CS275792B6 - Integrated hall element - Google Patents
Integrated hall element Download PDFInfo
- Publication number
- CS275792B6 CS275792B6 CS863437A CS343786A CS275792B6 CS 275792 B6 CS275792 B6 CS 275792B6 CS 863437 A CS863437 A CS 863437A CS 343786 A CS343786 A CS 343786A CS 275792 B6 CS275792 B6 CS 275792B6
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- hall element
- lead
- current
- hall
- voltage
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000002800 charge carrier Substances 0.000 claims description 3
- 230000001846 repelling effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 42
- 238000005516 engineering process Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 20
- 239000011241 protective layer Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000006698 induction Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 230000003321 amplification Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH2175/85A CH668146A5 (de) | 1985-05-22 | 1985-05-22 | Einrichtung mit einem hallelement in integrierter halbleitertechnologie. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS275792B6 true CS275792B6 (en) | 1992-03-18 |
Family
ID=4227644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS863437A CS275792B6 (en) | 1985-05-22 | 1986-05-12 | Integrated hall element |
Country Status (21)
| Country | Link |
|---|---|
| US (1) | US4929993A (ro) |
| EP (1) | EP0204135B1 (ro) |
| JP (1) | JPH0728057B2 (ro) |
| KR (1) | KR940001298B1 (ro) |
| CN (1) | CN1003480B (ro) |
| AT (1) | ATE44423T1 (ro) |
| AU (1) | AU590755B2 (ro) |
| CA (1) | CA1254668A (ro) |
| CH (1) | CH668146A5 (ro) |
| CS (1) | CS275792B6 (ro) |
| DE (1) | DE3664245D1 (ro) |
| DK (1) | DK165430C (ro) |
| ES (1) | ES8707378A1 (ro) |
| HU (1) | HU202680B (ro) |
| IE (1) | IE57475B1 (ro) |
| IN (1) | IN167116B (ro) |
| MX (1) | MX168025B (ro) |
| NZ (1) | NZ216152A (ro) |
| RO (1) | RO96967B (ro) |
| WO (1) | WO1986007195A1 (ro) |
| YU (1) | YU46673B (ro) |
Families Citing this family (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4760285A (en) * | 1987-03-30 | 1988-07-26 | Honeywell Inc. | Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity |
| US5240867A (en) * | 1989-02-09 | 1993-08-31 | Fujitsu Limited | Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production |
| JPH02210860A (ja) * | 1989-02-09 | 1990-08-22 | Fujitsu Ltd | 半導体集積回路装置 |
| JPH0311669A (ja) * | 1989-06-08 | 1991-01-18 | Mitsubishi Petrochem Co Ltd | 磁気トランジスタ |
| US5627398A (en) * | 1991-03-18 | 1997-05-06 | Iskra Stevci--Industrija Merilne in Upravljalne Tehnike Kranj, D.O.O. | Hall-effect sensor incorporated in a CMOS integrated circuit |
| SI9110476A (en) * | 1991-03-18 | 1996-02-29 | Iskra Stevci Ind Merilne In Up | Hall sensor in integrated CMOS circuit |
| DE4118255A1 (de) * | 1991-06-04 | 1992-12-10 | Itt Ind Gmbh Deutsche | Monolithisch integrierter sensorschaltkreis in cmos-technik |
| JP3002310B2 (ja) * | 1991-11-21 | 2000-01-24 | 株式会社東芝 | 電力量計 |
| US5444369A (en) * | 1993-02-18 | 1995-08-22 | Kearney-National, Inc. | Magnetic rotational position sensor with improved output linearity |
| JP3583458B2 (ja) * | 1994-03-09 | 2004-11-04 | 株式会社東芝 | ホール素子 |
| US5548151A (en) * | 1994-03-09 | 1996-08-20 | Kabushiki Kaisha Toshiba | Hall element for detecting a magnetic field perpendicular to a substrate |
| JP3431326B2 (ja) * | 1995-02-01 | 2003-07-28 | 株式会社東芝 | ホール素子および電気量測定装置 |
| JP3602611B2 (ja) * | 1995-03-30 | 2004-12-15 | 株式会社東芝 | 横型ホール素子 |
