一實施例中,TE裝置300操作以使得,基於電流方向,頂面(未指定參考數字之頂部)加熱而另一面(例如底部303)冷卻。
來自熱點110之熱能向上穿過面103與102,達到裝置300。若需要,可藉由建構穿過該等面之流道(貫孔)而促進此熱流。藉由選擇適當電路密度及電流流向,裝置300用以移除熱量,從而將堆疊式IC裝置30冷卻。散熱片或其他熱傳遞裝置(未圖示)可位於與TE裝置300鄰近之層次11之表面上以輔助TE裝置300自堆疊式IC裝置30移除熱量。應注意,堆疊式IC裝置30可具有提供於與所需區域一樣多的不同區域中之TE裝置300,其中該等TE裝置300中之一些TE裝置注入熱量其他TE裝置移除熱量。
應注意,P-N接面材料經展示為完全穿過層次11之基板,在另一實施例中,P-N材料部分填充該基板,且接面形成於底部導體303附近。在此實施例中,每一貫孔之頂部部分由金屬化予以填充,從而在該貫孔內產生接觸。
在一些實施例中,「熱點」可與冷卻裝置共同位於同一層中,從而導致橫向熱位移。在此情形中,可在基板內建構一水平溝槽以在同一基板內橫向傳遞熱量。該溝槽之第一部分將包括P型材料,且該溝槽之另一部分將包括N型材料。
圖4A至4G展示一種製造一具有主動式溫度控制之多層IC裝置之例示性方法。
圖4A展示:層次11與層次12堆疊,且一些位置(諸如層次11之基板中之位置401至405)由消耗性填充材料完全填充。如將看出,一主動式溫度控制元件將建構於位置400處。
圖4B展示保護性材料410覆蓋位置401至404,為該製程中之下一步驟作準備。未覆蓋位置405將隨著製程繼續而變為標準TSV。
圖4C展示由金屬層420將該等未覆蓋位置405A金屬化以產生標準TSV405A。銅或任何合意金屬可用於此目的,其與該堆疊式IC裝置之其他元件相容。因此,如圖4C中所示,未覆蓋位置現含有如405A處所示之金屬,而元件401至404仍受保護且由消耗性材料填充。
圖4D展示移除保護性材料410之部分410-2及410-4,而將部分410-1及410-3留在適當位置。貫孔402及404內之消耗性材料亦展示為已移除。
圖4E展示P型熱電材料沈積於位置402及404內。P型材料尚未沈積於位置401及403內,因為該等位置仍受部分410-1及410-3保護且因此仍含有消耗性材料。
圖4F展示移除保護性材料410之部分410-1及410-3以將貫孔401及403暴露。接著自貫孔401及403移除消耗性材料。
圖4G展示N型熱材料沈積於位置401及403內,從而完成該溫度控制裝置在層11內的形成。用於帕耳帖裝置之典型材料為碲化鉍、Sb2Te3、PbTe及SiGe,但同樣可使用其他材料(諸如晶體熱子玻璃或奈米材料)。再者,有可能在一金屬對金屬接面(諸如銅-鎳)中使用兩種金屬。在此實施例中,鎳填充TSV 401至404,且銅為標準金屬化。因此,每一TSV 401至404為潛在帕耳帖裝置。此帕耳帖結構有兩個優點。第一優點為用於P型及N型填充之遮蔽步驟得以移除。第二優點為帕耳帖裝置之密度得以增加,因為TSV 401至404之一面將作為冷卻點而另一面將為加熱面。當然,Z方向中之熱傳遞得以改良而X及Y方向中之熱傳遞變得更難。
儘管描述已展示首先沈積P型材料且隨後沈積N型材料,但該次序並非關鍵。亦即,在便利時可首先沈積N型材料。
應指出,由基板中之電路元件產生之溫度差異可用以驅動一電壓。可捕捉由此產生之電壓(例如)以驅動其他電路元件(如圖3之來自控制電路304之接線320所示)。此將有效地反轉TE裝置300之操作。TE裝置300將使受熱困擾之區域(在圖3中,該區域將為熱點110)冷卻,因為熱能藉由轉化成電能而自熱點得以移除。淨效應於是將為,堆疊式IC裝置30整體上將無淨冷卻(因為能量在其他地方被返回至堆疊式IC裝置30),但在「熱點」處將有局部冷卻。因此,節省堆疊式IC裝置30之總體能量。
帕耳帖裝置為需要能量以將熱量自一點移至另一點之熱泵。由於所揭示實施例在系統中具有兩個點,故將熱能自一難以移除(高熱阻)之點移至一較容易移除之位置,因此將熱量更均勻地分布於系統內。因此,若帕耳帖裝置用以移動熱量,則會增加系統之總能量需求。因為TE裝置可取決於電流流向而移除或添加熱量,所以裝置可用以選擇性地將堆疊式IC裝置(或其部分)加熱或冷卻。
在一實施例中,帕耳帖裝置為能量捕捉器:可回收由堆疊式IC裝置操作產生之一些熱量。控制系統可切換帕耳帖裝置以將熱量自點A移至點B(正向偏壓),或自點B移至點A(反向偏壓),或自點A與B之間的溫度差異捕捉熱量以便為系統提供動力。此TE系統之能量均衡將取決於帕耳帖裝置之效率及系統之工作循環。因此,帕耳帖裝置可基於系統內之溫度梯度而自整個系統回收一些能量。在一存在兩個以上層次之實施例中,可提供堆疊之帕耳帖裝置以改良能量捕捉效率。舉例而言,一冷卻帕耳帖裝置可將一層次冷卻,從而將熱量抽汲至一鄰近層次。該鄰近層次可使用所抽汲熱量以回收額外能量。
