RU2015104112A - Композиции для обработки, предотвращающие коллапс рисунка элементов схемы, включающие димерные добавки - Google Patents

Композиции для обработки, предотвращающие коллапс рисунка элементов схемы, включающие димерные добавки Download PDF

Info

Publication number
RU2015104112A
RU2015104112A RU2015104112A RU2015104112A RU2015104112A RU 2015104112 A RU2015104112 A RU 2015104112A RU 2015104112 A RU2015104112 A RU 2015104112A RU 2015104112 A RU2015104112 A RU 2015104112A RU 2015104112 A RU2015104112 A RU 2015104112A
Authority
RU
Russia
Prior art keywords
linear
branched
optionally
photoresist
circuit elements
Prior art date
Application number
RU2015104112A
Other languages
English (en)
Russian (ru)
Inventor
Андреас КЛИПП
Андрей ХОНСИУК
Гюнтер ЕТТЕР
Кристиан Биттнер
Original Assignee
Басф Се
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Басф Се filed Critical Басф Се
Publication of RU2015104112A publication Critical patent/RU2015104112A/ru

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/008—Polymeric surface-active agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/40—Monoamines or polyamines; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Detergent Compositions (AREA)
RU2015104112A 2012-07-10 2013-07-01 Композиции для обработки, предотвращающие коллапс рисунка элементов схемы, включающие димерные добавки RU2015104112A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261669686P 2012-07-10 2012-07-10
US61/669686 2012-07-10
PCT/IB2013/055392 WO2014009847A1 (en) 2012-07-10 2013-07-01 Compositions for anti pattern collapse treatment comprising gemini additives

Publications (1)

Publication Number Publication Date
RU2015104112A true RU2015104112A (ru) 2016-08-27

Family

ID=49915473

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015104112A RU2015104112A (ru) 2012-07-10 2013-07-01 Композиции для обработки, предотвращающие коллапс рисунка элементов схемы, включающие димерные добавки

Country Status (11)

Country Link
US (1) US10385295B2 (enExample)
EP (2) EP2872948B1 (enExample)
JP (1) JP6324955B2 (enExample)
KR (1) KR102107367B1 (enExample)
CN (1) CN104428716B (enExample)
IL (1) IL236408B (enExample)
MY (1) MY184912A (enExample)
RU (1) RU2015104112A (enExample)
SG (1) SG11201500098XA (enExample)
TW (1) TWI611274B (enExample)
WO (1) WO2014009847A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015168680A (ja) * 2014-03-11 2015-09-28 東ソー株式会社 ジェミニ型界面活性剤
JP6325464B2 (ja) * 2015-01-05 2018-05-16 信越化学工業株式会社 現像液及びこれを用いたパターン形成方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
CN111386332B (zh) * 2017-11-28 2025-05-23 巴斯夫欧洲公司 用于清洁或清洗产品的包含一级和二级表面活性剂的组合物
JP7498544B2 (ja) * 2018-05-08 2024-06-12 日本化薬株式会社 洗浄液及びインクジェットプリンタの洗浄方法
EP4179057A1 (en) * 2020-07-09 2023-05-17 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
JP2023070641A (ja) * 2021-11-09 2023-05-19 信越化学工業株式会社 半導体基板パターン倒壊抑制用充填膜形成材料及び半導体基板の処理方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4027494B2 (ja) * 1998-04-07 2007-12-26 花王株式会社 リンス剤組成物
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
TW558736B (en) 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
KR20030012692A (ko) * 2001-08-03 2003-02-12 주식회사 엘지생활건강 계면활성제 시스템
CN1564861A (zh) * 2001-08-03 2005-01-12 Lg生活健康株式会社 复合表面活性剂体系
US6641986B1 (en) 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
US7700257B2 (en) * 2003-03-28 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and resist pattern formation method by the use thereof
US20040259371A1 (en) * 2003-06-18 2004-12-23 Zhijian Lu Reduction of resist defects
EP1553454A2 (en) 2003-12-22 2005-07-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
KR100574349B1 (ko) * 2004-02-03 2006-04-27 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
CN101236357B (zh) * 2007-01-30 2012-07-04 住友化学株式会社 化学放大型抗蚀剂组合物
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
JP2009237168A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
JP2009237169A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
CN101766973B (zh) * 2009-01-07 2012-06-13 湖北大学 一种对称型阳离子表面活性剂及其制备方法
JP5624753B2 (ja) 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
MY161218A (en) 2011-01-25 2017-04-14 Basf Se Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
CN103430102B (zh) 2011-03-18 2017-02-08 巴斯夫欧洲公司 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法
MY181266A (en) * 2012-12-14 2020-12-21 Basf Se Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Also Published As

