KR101255675B1 - 3-ｄ 집적 회로 측면 열 방산 - Google Patents

3-ｄ 집적 회로 측면 열 방산 Download PDF

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Publication number
KR101255675B1
KR101255675B1 KR1020107027421A KR20107027421A KR101255675B1 KR 101255675 B1 KR101255675 B1 KR 101255675B1 KR 1020107027421 A KR1020107027421 A KR 1020107027421A KR 20107027421 A KR20107027421 A KR 20107027421A KR 101255675 B1 KR101255675 B1 KR 101255675B1
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die
integrated circuit
thermally conductive
conductive material
dies
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Korean (ko)
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KR20110004475A (ko
Inventor
케네쓰 카스코운
시쿤 구
매튜 엠. 노와크
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020107027421A 2008-05-05 2009-04-27 3-ｄ 집적 회로 측면 열 방산 Active KR101255675B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/115,076 2008-05-05
US12/115,076 US8502373B2 (en) 2008-05-05 2008-05-05 3-D integrated circuit lateral heat dissipation
PCT/US2009/041780 WO2009137286A1 (en) 2008-05-05 2009-04-27 3-d integrated circuit lateral heat dissipation

Publications (2)

Publication Number Publication Date
KR20110004475A KR20110004475A (ko) 2011-01-13
KR101255675B1 true KR101255675B1 (ko) 2013-04-17

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KR1020107027421A Active KR101255675B1 (ko) 2008-05-05 2009-04-27 3-ｄ 집적 회로 측면 열 방산

Country Status (11)

Country Link
US (1) US8502373B2 (https=)
EP (1) EP2286452A1 (https=)
JP (3) JP2011520286A (https=)
KR (1) KR101255675B1 (https=)
CN (2) CN102017139B (https=)
BR (1) BRPI0912376A2 (https=)
CA (1) CA2720966C (https=)
MX (1) MX2010011848A (https=)
RU (2) RU2502154C1 (https=)
TW (1) TWI496269B (https=)
WO (1) WO2009137286A1 (https=)

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US8405203B2 (en) 2010-09-10 2013-03-26 Cisco Technology, Inc. Semiconductor package with integrated substrate thermal slug
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US9704793B2 (en) 2011-01-04 2017-07-11 Napra Co., Ltd. Substrate for electronic device and electronic device
JP5250707B2 (ja) * 2011-05-26 2013-07-31 有限会社 ナプラ 電子機器用基板及び電子機器
US8367478B2 (en) 2011-06-02 2013-02-05 International Business Machines Corporation Method and system for internal layer-layer thermal enhancement
US8531032B2 (en) 2011-09-02 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Thermally enhanced structure for multi-chip device
FR2999017A1 (fr) * 2012-12-03 2014-06-06 St Microelectronics Sa Structure integree tridimensionnelle a dissipation thermique amelioree
TWI509758B (zh) 2012-12-26 2015-11-21 國立交通大學 三維積體電路
US10403601B2 (en) * 2016-06-17 2019-09-03 Fairchild Semiconductor Corporation Semiconductor package and related methods
US10256188B2 (en) 2016-11-26 2019-04-09 Texas Instruments Incorporated Interconnect via with grown graphitic material
US10811334B2 (en) 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
US11004680B2 (en) 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
US11676880B2 (en) 2016-11-26 2023-06-13 Texas Instruments Incorporated High thermal conductivity vias by additive processing
US10529641B2 (en) 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US11276667B2 (en) 2016-12-31 2022-03-15 Intel Corporation Heat removal between top and bottom die interface
US10163864B1 (en) * 2017-08-16 2018-12-25 Globalfoundries Inc. Vertically stacked wafers and methods of forming same
US10566313B1 (en) 2018-08-21 2020-02-18 International Business Machines Corporation Integrated circuit chip carrier with in-plane thermal conductance layer
US10643957B2 (en) 2018-08-27 2020-05-05 Nxp B.V. Conformal dummy die
US10854530B1 (en) 2019-07-31 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Heat dissipation structures
US11211364B1 (en) * 2020-06-24 2021-12-28 Micron Technology, Inc. Semiconductor device assemblies and systems with improved thermal performance and methods for making the same
CN114334854A (zh) * 2020-09-30 2022-04-12 华为技术有限公司 芯片及其制造方法、电子设备

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Publication number Publication date
CN102017139B (zh) 2013-05-08
US20090273068A1 (en) 2009-11-05
KR20110004475A (ko) 2011-01-13
CA2720966A1 (en) 2009-11-12
JP5788379B2 (ja) 2015-09-30
MX2010011848A (es) 2010-11-30
RU2459315C1 (ru) 2012-08-20
JP2015167259A (ja) 2015-09-24
BRPI0912376A2 (en) 2018-02-27
JP2013077837A (ja) 2013-04-25
RU2502154C1 (ru) 2013-12-20
RU2012118036A (ru) 2013-11-10
US8502373B2 (en) 2013-08-06
EP2286452A1 (en) 2011-02-23
CN103219328A (zh) 2013-07-24
CA2720966C (en) 2015-06-30
TW201005917A (en) 2010-02-01
TWI496269B (zh) 2015-08-11
RU2010149596A (ru) 2012-06-20
JP2011520286A (ja) 2011-07-14
CN102017139A (zh) 2011-04-13
CN103219328B (zh) 2017-04-12
WO2009137286A1 (en) 2009-11-12

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