HUE049459T2 - Aktív hõmérsékletszabályozás halmozott IC eszközökhöz - Google Patents

Aktív hõmérsékletszabályozás halmozott IC eszközökhöz

Info

Publication number
HUE049459T2
HUE049459T2 HUE09770821A HUE09770821A HUE049459T2 HU E049459 T2 HUE049459 T2 HU E049459T2 HU E09770821 A HUE09770821 A HU E09770821A HU E09770821 A HUE09770821 A HU E09770821A HU E049459 T2 HUE049459 T2 HU E049459T2
Authority
HU
Hungary
Prior art keywords
stacked
devices
thermal control
active thermal
active
Prior art date
Application number
HUE09770821A
Other languages
English (en)
Inventor
Shiqun Gu
Matthew Nowak
Thomas R Toms
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of HUE049459T2 publication Critical patent/HUE049459T2/hu

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
HUE09770821A 2008-06-27 2009-06-19 Aktív hõmérsékletszabályozás halmozott IC eszközökhöz HUE049459T2 (hu)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/163,029 US8598700B2 (en) 2008-06-27 2008-06-27 Active thermal control for stacked IC devices

Publications (1)

Publication Number Publication Date
HUE049459T2 true HUE049459T2 (hu) 2020-09-28

Family

ID=40947576

Family Applications (1)

Application Number Title Priority Date Filing Date
HUE09770821A HUE049459T2 (hu) 2008-06-27 2009-06-19 Aktív hõmérsékletszabályozás halmozott IC eszközökhöz

Country Status (13)

Country Link
US (2) US8598700B2 (hu)
EP (1) EP2304792B1 (hu)
JP (2) JP2011526081A (hu)
KR (1) KR101318842B1 (hu)
CN (1) CN102067308B (hu)
BR (1) BRPI0914631B1 (hu)
CA (1) CA2726476C (hu)
ES (1) ES2796653T3 (hu)
HU (1) HUE049459T2 (hu)
MX (1) MX2010013880A (hu)
RU (1) RU2479067C2 (hu)
TW (1) TWI455278B (hu)
WO (1) WO2009158287A1 (hu)

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US8598700B2 (en) 2008-06-27 2013-12-03 Qualcomm Incorporated Active thermal control for stacked IC devices
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JP5347886B2 (ja) * 2009-10-05 2013-11-20 日本電気株式会社 ３次元半導体装置および３次元半導体装置の冷却方法
DE102010029526B4 (de) * 2010-05-31 2012-05-24 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Halbleiterbauelement mit einer gestapelten Chipkonfiguration mit einem integrierten Peltier-Element
US8995134B2 (en) 2011-05-27 2015-03-31 Lear Corporation Electrically-cooled power module
US20130308274A1 (en) * 2012-05-21 2013-11-21 Triquint Semiconductor, Inc. Thermal spreader having graduated thermal expansion parameters
US20130306293A1 (en) * 2012-05-21 2013-11-21 Hamilton Sundstrand Space Systems International Extruded matching set radiators
US20130308273A1 (en) * 2012-05-21 2013-11-21 Hamilton Sundstrand Space Systems International Laser sintered matching set radiators
US8879266B2 (en) * 2012-05-24 2014-11-04 Apple Inc. Thin multi-layered structures providing rigidity and conductivity
JP2014066527A (ja) * 2012-09-24 2014-04-17 National Institute Of Advanced Industrial & Technology 積層ｌｓｉの接続状態の検査方法
US20140252531A1 (en) * 2013-03-07 2014-09-11 Qualcomm Incorporated Systems and methods for harvesting dissipated heat from integrated circuits (ics) in electronic devices into electrical energy for providing power for the electronic devices
JP2015023235A (ja) 2013-07-23 2015-02-02 株式会社東芝 半導体装置及びその製造方法
US10468330B2 (en) 2013-12-12 2019-11-05 Samsung Electronics Co., Ltd. Semiconductor chip and electronic system including the same
MA40285A (fr) 2014-06-02 2017-04-05 Hat Teknoloji A S Configuration de cellule tridimensionnelle intégrée, réseau de refroidissement intégré et circuit intégré précaractérisé
KR102334301B1 (ko) * 2014-07-24 2021-12-02 삼성전자주식회사 열전 소자, 이의 제조 방법 및 이를 포함하는 반도체 장치
US9913405B2 (en) 2015-03-25 2018-03-06 Globalfoundries Inc. Glass interposer with embedded thermoelectric devices
US9941458B2 (en) 2015-03-30 2018-04-10 International Business Machines Corporation Integrated circuit cooling using embedded peltier micro-vias in substrate
US9559283B2 (en) 2015-03-30 2017-01-31 International Business Machines Corporation Integrated circuit cooling using embedded peltier micro-vias in substrate
US9746889B2 (en) * 2015-05-11 2017-08-29 Qualcomm Incorporated Package-on-package (PoP) device comprising bi-directional thermal electric cooler
RU2610302C2 (ru) * 2015-07-07 2017-02-09 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Марийский государственный университет" Способ формирования межслойных переходов в многослойной металлокерамической плате
CN105870083B (zh) * 2016-05-31 2019-01-18 福州大学 采用微热电发电机的3d芯片及其实现方法
US9773717B1 (en) 2016-08-22 2017-09-26 Globalfoundries Inc. Integrated circuits with peltier cooling provided by back-end wiring
US11435766B2 (en) * 2018-09-07 2022-09-06 Maxwell Labs Inc Fine-grain dynamic solid-state cooling system

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Also Published As

Publication number Publication date
BRPI0914631A2 (pt) 2015-10-20
MX2010013880A (es) 2011-01-20
CA2726476A1 (en) 2009-12-30
US20090321909A1 (en) 2009-12-31
ES2796653T3 (es) 2020-11-27
CN102067308B (zh) 2015-04-01
WO2009158287A1 (en) 2009-12-30
TWI455278B (zh) 2014-10-01
RU2011102933A (ru) 2012-08-10
US8598700B2 (en) 2013-12-03
BRPI0914631B1 (pt) 2020-09-29
JP2011526081A (ja) 2011-09-29
US8987062B2 (en) 2015-03-24
TW201017862A (en) 2010-05-01
CN102067308A (zh) 2011-05-18
EP2304792B1 (en) 2020-03-11
KR20110039293A (ko) 2011-04-15
JP2013140992A (ja) 2013-07-18
CA2726476C (en) 2016-05-24
RU2479067C2 (ru) 2013-04-10
KR101318842B1 (ko) 2013-10-17
EP2304792A1 (en) 2011-04-06
JP5868879B2 (ja) 2016-02-24
US20140043756A1 (en) 2014-02-13

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