雖然已詳細描述本發明及其優點,但應理解,在不脫離如由附加之申請專利範圍界定之本發明之精神及範疇的情況下,可在本文中作出各種改變、替代及更改。此外,本發明之範疇並不意欲限於本說明書中所描述之製程、機器、製造、物質之組成、手段、方法及步驟之特定實施例。如熟習此項技術者將易於自本發明之揭示內容瞭解:根據本發明,可利用當前存在或日後將開發之執行與本文中描述之對應實施例大體相同功能或達成大體上相同結果之製程、機器、製造、物質之組成、手段、方法或步驟。因此,附加之申請專利範圍意欲在其範疇內包括此等製程、機器、製造、物質之組成、手段、方法或步驟。
10...多層次體積電路裝置/堆疊式積體電路裝置
11...頂部層次
12...底部層次
30...堆疊式積體電路裝置
101...基板(背部)
102...主動式電路(面部)
103...主動式電路(面部)
104...基板(背部)
106...貫孔
107...路徑
108...連接
109...組件
110...位置/熱點
111...氣隙
200...矽貫孔陣列
201...貫孔
202...元件
300...熱電裝置
301...P型元件
302...N型元件
303...底部導體/底部
304...控制電路
320...接線
321...輸入
400...位置
401...位置
402...位置
403...位置
404...位置
405...位置
405A...未覆蓋位置
410...保護性材料
410-1...保護性材料之部分
410-2...保護性材料之部分
410-3...保護性材料之部分
410-4...保護性材料之部分
420...金屬層
圖1為一多層次IC裝置之示意圖,該IC裝置在其中具有一熱點;
圖2展示用於消除來自該熱點之熱量之先前技術解決方案的一實例;
圖3展示根據本發明之教示之一具有主動式溫度控制之堆疊式IC裝置的一實施例;及
圖4A至4G展示一種製造根據本發明之教示之一具有主動式冷卻能力之多層次IC裝置的方法。
11...頂部層次
12...底部層次
30...堆疊式積體電路裝置
101...基板(背部)
102...主動式電路(面部)
103...主動式電路(面部)
104...基板(背部)
110...位置/熱點
300...熱電裝置
301...P型元件
302...N型元件
303...底部導體
304...控制電路
320...接線
321...輸入
Claims (23)
- 一種堆疊式積體電路(IC)裝置,其包含:一層次,其具有主動式電路配置於其中之一主動層,及該主動層直接配置於其上之一基板層;及一熱電(TE)裝置,其係部分配置於該基板層內且部分配置於該等主動式電路配置於其中之該主動層內,該TE裝置促進介於該堆疊式IC裝置之一受熱困擾之區域與該TE裝置之間的熱流。
- 如請求項1之堆疊式IC裝置,其進一步包含至少一具有主動式電路之其他層次。
- 如請求項2之堆疊式IC裝置,其中該TE裝置建構於該等層次中之一者內,且其中該遭受困擾區域在一並非一建構有該TE裝置之層次的層次中。
- 如請求項3之堆疊式IC裝置,其進一步包含:一輸入,其用於接收用於啟用該TE裝置之選擇性控制信號。
- 如請求項3之堆疊式IC裝置,其中該TE裝置包含一帕耳帖(Peltier)裝置。
- 如請求項1之堆疊式IC裝置,其進一步包含:至少一自該TE裝置至該堆疊式IC裝置中之一主動式元件的電接線,以便允許該TE裝置將電力供應至該主動式元件,該電力係由來自該受熱困擾之區域之熱流產生。
- 一種堆疊式IC裝置,其包含:第一及第二層次,該第一及該第二層次中之每一者具 有主動式電路配置於其中之一主動層,及該主動層配置於其上之一基板層;及部分建構於該等層次之該等基板層中之至少一者中及部分建構於該等主動層中之至少一者內之的至少一P-N接面,該接面可操作以藉由關於該接面選擇性施加電流而用於至/來自該等層次中之至少一者中之一受熱困擾之位置的能量傳遞。
- 如請求項7之裝置,其中該受熱困擾之位置為由該堆疊式IC裝置中之元件產生之一熱點。
- 如請求項8之裝置,其進一步包含:一輸入,其用於接收用於啟用該P-N接面之選擇性控制信號。
- 如請求項8之裝置,其中該P-N接面包含一帕耳帖裝置。
- 如請求項7之裝置,其進一步包含:至少一自該P-N接面至該堆疊式IC裝置中之一主動式元件之電接線,以允許該P-N接面將電力供應至該主動式元件,該電力係由自該受熱困擾之位置提供之能量產生。
