RO96967B - Element hall integrabil - Google Patents
Element hall integrabilInfo
- Publication number
- RO96967B RO96967B RO126285A RO12628586A RO96967B RO 96967 B RO96967 B RO 96967B RO 126285 A RO126285 A RO 126285A RO 12628586 A RO12628586 A RO 12628586A RO 96967 B RO96967 B RO 96967B
- Authority
- RO
- Romania
- Prior art keywords
- stage
- hall effect
- circuit
- coupled
- differencing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
Abstract
Inventia se refera la un element Hall integrabil, utilizat, de exemplu, în wattmetre sau contoare electrice care servesc la masurarea intensitatii unui curent electric sau a produsului tensiune-intensitate. Elementul Hall, conform inventiei, prezintacel putin doua contacte de curent si doua contacte de senzori, iar cel putin între zona activa a elementului Hall si suprafata elementului Hall este dispus un strat de baraj care acopera partea de sus a zonei active a elementului Hall. Iesirea elementului Hall este legata la intrarea în comanda a elementului Hall prin intermediul unui circuit de reglaj care regleaza grosimea stratului de baraj, circuitul de reglaj fiind alcatuit cel putin dintr-un dispozitiv de pregatire valori reale, un trad uctor valori de referinta si un traductor diferential valori de referinta/valori reale.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH2175/85A CH668146A5 (de) | 1985-05-22 | 1985-05-22 | Einrichtung mit einem hallelement in integrierter halbleitertechnologie. |
PCT/CH1986/000055 WO1986007195A1 (en) | 1985-05-22 | 1986-04-25 | Device comprising a hall element incorporated in an integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
RO96967A RO96967A (ro) | 1989-05-30 |
RO96967B true RO96967B (ro) | 1989-06-01 |
Family
ID=4227644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RO126285A RO96967B (ro) | 1985-05-22 | 1986-12-29 | Element hall integrabil |
Country Status (21)
Country | Link |
---|---|
US (1) | US4929993A (ro) |
EP (1) | EP0204135B1 (ro) |
JP (1) | JPH0728057B2 (ro) |
KR (1) | KR940001298B1 (ro) |
CN (1) | CN1003480B (ro) |
AT (1) | ATE44423T1 (ro) |
AU (1) | AU590755B2 (ro) |
CA (1) | CA1254668A (ro) |
CH (1) | CH668146A5 (ro) |
CS (1) | CS275792B6 (ro) |
DE (1) | DE3664245D1 (ro) |
DK (1) | DK165430C (ro) |
ES (1) | ES8707378A1 (ro) |
HU (1) | HU202680B (ro) |
IE (1) | IE57475B1 (ro) |
IN (1) | IN167116B (ro) |
MX (1) | MX168025B (ro) |
NZ (1) | NZ216152A (ro) |
RO (1) | RO96967B (ro) |
WO (1) | WO1986007195A1 (ro) |
YU (1) | YU46673B (ro) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4760285A (en) * | 1987-03-30 | 1988-07-26 | Honeywell Inc. | Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity |
JPH02210860A (ja) * | 1989-02-09 | 1990-08-22 | Fujitsu Ltd | 半導体集積回路装置 |
US5240867A (en) * | 1989-02-09 | 1993-08-31 | Fujitsu Limited | Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production |
JPH0311669A (ja) * | 1989-06-08 | 1991-01-18 | Mitsubishi Petrochem Co Ltd | 磁気トランジスタ |
SI9110476A (en) * | 1991-03-18 | 1996-02-29 | Iskra Stevci Ind Merilne In Up | Hall sensor in integrated CMOS circuit |
US5627398A (en) * | 1991-03-18 | 1997-05-06 | Iskra Stevci--Industrija Merilne in Upravljalne Tehnike Kranj, D.O.O. | Hall-effect sensor incorporated in a CMOS integrated circuit |
DE4118255A1 (de) * | 1991-06-04 | 1992-12-10 | Itt Ind Gmbh Deutsche | Monolithisch integrierter sensorschaltkreis in cmos-technik |
JP3002310B2 (ja) * | 1991-11-21 | 2000-01-24 | 株式会社東芝 | 電力量計 |
