KR102107367B1 - 제미니 첨가제를 포함하는 항 패턴 붕괴 처리용 조성물 - Google Patents

제미니 첨가제를 포함하는 항 패턴 붕괴 처리용 조성물 Download PDF

Info

Publication number
KR102107367B1
KR102107367B1 KR1020157003355A KR20157003355A KR102107367B1 KR 102107367 B1 KR102107367 B1 KR 102107367B1 KR 1020157003355 A KR1020157003355 A KR 1020157003355A KR 20157003355 A KR20157003355 A KR 20157003355A KR 102107367 B1 KR102107367 B1 KR 102107367B1
Authority
KR
South Korea
Prior art keywords
branched
linear
alkyl
photoresist
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157003355A
Other languages
English (en)
Korean (ko)
Other versions
KR20150036461A (ko
Inventor
안드레아스 클리프
안드레이 혼치우크
귄터 외터
크리슈티안 비트너
Original Assignee
바스프 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20150036461A publication Critical patent/KR20150036461A/ko
Application granted granted Critical
Publication of KR102107367B1 publication Critical patent/KR102107367B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/008—Polymeric surface-active agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/40—Monoamines or polyamines; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Detergent Compositions (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020157003355A 2012-07-10 2013-07-01 제미니 첨가제를 포함하는 항 패턴 붕괴 처리용 조성물 Active KR102107367B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261669686P 2012-07-10 2012-07-10
US61/669,686 2012-07-10
PCT/IB2013/055392 WO2014009847A1 (en) 2012-07-10 2013-07-01 Compositions for anti pattern collapse treatment comprising gemini additives

Publications (2)

Publication Number Publication Date
KR20150036461A KR20150036461A (ko) 2015-04-07
KR102107367B1 true KR102107367B1 (ko) 2020-05-07

Family

ID=49915473

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157003355A Active KR102107367B1 (ko) 2012-07-10 2013-07-01 제미니 첨가제를 포함하는 항 패턴 붕괴 처리용 조성물

Country Status (11)

Country Link
US (1) US10385295B2 (enExample)
EP (2) EP3299891B1 (enExample)
JP (1) JP6324955B2 (enExample)
KR (1) KR102107367B1 (enExample)
CN (1) CN104428716B (enExample)
IL (1) IL236408B (enExample)
MY (1) MY184912A (enExample)
RU (1) RU2015104112A (enExample)
SG (1) SG11201500098XA (enExample)
TW (1) TWI611274B (enExample)
WO (1) WO2014009847A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015168680A (ja) * 2014-03-11 2015-09-28 東ソー株式会社 ジェミニ型界面活性剤
JP6325464B2 (ja) * 2015-01-05 2018-05-16 信越化学工業株式会社 現像液及びこれを用いたパターン形成方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
CN111386332B (zh) * 2017-11-28 2025-05-23 巴斯夫欧洲公司 用于清洁或清洗产品的包含一级和二级表面活性剂的组合物
JP7498544B2 (ja) * 2018-05-08 2024-06-12 日本化薬株式会社 洗浄液及びインクジェットプリンタの洗浄方法
CN115943199A (zh) * 2020-07-09 2023-04-07 巴斯夫欧洲公司 用于在处理线间距尺寸为50nm或更低的图案化材料时避免图案坍塌的包含硅氧烷和烷烃的组合物
JP7802644B2 (ja) * 2021-11-09 2026-01-20 信越化学工業株式会社 半導体基板パターン倒壊抑制用充填膜形成材料及び半導体基板の処理方法
US12645145B2 (en) * 2023-04-14 2026-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Additive for lithography

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009237169A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4027494B2 (ja) * 1998-04-07 2007-12-26 花王株式会社 リンス剤組成物
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
TW558736B (en) 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
KR20030012692A (ko) * 2001-08-03 2003-02-12 주식회사 엘지생활건강 계면활성제 시스템
CN1564861A (zh) * 2001-08-03 2005-01-12 Lg生活健康株式会社 复合表面活性剂体系
US6641986B1 (en) 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
US7700257B2 (en) * 2003-03-28 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and resist pattern formation method by the use thereof
US20040259371A1 (en) * 2003-06-18 2004-12-23 Zhijian Lu Reduction of resist defects
US20050158672A1 (en) 2003-12-22 2005-07-21 Matsushita Electric Industrial Co., Ltd. Pattern formation method
KR100574349B1 (ko) * 2004-02-03 2006-04-27 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
CN101236357B (zh) * 2007-01-30 2012-07-04 住友化学株式会社 化学放大型抗蚀剂组合物
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
JP2009237168A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
CN101766973B (zh) * 2009-01-07 2012-06-13 湖北大学 一种对称型阳离子表面活性剂及其制备方法
JP5624753B2 (ja) 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
US9236256B2 (en) 2011-01-25 2016-01-12 Basf Se Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
RU2015128132A (ru) * 2012-12-14 2017-01-18 Басф Се Применение композиций, содержащих поверхностно-активное вещество и средство придания гидрофобности, для предохранения рельефа от разрушения при обработке рельефных материалов с линейными размерами, равными 50 нм или менее

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009237169A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法

Also Published As

Publication number Publication date
JP6324955B2 (ja) 2018-05-16
KR20150036461A (ko) 2015-04-07
TW201418910A (zh) 2014-05-16
CN104428716B (zh) 2019-06-14
RU2015104112A (ru) 2016-08-27
EP3299891B1 (en) 2019-05-15
EP2872948B1 (en) 2017-10-11
TWI611274B (zh) 2018-01-11
EP3299891A1 (en) 2018-03-28
CN104428716A (zh) 2015-03-18
EP2872948A4 (en) 2016-11-02
JP2015529840A (ja) 2015-10-08
IL236408A0 (en) 2015-02-26
SG11201500098XA (en) 2015-02-27
US10385295B2 (en) 2019-08-20
EP2872948A1 (en) 2015-05-20
MY184912A (en) 2021-04-30
US20150159123A1 (en) 2015-06-11
IL236408B (en) 2020-03-31
WO2014009847A1 (en) 2014-01-16

Similar Documents

Publication Publication Date Title
JP6324955B2 (ja) ジェミニ添加剤を含む抗パターン崩壊処理用組成物
US9557652B2 (en) Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
TWI542550B (zh) 氧化鎢膜形成用組成物及使用其之氧化鎢膜之製造法
KR102004148B1 (ko) 선 간격 치수 50 nm 미만을 갖는 패턴을 구비한 집적회로의 제조를 위한 3 개 이상의 단쇄 퍼플루오르화기를 갖는 계면활성제의 용도
KR102917530B1 (ko) 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법
JP6063879B2 (ja) 集積回路デバイス、光デバイス、マイクロマシン及び線幅50nm以下のパターニングされた材料層を有する機械的精密デバイスの製造方法
TWI605117B (zh) 光微影用清潔組成物及使用該組成物形成光阻圖案的方法
US9891520B2 (en) Use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning
JP6328630B2 (ja) フォトレジスト現像用組成物、組成物の使用方法並びに集積回路装置、光学装置、マイクロマシン及び機械精密装置の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000