| US5572058A (en) * | 1995-07-17 | 1996-11-05 | Honeywell Inc. | Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer |
| JPH09148649A (ja) * | 1995-11-29 | 1997-06-06 | Toshiba Corp | ホール素子 |
| JPH10270773A (ja) * | 1997-03-26 | 1998-10-09 | Toshiba Corp | ホール素子 |
| DE19857275A1 (de) * | 1998-12-11 | 2000-06-15 | Johannes V Kluge | Integrierbarer Magnetfeldsensor aus Halbleitermaterial |
| US6492697B1 (en) | 2000-04-04 | 2002-12-10 | Honeywell International Inc. | Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset |
| GB2362505A (en) * | 2000-05-19 | 2001-11-21 | Secr Defence | Magnetic Field Sensor |
| DE10144268B4 (de) * | 2001-09-08 | 2015-03-05 | Robert Bosch Gmbh | Vorrichtung zur Messung der Stärke einer Vektorkomponente eines Magnetfeldes |
| DE10154495C5 (de) | 2001-11-07 | 2018-01-11 | Infineon Technologies Ag | Konzept zur Kompensation der Einflüsse externer Störgrößen auf physikalische Funktionsparameter von integrierten Schaltungen |
| KR100415379B1 (ko) * | 2002-01-08 | 2004-01-16 | 주식회사 케이이씨 | 3차원 홀 소자 및 그 제조 방법 |
| DE10240404A1 (de) * | 2002-09-02 | 2004-03-18 | Austriamicrosystems Ag | Hall-Sensor und Verfahren zu dessen Betrieb |
| US7872322B2 (en) * | 2002-09-10 | 2011-01-18 | Melexis Tessenderlo Nv | Magnetic field sensor with a hall element |
| DE10313948B4 (de) * | 2003-03-27 | 2010-07-29 | Infineon Technologies Ag | Schaltung mit einem Hallelement, Verfahren zum Betreiben derselben und Verfahren zum Herstellen derselben |
| JP2005333103A (ja) * | 2004-03-30 | 2005-12-02 | Denso Corp | 縦型ホール素子およびその製造方法 |
| JP4798102B2 (ja) * | 2004-03-30 | 2011-10-19 | 株式会社デンソー | 縦型ホール素子 |
| DE102005051306A1 (de) * | 2004-10-28 | 2006-06-08 | Denso Corp., Kariya | Vertikale Hallvorrichtung und Verfahren zur Einstellung der Offsetspannung einer vertikalen Hallvorrichtung |
| US7948231B2 (en) | 2004-12-14 | 2011-05-24 | Ntn Corporation | Rotation detecting apparatus having magnetic sensor array and bearing provided with same |
| JP4553714B2 (ja) * | 2004-12-14 | 2010-09-29 | Ｎｔｎ株式会社 | 回転検出装置および回転検出装置付き軸受 |
| US7205622B2 (en) * | 2005-01-20 | 2007-04-17 | Honeywell International Inc. | Vertical hall effect device |
| JP2006210731A (ja) * | 2005-01-28 | 2006-08-10 | Denso Corp | ホール素子およびその製造方法 |
| JP4784186B2 (ja) * | 2005-07-19 | 2011-10-05 | 株式会社デンソー | 縦型ホール素子およびその磁気検出感度調整方法 |
| EP1746426B1 (de) * | 2005-07-22 | 2019-03-06 | Melexis Technologies NV | Stromsensor |
| US7847536B2 (en) * | 2006-08-31 | 2010-12-07 | Itron, Inc. | Hall sensor with temperature drift control |
| DE102007034803B4 (de) * | 2007-03-26 | 2015-03-12 | X-Fab Dresden Gmbh & Co. Kg | Halbleiterbauelement mit integriertem Hall-Effekt-Sensor |
| DE102007055104A1 (de) * | 2007-11-16 | 2009-07-30 | Atmel Duisburg Gmbh | Schaltungsanordnung zum Abgleich einer Widerstandsschaltung |
| US7782050B2 (en) * | 2008-04-11 | 2010-08-24 | Infineon Technologies Ag | Hall effect device and method |
| US20100145660A1 (en) * | 2008-12-08 | 2010-06-10 | Robert Bosch Gmbh | Mems sensor with built-in self-test |
| US8093891B2 (en) * | 2009-03-02 | 2012-01-10 | Robert Bosch Gmbh | Vertical Hall Effect sensor |
| US8114684B2 (en) | 2009-03-02 | 2012-02-14 | Robert Bosch Gmbh | Vertical hall effect sensor with current focus |
| DE102009038938B4 (de) * | 2009-08-26 | 2013-10-10 | Austriamicrosystems Ag | Verfahren zur Herstellung eines vertikalen Hall-Sensors |
| US20110160565A1 (en) * | 2009-12-31 | 2011-06-30 | Stubbs Scott R | Detecting proximity to mri scanner |