US5444369A (en) * | 1993-02-18 | 1995-08-22 | Kearney-National, Inc. | Magnetic rotational position sensor with improved output linearity |
US5548151A (en) * | 1994-03-09 | 1996-08-20 | Kabushiki Kaisha Toshiba | Hall element for detecting a magnetic field perpendicular to a substrate |
JP3583458B2 (ja) * | 1994-03-09 | 2004-11-04 | 株式会社東芝 | ホール素子 |
JP3431326B2 (ja) * | 1995-02-01 | 2003-07-28 | 株式会社東芝 | ホール素子および電気量測定装置 |
JP3602611B2 (ja) * | 1995-03-30 | 2004-12-15 | 株式会社東芝 | 横型ホール素子 |
US5572058A (en) * | 1995-07-17 | 1996-11-05 | Honeywell Inc. | Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer |
JPH09148649A (ja) * | 1995-11-29 | 1997-06-06 | Toshiba Corp | ホール素子 |
JPH10270773A (ja) * | 1997-03-26 | 1998-10-09 | Toshiba Corp | ホール素子 |
DE19857275A1 (de) * | 1998-12-11 | 2000-06-15 | Johannes V Kluge | Integrierbarer Magnetfeldsensor aus Halbleitermaterial |
US6492697B1 (en) | 2000-04-04 | 2002-12-10 | Honeywell International Inc. | Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset |
GB2362505A (en) * | 2000-05-19 | 2001-11-21 | Secr Defence | Magnetic Field Sensor |
DE10144268B4 (de) * | 2001-09-08 | 2015-03-05 | Robert Bosch Gmbh | Vorrichtung zur Messung der Stärke einer Vektorkomponente eines Magnetfeldes |
DE10154495C5 (de) * | 2001-11-07 | 2018-01-11 | Infineon Technologies Ag | Konzept zur Kompensation der Einflüsse externer Störgrößen auf physikalische Funktionsparameter von integrierten Schaltungen |
KR100415379B1 (ko) * | 2002-01-08 | 2004-01-16 | 주식회사 케이이씨 | 3차원 홀 소자 및 그 제조 방법 |
DE10240404A1 (de) * | 2002-09-02 | 2004-03-18 | Austriamicrosystems Ag | Hall-Sensor und Verfahren zu dessen Betrieb |
JP4624787B2 (ja) * | 2002-09-10 | 2011-02-02 | メレクシス テッセンデルロ エヌヴィ | ホール素子を備える磁界センサ |
DE10313948B4 (de) * | 2003-03-27 | 2010-07-29 | Infineon Technologies Ag | Schaltung mit einem Hallelement, Verfahren zum Betreiben derselben und Verfahren zum Herstellen derselben |
JP4798102B2 (ja) * | 2004-03-30 | 2011-10-19 | 株式会社デンソー | 縦型ホール素子 |
JP2005333103A (ja) * | 2004-03-30 | 2005-12-02 | Denso Corp | 縦型ホール素子およびその製造方法 |
DE102005051306A1 (de) * | 2004-10-28 | 2006-06-08 | Denso Corp., Kariya | Vertikale Hallvorrichtung und Verfahren zur Einstellung der Offsetspannung einer vertikalen Hallvorrichtung |
EP2905581B1 (en) * | 2004-12-14 | 2017-10-25 | NTN Corporation | Sensor circuit for processing an output of a magnetic sensor array and a rotation detection apparatus comprising the sensor circuit and the sensor array |
JP4553714B2 (ja) * | 2004-12-14 | 2010-09-29 | Ntn株式会社 | 回転検出装置および回転検出装置付き軸受 |
US7205622B2 (en) * | 2005-01-20 | 2007-04-17 | Honeywell International Inc. | Vertical hall effect device |
JP2006210731A (ja) * | 2005-01-28 | 2006-08-10 | Denso Corp | ホール素子およびその製造方法 |
JP4784186B2 (ja) * | 2005-07-19 | 2011-10-05 | 株式会社デンソー | 縦型ホール素子およびその磁気検出感度調整方法 |
EP1746426B1 (de) * | 2005-07-22 | 2019-03-06 | Melexis Technologies NV | Stromsensor |
US7847536B2 (en) * | 2006-08-31 | 2010-12-07 | Itron, Inc. | Hall sensor with temperature drift control |
DE102007034803B4 (de) * | 2007-03-26 | 2015-03-12 | X-Fab Dresden Gmbh & Co. Kg | Halbleiterbauelement mit integriertem Hall-Effekt-Sensor |
DE102007055104A1 (de) * | 2007-11-16 | 2009-07-30 | Atmel Duisburg Gmbh | Schaltungsanordnung zum Abgleich einer Widerstandsschaltung |
US7782050B2 (en) | 2008-04-11 | 2010-08-24 | Infineon Technologies Ag | Hall effect device and method |
US20100145660A1 (en) * | 2008-12-08 | 2010-06-10 | Robert Bosch Gmbh | Mems sensor with built-in self-test |
US8114684B2 (en) | 2009-03-02 | 2012-02-14 | Robert Bosch Gmbh | Vertical hall effect sensor with current focus |
