BRPI0912376A2 - 3-d integrated circuit side heat dissipation - Google Patents

3-d integrated circuit side heat dissipation

Info

Publication number
BRPI0912376A2
BRPI0912376A2 BRPI0912376-8A BRPI0912376A BRPI0912376A2 BR PI0912376 A2 BRPI0912376 A2 BR PI0912376A2 BR PI0912376 A BRPI0912376 A BR PI0912376A BR PI0912376 A2 BRPI0912376 A2 BR PI0912376A2
Authority
BR
Brazil
Prior art keywords
conductive material
thermally conductive
conductor
semi
tiers
Prior art date
Application number
BRPI0912376-8A
Other languages
English (en)
Portuguese (pt)
Inventor
Kaskoun Kenneth
Gu Shiqun
M. Nowak Matthew
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BRPI0912376A2 publication Critical patent/BRPI0912376A2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
BRPI0912376-8A 2008-05-05 2009-04-27 3-d integrated circuit side heat dissipation BRPI0912376A2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/115,076 2008-05-05
US12/115,076 US8502373B2 (en) 2008-05-05 2008-05-05 3-D integrated circuit lateral heat dissipation
PCT/US2009/041780 WO2009137286A1 (en) 2008-05-05 2009-04-27 3-d integrated circuit lateral heat dissipation

Publications (1)

Publication Number Publication Date
BRPI0912376A2 true BRPI0912376A2 (en) 2018-02-27

Family

ID=40941689

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0912376-8A BRPI0912376A2 (en) 2008-05-05 2009-04-27 3-d integrated circuit side heat dissipation

Country Status (11)

Country Link
US (1) US8502373B2 (https=)
EP (1) EP2286452A1 (https=)
JP (3) JP2011520286A (https=)
KR (1) KR101255675B1 (https=)
CN (2) CN102017139B (https=)
BR (1) BRPI0912376A2 (https=)
CA (1) CA2720966C (https=)
MX (1) MX2010011848A (https=)
RU (2) RU2502154C1 (https=)
TW (1) TWI496269B (https=)
WO (1) WO2009137286A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232137B2 (en) * 2009-12-10 2012-07-31 Intersil Americas Inc. Heat conduction for chip stacks and 3-D circuits
KR20110088234A (ko) * 2010-01-28 2011-08-03 삼성전자주식회사 적층 반도체 패키지의 제조 방법
US8405203B2 (en) 2010-09-10 2013-03-26 Cisco Technology, Inc. Semiconductor package with integrated substrate thermal slug
US8193039B2 (en) * 2010-09-24 2012-06-05 Advanced Micro Devices, Inc. Semiconductor chip with reinforcing through-silicon-vias
US9704793B2 (en) 2011-01-04 2017-07-11 Napra Co., Ltd. Substrate for electronic device and electronic device
JP5250707B2 (ja) * 2011-05-26 2013-07-31 有限会社 ナプラ 電子機器用基板及び電子機器
US8367478B2 (en) 2011-06-02 2013-02-05 International Business Machines Corporation Method and system for internal layer-layer thermal enhancement
US8531032B2 (en) 2011-09-02 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Thermally enhanced structure for multi-chip device
FR2999017A1 (fr) * 2012-12-03 2014-06-06 St Microelectronics Sa Structure integree tridimensionnelle a dissipation thermique amelioree
TWI509758B (zh) 2012-12-26 2015-11-21 國立交通大學 三維積體電路
US10403601B2 (en) * 2016-06-17 2019-09-03 Fairchild Semiconductor Corporation Semiconductor package and related methods
US10256188B2 (en) 2016-11-26 2019-04-09 Texas Instruments Incorporated Interconnect via with grown graphitic material
US10811334B2 (en) 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
US11004680B2 (en) 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
US11676880B2 (en) 2016-11-26 2023-06-13 Texas Instruments Incorporated High thermal conductivity vias by additive processing
US10529641B2 (en) 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US11276667B2 (en) 2016-12-31 2022-03-15 Intel Corporation Heat removal between top and bottom die interface
US10163864B1 (en) * 2017-08-16 2018-12-25 Globalfoundries Inc. Vertically stacked wafers and methods of forming same
US10566313B1 (en) 2018-08-21 2020-02-18 International Business Machines Corporation Integrated circuit chip carrier with in-plane thermal conductance layer
US10643957B2 (en) 2018-08-27 2020-05-05 Nxp B.V. Conformal dummy die
US10854530B1 (en) 2019-07-31 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Heat dissipation structures
US11211364B1 (en) * 2020-06-24 2021-12-28 Micron Technology, Inc. Semiconductor device assemblies and systems with improved thermal performance and methods for making the same
CN114334854A (zh) * 2020-09-30 2022-04-12 华为技术有限公司 芯片及其制造方法、电子设备

