JP6324955B2 - ジェミニ添加剤を含む抗パターン崩壊処理用組成物 - Google Patents
ジェミニ添加剤を含む抗パターン崩壊処理用組成物 Download PDFInfo
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- JP6324955B2 JP6324955B2 JP2015521102A JP2015521102A JP6324955B2 JP 6324955 B2 JP6324955 B2 JP 6324955B2 JP 2015521102 A JP2015521102 A JP 2015521102A JP 2015521102 A JP2015521102 A JP 2015521102A JP 6324955 B2 JP6324955 B2 JP 6324955B2
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Images
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/008—Polymeric surface-active agents
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/40—Monoamines or polyamines; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261669686P | 2012-07-10 | 2012-07-10 | |
| US61/669,686 | 2012-07-10 | ||
| PCT/IB2013/055392 WO2014009847A1 (en) | 2012-07-10 | 2013-07-01 | Compositions for anti pattern collapse treatment comprising gemini additives |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015529840A JP2015529840A (ja) | 2015-10-08 |
| JP2015529840A5 JP2015529840A5 (enExample) | 2016-08-18 |
| JP6324955B2 true JP6324955B2 (ja) | 2018-05-16 |
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| EP (2) | EP2872948B1 (enExample) |
| JP (1) | JP6324955B2 (enExample) |
| KR (1) | KR102107367B1 (enExample) |
| CN (1) | CN104428716B (enExample) |
| IL (1) | IL236408B (enExample) |
| MY (1) | MY184912A (enExample) |
| RU (1) | RU2015104112A (enExample) |
| SG (1) | SG11201500098XA (enExample) |
| TW (1) | TWI611274B (enExample) |
| WO (1) | WO2014009847A1 (enExample) |
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| JP2015168680A (ja) * | 2014-03-11 | 2015-09-28 | 東ソー株式会社 | ジェミニ型界面活性剤 |
| JP6325464B2 (ja) * | 2015-01-05 | 2018-05-16 | 信越化学工業株式会社 | 現像液及びこれを用いたパターン形成方法 |
| JP2016139774A (ja) * | 2015-01-23 | 2016-08-04 | 富士フイルム株式会社 | パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液 |
| CN111386332B (zh) * | 2017-11-28 | 2025-05-23 | 巴斯夫欧洲公司 | 用于清洁或清洗产品的包含一级和二级表面活性剂的组合物 |
| JP7498544B2 (ja) * | 2018-05-08 | 2024-06-12 | 日本化薬株式会社 | 洗浄液及びインクジェットプリンタの洗浄方法 |
| EP4179057A1 (en) * | 2020-07-09 | 2023-05-17 | Basf Se | Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
| JP2023070641A (ja) * | 2021-11-09 | 2023-05-19 | 信越化学工業株式会社 | 半導体基板パターン倒壊抑制用充填膜形成材料及び半導体基板の処理方法 |
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| JP4027494B2 (ja) * | 1998-04-07 | 2007-12-26 | 花王株式会社 | リンス剤組成物 |
| US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| TW558736B (en) | 2000-02-26 | 2003-10-21 | Shipley Co Llc | Method of reducing defects |
| KR20030012692A (ko) * | 2001-08-03 | 2003-02-12 | 주식회사 엘지생활건강 | 계면활성제 시스템 |
| CN1564861A (zh) * | 2001-08-03 | 2005-01-12 | Lg生活健康株式会社 | 复合表面活性剂体系 |
| US6641986B1 (en) | 2002-08-12 | 2003-11-04 | Air Products And Chemicals, Inc. | Acetylenic diol surfactant solutions and methods of using same |
| US7700257B2 (en) * | 2003-03-28 | 2010-04-20 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist composition and resist pattern formation method by the use thereof |
| US20040259371A1 (en) * | 2003-06-18 | 2004-12-23 | Zhijian Lu | Reduction of resist defects |
| EP1553454A2 (en) | 2003-12-22 | 2005-07-13 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| KR100574349B1 (ko) * | 2004-02-03 | 2006-04-27 | 삼성전자주식회사 | 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법 |
| US20080299487A1 (en) | 2007-05-31 | 2008-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography material and lithography process |
| CN101236357B (zh) * | 2007-01-30 | 2012-07-04 | 住友化学株式会社 | 化学放大型抗蚀剂组合物 |
| US20080280230A1 (en) | 2007-05-10 | 2008-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process including a chemical rinse |
| JP2009237168A (ja) * | 2008-03-26 | 2009-10-15 | Fujifilm Corp | 平版印刷版の作製方法 |
| JP2009237169A (ja) * | 2008-03-26 | 2009-10-15 | Fujifilm Corp | 平版印刷版の作製方法 |
| CN101766973B (zh) * | 2009-01-07 | 2012-06-13 | 湖北大学 | 一种对称型阳离子表面活性剂及其制备方法 |
| JP5624753B2 (ja) | 2009-03-31 | 2014-11-12 | 東京応化工業株式会社 | リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法 |
| MY161218A (en) | 2011-01-25 | 2017-04-14 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
| CN103430102B (zh) | 2011-03-18 | 2017-02-08 | 巴斯夫欧洲公司 | 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法 |
| MY181266A (en) * | 2012-12-14 | 2020-12-21 | Basf Se | Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
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- 2013-07-01 SG SG11201500098XA patent/SG11201500098XA/en unknown
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- 2013-07-01 EP EP13816602.0A patent/EP2872948B1/en active Active
- 2013-07-01 MY MYPI2015000032A patent/MY184912A/en unknown
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| KR20150036461A (ko) | 2015-04-07 |
| TWI611274B (zh) | 2018-01-11 |
| WO2014009847A1 (en) | 2014-01-16 |
| SG11201500098XA (en) | 2015-02-27 |
| EP3299891B1 (en) | 2019-05-15 |
| EP2872948A4 (en) | 2016-11-02 |
| US10385295B2 (en) | 2019-08-20 |
| CN104428716B (zh) | 2019-06-14 |
| MY184912A (en) | 2021-04-30 |
| EP2872948A1 (en) | 2015-05-20 |
| CN104428716A (zh) | 2015-03-18 |
| EP3299891A1 (en) | 2018-03-28 |
| JP2015529840A (ja) | 2015-10-08 |
| KR102107367B1 (ko) | 2020-05-07 |
| TW201418910A (zh) | 2014-05-16 |
| IL236408A0 (en) | 2015-02-26 |
| US20150159123A1 (en) | 2015-06-11 |
| IL236408B (en) | 2020-03-31 |
| RU2015104112A (ru) | 2016-08-27 |
| EP2872948B1 (en) | 2017-10-11 |
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