TWI611274B - 用於抗圖案崩壞處理之包含雙子型添加劑之組成物 - Google Patents

用於抗圖案崩壞處理之包含雙子型添加劑之組成物 Download PDF

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Publication number
TWI611274B
TWI611274B TW102124316A TW102124316A TWI611274B TW I611274 B TWI611274 B TW I611274B TW 102124316 A TW102124316 A TW 102124316A TW 102124316 A TW102124316 A TW 102124316A TW I611274 B TWI611274 B TW I611274B
Authority
TW
Taiwan
Prior art keywords
branched
alkyl
photoresist
straight
integer
Prior art date
Application number
TW102124316A
Other languages
English (en)
Chinese (zh)
Other versions
TW201418910A (zh
Inventor
安卓亞斯 克里普
Andreas Klipp
安德烈 弘奇烏
Andrei HONCIUC
君特 歐特
Guenter Oetter
克里斯汀 畢特納
Christian Bittner
Original Assignee
巴斯夫歐洲公司
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴斯夫歐洲公司, Basf Se filed Critical 巴斯夫歐洲公司
Publication of TW201418910A publication Critical patent/TW201418910A/zh
Application granted granted Critical
Publication of TWI611274B publication Critical patent/TWI611274B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/008—Polymeric surface-active agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/40—Monoamines or polyamines; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Detergent Compositions (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW102124316A 2012-07-10 2013-07-08 用於抗圖案崩壞處理之包含雙子型添加劑之組成物 TWI611274B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261669686P 2012-07-10 2012-07-10
US61/669,686 2012-07-10

Publications (2)

Publication Number Publication Date
TW201418910A TW201418910A (zh) 2014-05-16
TWI611274B true TWI611274B (zh) 2018-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102124316A TWI611274B (zh) 2012-07-10 2013-07-08 用於抗圖案崩壞處理之包含雙子型添加劑之組成物

Country Status (11)

Country Link
US (1) US10385295B2 (enExample)
EP (2) EP3299891B1 (enExample)
JP (1) JP6324955B2 (enExample)
KR (1) KR102107367B1 (enExample)
CN (1) CN104428716B (enExample)
IL (1) IL236408B (enExample)
MY (1) MY184912A (enExample)
RU (1) RU2015104112A (enExample)
SG (1) SG11201500098XA (enExample)
TW (1) TWI611274B (enExample)
WO (1) WO2014009847A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP2015168680A (ja) * 2014-03-11 2015-09-28 東ソー株式会社 ジェミニ型界面活性剤
JP6325464B2 (ja) * 2015-01-05 2018-05-16 信越化学工業株式会社 現像液及びこれを用いたパターン形成方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
CN111386332B (zh) * 2017-11-28 2025-05-23 巴斯夫欧洲公司 用于清洁或清洗产品的包含一级和二级表面活性剂的组合物
JP7498544B2 (ja) * 2018-05-08 2024-06-12 日本化薬株式会社 洗浄液及びインクジェットプリンタの洗浄方法
CN115943199A (zh) * 2020-07-09 2023-04-07 巴斯夫欧洲公司 用于在处理线间距尺寸为50nm或更低的图案化材料时避免图案坍塌的包含硅氧烷和烷烃的组合物
JP7802644B2 (ja) * 2021-11-09 2026-01-20 信越化学工業株式会社 半導体基板パターン倒壊抑制用充填膜形成材料及び半導体基板の処理方法
US12645145B2 (en) * 2023-04-14 2026-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Additive for lithography

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EP1389746A2 (en) * 2002-08-12 2004-02-18 Air Products And Chemicals, Inc. Process solutions containing surfactants
US20040259371A1 (en) * 2003-06-18 2004-12-23 Zhijian Lu Reduction of resist defects
JP2009237168A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
JP2009237169A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法

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KR20030012692A (ko) * 2001-08-03 2003-02-12 주식회사 엘지생활건강 계면활성제 시스템
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US7700257B2 (en) * 2003-03-28 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and resist pattern formation method by the use thereof
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CN101766973B (zh) * 2009-01-07 2012-06-13 湖北大学 一种对称型阳离子表面活性剂及其制备方法
JP5624753B2 (ja) 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
US9236256B2 (en) 2011-01-25 2016-01-12 Basf Se Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
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EP1389746A2 (en) * 2002-08-12 2004-02-18 Air Products And Chemicals, Inc. Process solutions containing surfactants
US20040259371A1 (en) * 2003-06-18 2004-12-23 Zhijian Lu Reduction of resist defects
JP2009237168A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
JP2009237169A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法

Also Published As

Publication number Publication date
JP6324955B2 (ja) 2018-05-16
KR20150036461A (ko) 2015-04-07
TW201418910A (zh) 2014-05-16
CN104428716B (zh) 2019-06-14
RU2015104112A (ru) 2016-08-27
EP3299891B1 (en) 2019-05-15
EP2872948B1 (en) 2017-10-11
EP3299891A1 (en) 2018-03-28
CN104428716A (zh) 2015-03-18
EP2872948A4 (en) 2016-11-02
JP2015529840A (ja) 2015-10-08
IL236408A0 (en) 2015-02-26
SG11201500098XA (en) 2015-02-27
US10385295B2 (en) 2019-08-20
KR102107367B1 (ko) 2020-05-07
EP2872948A1 (en) 2015-05-20
MY184912A (en) 2021-04-30
US20150159123A1 (en) 2015-06-11
IL236408B (en) 2020-03-31
WO2014009847A1 (en) 2014-01-16

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