US8093891B2 (en) * | 2009-03-02 | 2012-01-10 | Robert Bosch Gmbh | Vertical Hall Effect sensor |
DE102009038938B4 (de) * | 2009-08-26 | 2013-10-10 | Austriamicrosystems Ag | Verfahren zur Herstellung eines vertikalen Hall-Sensors |
US20110160565A1 (en) * | 2009-12-31 | 2011-06-30 | Stubbs Scott R | Detecting proximity to mri scanner |
WO2011097297A1 (en) * | 2010-02-04 | 2011-08-11 | 44Cardiac Pacemakers, Inc. | Mri sensor based on the hall effect for crm imd applications |
DE102011101604B4 (de) * | 2010-06-02 | 2016-06-09 | Albert-Ludwigs-Universität Freiburg | Magnetfeldsensor |
US8829900B2 (en) * | 2011-02-08 | 2014-09-09 | Infineon Technologies Ag | Low offset spinning current hall plate and method to operate it |
US8896303B2 (en) | 2011-02-08 | 2014-11-25 | Infineon Technologies Ag | Low offset vertical Hall device and current spinning method |
CN102790072A (zh) * | 2011-05-19 | 2012-11-21 | 上海腾怡半导体有限公司 | 集成霍尔器件及其制作方法 |
US8901923B2 (en) | 2011-06-03 | 2014-12-02 | Micronas Gmbh | Magnetic field sensor |
US9484525B2 (en) * | 2012-05-15 | 2016-11-01 | Infineon Technologies Ag | Hall effect device |
US8981504B2 (en) | 2012-06-22 | 2015-03-17 | Infineon Technologies Ag | Vertical hall sensor with series-connected hall effect regions |
US9274183B2 (en) | 2012-06-22 | 2016-03-01 | Infineon Technologies Ag | Vertical hall device comprising first and second contact interconnections |
US8723515B2 (en) | 2012-07-05 | 2014-05-13 | Infineon Technologies Ag | Vertical hall sensor circuit comprising stress compensation circuit |
US9291648B2 (en) | 2013-08-07 | 2016-03-22 | Texas Instruments Incorporated | Hybrid closed-loop/open-loop magnetic current sensor |
KR102116147B1 (ko) * | 2014-03-06 | 2020-05-28 | 매그나칩 반도체 유한회사 | 매립형 마그네틱 센서 |
KR102103608B1 (ko) * | 2014-07-16 | 2020-04-23 | 매그나칩 반도체 유한회사 | 수직형 홀 센서, 홀 센서 모듈 및 그 제조 방법 |
US9599682B2 (en) * | 2014-11-26 | 2017-03-21 | Sii Semiconductor Corporation | Vertical hall element |
DE102015204637A1 (de) | 2015-03-13 | 2016-09-15 | Infineon Technologies Ag | Verfahren zum Dotieren eines aktiven Hall-Effekt-Gebiets einer Hall-Effekt-Vorrichtung und Hall-Effekt-Vorrichtung mit einem dotierten aktiven Hall-Effekt-Gebiet |
JP6814035B2 (ja) * | 2016-12-05 | 2021-01-13 | エイブリック株式会社 | 半導体装置 |
JP6865579B2 (ja) | 2016-12-28 | 2021-04-28 | エイブリック株式会社 | 半導体装置 |
JP6910150B2 (ja) * | 2017-01-18 | 2021-07-28 | エイブリック株式会社 | 半導体装置 |
JP2018190793A (ja) * | 2017-04-28 | 2018-11-29 | エイブリック株式会社 | 半導体装置 |
US10534045B2 (en) * | 2017-09-20 | 2020-01-14 | Texas Instruments Incorporated | Vertical hall-effect sensor for detecting two-dimensional in-plane magnetic fields |
JP7133968B2 (ja) * | 2018-04-24 | 2022-09-09 | エイブリック株式会社 | 半導体装置 |
JP7266386B2 (ja) * | 2018-11-09 | 2023-04-28 | エイブリック株式会社 | 半導体装置 |
US11047930B2 (en) * | 2019-03-11 | 2021-06-29 | Globalfoundries Singapore Pte. Ltd. | Hall effect sensors with tunable sensitivity and/or resistance |
DE102019004599B4 (de) * | 2019-07-04 | 2021-01-14 | Tdk-Micronas Gmbh | Vertikale Hallsensorstruktur, Betrieb derselben und vertikaler Hallsensor |
GB201913936D0 (en) * | 2019-09-27 | 2019-11-13 | Univ Coventry | A magnetic field sensor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3911468A (en) * | 1970-05-22 | 1975-10-07 | Kyoichiro Fujikawa | Magnetic-to-electric conversion semiconductor device |
US4129880A (en) * | 1977-07-01 | 1978-12-12 | International Business Machines Incorporated | Channel depletion boundary modulation magnetic field sensor |