Publication number Publication date
JP6324955B2 (ja) 2018-05-16
KR20150036461A (ko) 2015-04-07
TWI611274B (zh) 2018-01-11
WO2014009847A1 (en) 2014-01-16
SG11201500098XA (en) 2015-02-27
EP3299891B1 (en) 2019-05-15
EP2872948A4 (en) 2016-11-02
US10385295B2 (en) 2019-08-20
CN104428716B (zh) 2019-06-14
MY184912A (en) 2021-04-30
EP2872948A1 (en) 2015-05-20
CN104428716A (zh) 2015-03-18
EP3299891A1 (en) 2018-03-28
JP2015529840A (ja) 2015-10-08
KR102107367B1 (ko) 2020-05-07
TW201418910A (zh) 2014-05-16
IL236408A0 (en) 2015-02-26
US20150159123A1 (en) 2015-06-11
IL236408B (en) 2020-03-31
EP2872948B1 (en) 2017-10-11

Similar Documents

Publication Publication Date Title
RU2015104112A (ru) Композиции для обработки, предотвращающие коллапс рисунка элементов схемы, включающие димерные добавки
JP2015529840A5 (enExample)
JP6118732B2 (ja) 線間間隔が５０ｎｍ未満であるパターンを有する集積回路を製造するための３個以上の短鎖全フッ素化基Ｒｆを有する界面活性剤の使用方法。
JP2014508318A5 (enExample)
CN106062637B (zh) 用于移除光刻胶的剥离剂组合物以及使用其剥离光刻胶的方法
JP6063879B2 (ja) 集積回路デバイス、光デバイス、マイクロマシン及び線幅５０ｎｍ以下のパターニングされた材料層を有する機械的精密デバイスの製造方法
JP6175547B2 (ja) フォトリソグラフィー用洗浄液組成物及びこれを用いたフォトレジストパターンの形成方法
RU2011149552A (ru) Композиции для удаления резиста и способы изготовления электрических устройств
RU2011149551A (ru) Композиции для удаления резиста и способы изготовления электрических устройств
KR102107370B1 (ko) 집적 회로 기기, 광학 기기, 초소형 기계 장비 및 정밀 기계 장비 제조용 조성물
KR20200084045A (ko) 제품을 세정하거나 또는 헹구기 위한, 1 차 및 2 차 계면활성제를 포함하는 조성물
JP2015524577A5 (enExample)
TW202206943A (zh) 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法及電子元件的製造方法
CN111566567B (zh) 树脂掩膜剥离用清洗剂组合物
KR20080009970A (ko) 포토레지스트 현상액 및 이를 이용한 포토레지스트 패턴형성 방법
TW202215172A (zh) 基板之洗淨方法
TW202129438A (zh) 用於移除光阻的剝離劑組合物及使用其的光阻剝離方法
KR20180038396A (ko) 레지스트 패턴의 러프니스를 저감시키기 위해서 사용되는 피복제, 및 러프니스가 저감된 레지스트 패턴의 제조 방법
KR20080064458A (ko) 반도체 소자의 패턴 형성방법

Legal Events

Date Code Title Description
FA92 Acknowledgement of application withdrawn (lack of supplementary materials submitted)

Effective date: 20171018