| WO2011097297A1 (en) * | 2010-02-04 | 2011-08-11 | 44Cardiac Pacemakers, Inc. | Mri sensor based on the hall effect for crm imd applications |
| DE102011101604B4 (de) * | 2010-06-02 | 2016-06-09 | Albert-Ludwigs-Universität Freiburg | Magnetfeldsensor |
| US8829900B2 (en) | 2011-02-08 | 2014-09-09 | Infineon Technologies Ag | Low offset spinning current hall plate and method to operate it |
| US8896303B2 (en) | 2011-02-08 | 2014-11-25 | Infineon Technologies Ag | Low offset vertical Hall device and current spinning method |
| CN102790072A (zh) * | 2011-05-19 | 2012-11-21 | 上海腾怡半导体有限公司 | 集成霍尔器件及其制作方法 |
| US8901923B2 (en) | 2011-06-03 | 2014-12-02 | Micronas Gmbh | Magnetic field sensor |
| US9484525B2 (en) * | 2012-05-15 | 2016-11-01 | Infineon Technologies Ag | Hall effect device |
| US8981504B2 (en) | 2012-06-22 | 2015-03-17 | Infineon Technologies Ag | Vertical hall sensor with series-connected hall effect regions |
| US9274183B2 (en) | 2012-06-22 | 2016-03-01 | Infineon Technologies Ag | Vertical hall device comprising first and second contact interconnections |
| US8723515B2 (en) | 2012-07-05 | 2014-05-13 | Infineon Technologies Ag | Vertical hall sensor circuit comprising stress compensation circuit |
| US9291648B2 (en) | 2013-08-07 | 2016-03-22 | Texas Instruments Incorporated | Hybrid closed-loop/open-loop magnetic current sensor |
| KR102116147B1 (ko) * | 2014-03-06 | 2020-05-28 | 매그나칩 반도체 유한회사 | 매립형 마그네틱 센서 |
| KR102103608B1 (ko) * | 2014-07-16 | 2020-04-23 | 매그나칩 반도체 유한회사 | 수직형 홀 센서, 홀 센서 모듈 및 그 제조 방법 |
| US9599682B2 (en) * | 2014-11-26 | 2017-03-21 | Sii Semiconductor Corporation | Vertical hall element |
| DE102015204637A1 (de) | 2015-03-13 | 2016-09-15 | Infineon Technologies Ag | Verfahren zum Dotieren eines aktiven Hall-Effekt-Gebiets einer Hall-Effekt-Vorrichtung und Hall-Effekt-Vorrichtung mit einem dotierten aktiven Hall-Effekt-Gebiet |
| JP6814035B2 (ja) * | 2016-12-05 | 2021-01-13 | エイブリック株式会社 | 半導体装置 |
| JP6865579B2 (ja) | 2016-12-28 | 2021-04-28 | エイブリック株式会社 | 半導体装置 |
| JP6910150B2 (ja) * | 2017-01-18 | 2021-07-28 | エイブリック株式会社 | 半導体装置 |
| JP2018190793A (ja) * | 2017-04-28 | 2018-11-29 | エイブリック株式会社 | 半導体装置 |
| US10534045B2 (en) * | 2017-09-20 | 2020-01-14 | Texas Instruments Incorporated | Vertical hall-effect sensor for detecting two-dimensional in-plane magnetic fields |
| JP7133968B2 (ja) * | 2018-04-24 | 2022-09-09 | エイブリック株式会社 | 半導体装置 |
| JP7266386B2 (ja) * | 2018-11-09 | 2023-04-28 | エイブリック株式会社 | 半導体装置 |
| US11047930B2 (en) * | 2019-03-11 | 2021-06-29 | Globalfoundries Singapore Pte. Ltd. | Hall effect sensors with tunable sensitivity and/or resistance |
| DE102019004599B4 (de) * | 2019-07-04 | 2021-01-14 | Tdk-Micronas Gmbh | Vertikale Hallsensorstruktur, Betrieb derselben und vertikaler Hallsensor |
| GB201913936D0 (en) * | 2019-09-27 | 2019-11-13 | Univ Coventry | A magnetic field sensor |
| US12474421B2 (en) * | 2021-08-13 | 2025-11-18 | Texas Instruments Incorporated | Hall effect sensor with reduced JFET effect |
| DE102023002342A1 (de) * | 2023-06-09 | 2024-12-12 | Tdk-Micronas Gmbh | Vertikaler III-V Hallsensor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3911468A (en) * | 1970-05-22 | 1975-10-07 | Kyoichiro Fujikawa | Magnetic-to-electric conversion semiconductor device |
| US4129880A (en) * | 1977-07-01 | 1978-12-12 | International Business Machines Incorporated | Channel depletion boundary modulation magnetic field sensor |
| US4276555A (en) * | 1978-07-13 | 1981-06-30 | International Business Machines Corporation | Controlled avalanche voltage transistor and magnetic sensor |