- 一種用於控制一IC中之不合意溫度梯度之方法,該方法包含:允許能量在該IC內之一受熱困擾之位置與一建構於該IC內之熱電(TE)裝置之間流動,造成一能流,其中該IC包括一層次,其具有一基板層及主動式電路配置於其中之一主動層,其中該主動層係直接配置於該基板層上, 且其中該TE裝置係部分配置於該基板層內且部分配置於該主動層內;及使電流能夠關於該TE裝置流動以便選擇性地控制該能流。
- 如請求項12之方法,其中該使電流能夠關於該TE裝置流動包含:在一方向中將電流提供至該TE裝置以使該TE裝置能夠自該能流移除熱量。
- 如請求項12之方法,其中該使電流能夠關於該TE裝置流動包含:在一方向中將電流提供至該TE裝置以使該TE裝置能夠將熱量輸送至該能流。
- 如請求項12之方法,其中該使電流能夠關於該TE裝置流動包含:將能量自該TE裝置移除以使該TE裝置能夠將電力輸送至該IC內之另一元件。
- 如請求項12之方法,其中該受熱困擾之位置與該TE裝置係在一多層次IC裝置之不同層次中。
- 一種移除來自一多層次IC裝置中之一熱點之熱量的方法,該方法包含:允許來自該熱點之該熱量自一層次至至少一其他層次而穿過該多層次IC裝置,其中至少一層次包括一基板層及主動式電路配置於其中之一主動層,其中該主動層係直接配置於該基板層上;及 使建構於該至少一其他層次內之一熱電(TE)裝置能夠將該熱量傳遞出該多層次IC裝置,其中該TE裝置係部分配置於該基板層內且部分配置於該主動層內。
- 如請求項17之方法,其中該使該TE裝置能夠將該熱量傳遞出該多層次IC裝置包含:在一特定方向中將電流施加至該TE裝置。
- 如請求項17之方法,其中該使該TE裝置能夠將該熱量傳遞出該多層次IC裝置包含:自該TE裝置移除能量。
- 如請求項19之方法,其進一步包含:將該所移除能量施加至至少一建構於該多層次IC裝置內之其他元件。
- 一種堆疊式IC裝置,其包含:至少兩個經接合層次,每一層次含有建構於其中之電路元件,其中至少一層次包括一基板層及主動式電路配置於其中之一主動層,其中該主動層係直接配置於該基板層上;及建構於該等層次中之至少一者內之一熱電(TE)裝置,其用於選擇性地將該等層次中之一者之一特定區域加熱/冷卻,其中該TE裝置係部分配置於該基板層內且部分配置於該主動層內。
- 如請求項21之堆疊式IC裝置,其進一步包含:一輸入,其用於接收用於控制該TE裝置之電流。
- 如請求項21之堆疊式IC裝置,其進一步包含一控制系 統,該控制系統控制該熱電裝置自該堆疊式IC裝置內之一溫度梯度產生電能。
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BRPI0914631B1 (pt) | 2020-09-29 |
ES2796653T3 (es) | 2020-11-27 |
CA2726476A1 (en) | 2009-12-30 |
JP5868879B2 (ja) | 2016-02-24 |
KR20110039293A (ko) | 2011-04-15 |
RU2479067C2 (ru) | 2013-04-10 |
RU2011102933A (ru) | 2012-08-10 |
JP2013140992A (ja) | 2013-07-18 |
TW201017862A (en) | 2010-05-01 |
JP2011526081A (ja) | 2011-09-29 |
EP2304792A1 (en) | 2011-04-06 |
WO2009158287A1 (en) | 2009-12-30 |
CN102067308A (zh) | 2011-05-18 |
CN102067308B (zh) | 2015-04-01 |
US8987062B2 (en) | 2015-03-24 |
MX2010013880A (es) | 2011-01-20 |
KR101318842B1 (ko) | 2013-10-17 |
CA2726476C (en) | 2016-05-24 |
US8598700B2 (en) | 2013-12-03 |
US20090321909A1 (en) | 2009-12-31 |
US20140043756A1 (en) | 2014-02-13 |
HUE049459T2 (hu) | 2020-09-28 |
BRPI0914631A2 (pt) | 2015-10-20 |
EP2304792B1 (en) | 2020-03-11 |
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