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3675321D1 (de) * 1985-08-16 1990-12-06 Dai Ichi Seiko Co Ltd Halbleiteranordnung mit packung vom steckerstifttyp.
JPS62194652A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置
US4731701A (en) * 1987-05-12 1988-03-15 Fairchild Semiconductor Corporation Integrated circuit package with thermal path layers incorporating staggered thermal vias
JPS63293931A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd 半導体装置およびその製造方法
US5050039A (en) * 1990-06-26 1991-09-17 Digital Equipment Corporation Multiple circuit chip mounting and cooling arrangement
US5414299A (en) * 1993-09-24 1995-05-09 Vlsi Technology, Inc. Semi-conductor device interconnect package assembly for improved package performance
WO1996001497A1 (de) * 1994-07-05 1996-01-18 Siemens Aktiengesellschaft Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung
US5532512A (en) * 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
JP2905736B2 (ja) * 1995-12-18 1999-06-14 株式会社エイ・ティ・アール光電波通信研究所 半導体装置
US20020089016A1 (en) * 1998-07-10 2002-07-11 Jean-Pierre Joly Thin layer semi-conductor structure comprising a heat distribution layer
JP2000040382A (ja) 1998-07-23 2000-02-08 Sony Corp 不揮発性半導体記憶装置およびそのデータ書き込み方法
US6573538B2 (en) * 1998-11-12 2003-06-03 International Business Machines Corporation Semiconductor device with internal heat dissipation
KR20000011896U (ko) * 1998-12-10 2000-07-05 윤종용 반도체 디바이스의 방열을 위한 히트 싱크 구조
TW413874B (en) * 1999-04-12 2000-12-01 Siliconware Precision Industries Co Ltd BGA semiconductor package having exposed heat dissipation layer and its manufacturing method
US6278181B1 (en) * 1999-06-28 2001-08-21 Advanced Micro Devices, Inc. Stacked multi-chip modules using C4 interconnect technology having improved thermal management
JP3570672B2 (ja) 1999-11-04 2004-09-29 ローム株式会社 半導体装置
US6720662B1 (en) * 1999-11-04 2004-04-13 Rohm Co., Ltd. Semiconductor device of chip-on-chip structure with a radiation noise shield
US6337513B1 (en) * 1999-11-30 2002-01-08 International Business Machines Corporation Chip packaging system and method using deposited diamond film
US6333557B1 (en) * 2000-09-12 2001-12-25 International Business Machines Corporation Semiconductor chip structures with embedded thermal conductors
US6512292B1 (en) * 2000-09-12 2003-01-28 International Business Machines Corporation Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces
US6507115B2 (en) * 2000-12-14 2003-01-14 International Business Machines Corporation Multi-chip integrated circuit module
US6519154B1 (en) * 2001-08-17 2003-02-11 Intel Corporation Thermal bus design to cool a microelectronic die
JP4416376B2 (ja) * 2002-05-13 2010-02-17 富士通株式会社 半導体装置及びその製造方法
US7138711B2 (en) * 2002-06-17 2006-11-21 Micron Technology, Inc. Intrinsic thermal enhancement for FBGA package
JP2004200347A (ja) * 2002-12-18 2004-07-15 Sumitomo Electric Ind Ltd 高放熱性能を持つ発光ダイオード
US6753600B1 (en) * 2003-01-28 2004-06-22 Thin Film Module, Inc. Structure of a substrate for a high density semiconductor package
US7180745B2 (en) * 2003-10-10 2007-02-20 Delphi Technologies, Inc. Flip chip heat sink package and method
US7205651B2 (en) * 2004-04-16 2007-04-17 St Assembly Test Services Ltd. Thermally enhanced stacked die package and fabrication method
US20060025515A1 (en) * 2004-07-27 2006-02-02 Mainstream Engineering Corp. Nanotube composites and methods for producing
CN100377340C (zh) * 2004-08-11 2008-03-26 鸿富锦精密工业（深圳）有限公司 散热模组及其制备方法
JP2006120976A (ja) * 2004-10-25 2006-05-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US7416789B2 (en) * 2004-11-01 2008-08-26 H.C. Starck Inc. Refractory metal substrate with improved thermal conductivity
US20060145356A1 (en) * 2005-01-06 2006-07-06 International Business Machines Corporation On-chip cooling
RU2299497C2 (ru) 2005-05-06 2007-05-20 Геннадий Андреевич Блинов Способ изготовления трехмерного многокристального микромодуля
US20070235847A1 (en) * 2005-09-19 2007-10-11 Shriram Ramanathan Method of making a substrate having thermally conductive structures and resulting devices
US7528494B2 (en) * 2005-11-03 2009-05-05 International Business Machines Corporation Accessible chip stack and process of manufacturing thereof
US7514116B2 (en) * 2005-12-30 2009-04-07 Intel Corporation Horizontal Carbon Nanotubes by Vertical Growth and Rolling
JP2007221078A (ja) 2006-02-20 2007-08-30 Denso Corp 半導体装置
US7414316B2 (en) * 2006-03-01 2008-08-19 Freescale Semiconductor, Inc. Methods and apparatus for thermal isolation in vertically-integrated semiconductor devices
US7738249B2 (en) * 2007-10-25 2010-06-15 Endicott Interconnect Technologies, Inc. Circuitized substrate with internal cooling structure and electrical assembly utilizing same
US8497587B2 (en) * 2009-12-30 2013-07-30 Stmicroelectronics Pte Ltd. Thermally enhanced expanded wafer level package ball grid array structure and method of making the same

Also Published As

Publication number Publication date
CN102017139B (zh) 2013-05-08
US20090273068A1 (en) 2009-11-05
KR20110004475A (ko) 2011-01-13
CA2720966A1 (en) 2009-11-12
JP5788379B2 (ja) 2015-09-30
MX2010011848A (es) 2010-11-30
RU2459315C1 (ru) 2012-08-20
JP2015167259A (ja) 2015-09-24
JP2013077837A (ja) 2013-04-25
RU2502154C1 (ru) 2013-12-20
RU2012118036A (ru) 2013-11-10
US8502373B2 (en) 2013-08-06
EP2286452A1 (en) 2011-02-23
CN103219328A (zh) 2013-07-24
CA2720966C (en) 2015-06-30
TW201005917A (en) 2010-02-01
TWI496269B (zh) 2015-08-11
RU2010149596A (ru) 2012-06-20
JP2011520286A (ja) 2011-07-14
CN102017139A (zh) 2011-04-13
KR101255675B1 (ko) 2013-04-17
CN103219328B (zh) 2017-04-12
WO2009137286A1 (en) 2009-11-12

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Legal Events

Date Code Title Description
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

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