| US4253107A (en) * | 1978-10-06 | 1981-02-24 | Sprague Electric Company | Integrated circuit with ion implanted hall-cell |
| US4516144A (en) * | 1982-09-23 | 1985-05-07 | Eaton Corporation | Columnated and trimmed magnetically sensitive semiconductor |
| EP0162165A3 (en) * | 1983-06-10 | 1986-07-16 | Texas Instruments Incorporated | A Hall effect device and method for fabricating such a device |
| US4660065A (en) * | 1983-06-10 | 1987-04-21 | Texas Instruments Incorporated | Hall effect device with surface potential shielding layer |
| US4578692A (en) * | 1984-04-16 | 1986-03-25 | Sprague Electric Company | Integrated circuit with stress isolated Hall element |
| CH668147A5 (de) * | 1985-05-22 | 1988-11-30 | Landis & Gyr Ag | Einrichtung mit einem hallelement in integrierter halbleitertechnologie. |
-
1985
- 1985-05-22 CH CH2175/85A patent/CH668146A5/de not_active IP Right Cessation
-
1986
- 1986-04-25 HU HU862347A patent/HU202680B/hu not_active IP Right Cessation
- 1986-04-25 US US06/856,460 patent/US4929993A/en not_active Expired - Fee Related
- 1986-04-25 KR KR1019870700048A patent/KR940001298B1/ko not_active Expired - Fee Related
- 1986-04-25 JP JP61502209A patent/JPH0728057B2/ja not_active Expired - Lifetime
- 1986-04-25 WO PCT/CH1986/000055 patent/WO1986007195A1/de not_active Ceased
- 1986-04-25 AU AU56947/86A patent/AU590755B2/en not_active Ceased
- 1986-04-26 AT AT86105812T patent/ATE44423T1/de not_active IP Right Cessation
- 1986-04-26 DE DE8686105812T patent/DE3664245D1/de not_active Expired
- 1986-04-26 EP EP86105812A patent/EP0204135B1/de not_active Expired
- 1986-05-12 CS CS863437A patent/CS275792B6/cs unknown
- 1986-05-13 NZ NZ216152A patent/NZ216152A/xx unknown
- 1986-05-15 IN IN435/DEL/86A patent/IN167116B/en unknown
- 1986-05-20 CA CA000509530A patent/CA1254668A/en not_active Expired
- 1986-05-20 MX MX002561A patent/MX168025B/es unknown
- 1986-05-21 IE IE1353/86A patent/IE57475B1/en not_active IP Right Cessation
- 1986-05-21 CN CN86103454.6A patent/CN1003480B/zh not_active Expired
- 1986-05-21 ES ES555178A patent/ES8707378A1/es not_active Expired
- 1986-05-22 YU YU86186A patent/YU46673B/sh unknown
- 1986-12-29 RO RO126285A patent/RO96967B/ro unknown
-
1987
- 1987-01-22 DK DK036187A patent/DK165430C/da not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NZ216152A (en) | 1989-08-29 |
| YU46673B (sh) | 1994-01-20 |
| YU86186A (en) | 1989-12-31 |
| HU202680B (en) | 1991-03-28 |
| ATE44423T1 (de) | 1989-07-15 |
| ES555178A0 (es) | 1987-07-16 |
| DE3664245D1 (en) | 1989-08-10 |
| AU5694786A (en) | 1986-12-24 |
| RO96967B (ro) | 1989-06-01 |
| CH668146A5 (de) | 1988-11-30 |
| IE57475B1 (en) | 1993-02-10 |
| EP0204135B1 (de) | 1989-07-05 |
| KR880700476A (ko) | 1988-03-15 |
| MX168025B (es) | 1993-04-29 |
| RO96967A (ro) | 1989-05-30 |
| EP0204135A1 (de) | 1986-12-10 |
| KR940001298B1 (ko) | 1994-02-18 |
| CN1003480B (zh) | 1989-03-01 |
| AU590755B2 (en) | 1989-11-16 |
| IN167116B (ro) | 1990-09-01 |
| CN86103454A (zh) | 1986-11-19 |
| JPH0728057B2 (ja) | 1995-03-29 |
| DK165430C (da) | 1993-04-05 |
| ES8707378A1 (es) | 1987-07-16 |
| DK165430B (da) | 1992-11-23 |
| HUT44364A (en) | 1988-02-29 |
| DK36187D0 (da) | 1987-01-22 |
| DK36187A (da) | 1987-01-22 |
| IE861353L (en) | 1986-11-22 |
| US4929993A (en) | 1990-05-29 |
| JPS62502927A (ja) | 1987-11-19 |
| WO1986007195A1 (fr) | 1986-12-04 |
| CA1254668A (en) | 1989-05-23 |
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