US4276555A (en) * | 1978-07-13 | 1981-06-30 | International Business Machines Corporation | Controlled avalanche voltage transistor and magnetic sensor |
US4253107A (en) * | 1978-10-06 | 1981-02-24 | Sprague Electric Company | Integrated circuit with ion implanted hall-cell |
US4516144A (en) * | 1982-09-23 | 1985-05-07 | Eaton Corporation | Columnated and trimmed magnetically sensitive semiconductor |
US4660065A (en) * | 1983-06-10 | 1987-04-21 | Texas Instruments Incorporated | Hall effect device with surface potential shielding layer |
EP0162165A3 (en) * | 1983-06-10 | 1986-07-16 | Texas Instruments Incorporated | A Hall effect device and method for fabricating such a device |
US4578692A (en) * | 1984-04-16 | 1986-03-25 | Sprague Electric Company | Integrated circuit with stress isolated Hall element |
CH668147A5 (de) * | 1985-05-22 | 1988-11-30 | Landis & Gyr Ag | Einrichtung mit einem hallelement in integrierter halbleitertechnologie. |
-
1985
- 1985-05-22 CH CH2175/85A patent/CH668146A5/de not_active IP Right Cessation
-
1986
- 1986-04-25 US US06/856,460 patent/US4929993A/en not_active Expired - Fee Related
- 1986-04-25 HU HU862347A patent/HU202680B/hu not_active IP Right Cessation
- 1986-04-25 KR KR1019870700048A patent/KR940001298B1/ko not_active IP Right Cessation
- 1986-04-25 JP JP61502209A patent/JPH0728057B2/ja not_active Expired - Lifetime
- 1986-04-25 WO PCT/CH1986/000055 patent/WO1986007195A1/de unknown
- 1986-04-25 AU AU56947/86A patent/AU590755B2/en not_active Ceased
- 1986-04-26 EP EP86105812A patent/EP0204135B1/de not_active Expired
- 1986-04-26 AT AT86105812T patent/ATE44423T1/de not_active IP Right Cessation
- 1986-04-26 DE DE8686105812T patent/DE3664245D1/de not_active Expired
- 1986-05-12 CS CS863437A patent/CS275792B6/cs unknown
- 1986-05-13 NZ NZ216152A patent/NZ216152A/xx unknown
- 1986-05-15 IN IN435/DEL/86A patent/IN167116B/en unknown
- 1986-05-20 CA CA000509530A patent/CA1254668A/en not_active Expired
- 1986-05-20 MX MX002561A patent/MX168025B/es unknown
- 1986-05-21 ES ES555178A patent/ES8707378A1/es not_active Expired
- 1986-05-21 IE IE1353/86A patent/IE57475B1/en not_active IP Right Cessation
- 1986-05-21 CN CN86103454.6A patent/CN1003480B/zh not_active Expired
- 1986-05-22 YU YU86186A patent/YU46673B/sh unknown
- 1986-12-29 RO RO126285A patent/RO96967B/ro unknown
-
1987
- 1987-01-22 DK DK036187A patent/DK165430C/da not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
HU202680B (en) | 1991-03-28 |
YU86186A (en) | 1989-12-31 |
KR940001298B1 (ko) | 1994-02-18 |
IE861353L (en) | 1986-11-22 |
US4929993A (en) | 1990-05-29 |
EP0204135A1 (de) | 1986-12-10 |
CN86103454A (zh) | 1986-11-19 |
AU5694786A (en) | 1986-12-24 |
IN167116B (ro) | 1990-09-01 |
DE3664245D1 (en) | 1989-08-10 |
EP0204135B1 (de) | 1989-07-05 |
DK36187D0 (da) | 1987-01-22 |
MX168025B (es) | 1993-04-29 |
KR880700476A (ko) | 1988-03-15 |
HUT44364A (en) | 1988-02-29 |
CH668146A5 (de) | 1988-11-30 |
WO1986007195A1 (en) | 1986-12-04 |
IE57475B1 (en) | 1993-02-10 |
CA1254668A (en) | 1989-05-23 |
ES555178A0 (es) | 1987-07-16 |
JPS62502927A (ja) | 1987-11-19 |
CS275792B6 (en) | 1992-03-18 |
AU590755B2 (en) | 1989-11-16 |
DK36187A (da) | 1987-01-22 |
RO96967A (ro) | 1989-05-30 |
CN1003480B (zh) | 1989-03-01 |
ATE44423T1 (de) | 1989-07-15 |
JPH0728057B2 (ja) | 1995-03-29 |
DK165430C (da) | 1993-04-05 |
YU46673B (sh) | 1994-01-20 |
DK165430B (da) | 1992-11-23 |
ES8707378A1 (es) | 1987-07-16 |
NZ216152A (en) | 1989-08-29 |
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