PL3633729T3 - Panel wyświetlający z mikro-diodami elektroluminescencyjnymi oraz sposób jego wytwarzania - Google Patents

Panel wyświetlający z mikro-diodami elektroluminescencyjnymi oraz sposób jego wytwarzania

Info

Publication number
PL3633729T3
PL3633729T3 PL17911299.0T PL17911299T PL3633729T3 PL 3633729 T3 PL3633729 T3 PL 3633729T3 PL 17911299 T PL17911299 T PL 17911299T PL 3633729 T3 PL3633729 T3 PL 3633729T3
Authority
PL
Poland
Prior art keywords
manufacturing
light emitting
display panel
emitting diode
diode display
Prior art date
Application number
PL17911299.0T
Other languages
English (en)
Inventor
Macai LU
Original Assignee
Shenzhen China Star Optoelectronics Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co., Ltd. filed Critical Shenzhen China Star Optoelectronics Technology Co., Ltd.
Publication of PL3633729T3 publication Critical patent/PL3633729T3/pl

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
PL17911299.0T 2017-05-23 2017-06-20 Panel wyświetlający z mikro-diodami elektroluminescencyjnymi oraz sposób jego wytwarzania PL3633729T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710370731.9A CN106941108B (zh) 2017-05-23 2017-05-23 微发光二极管显示面板及其制作方法
PCT/CN2017/089253 WO2018214200A1 (zh) 2017-05-23 2017-06-20 微发光二极管显示面板及其制作方法

Publications (1)

Publication Number Publication Date
PL3633729T3 true PL3633729T3 (pl) 2022-09-19

Family

ID=59465082

Family Applications (1)

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PL17911299.0T PL3633729T3 (pl) 2017-05-23 2017-06-20 Panel wyświetlający z mikro-diodami elektroluminescencyjnymi oraz sposób jego wytwarzania

Country Status (7)

Country Link
US (2) US10263138B2 (pl)
EP (1) EP3633729B1 (pl)
JP (1) JP6838247B2 (pl)
KR (1) KR102319307B1 (pl)
CN (1) CN106941108B (pl)
PL (1) PL3633729T3 (pl)
WO (1) WO2018214200A1 (pl)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102587215B1 (ko) * 2016-12-21 2023-10-12 삼성디스플레이 주식회사 발광 장치 및 이를 구비한 표시 장치
CN107170773B (zh) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法
CN107393940B (zh) * 2017-09-06 2020-02-21 严光能 Led显示设备及其制造方法
CN107742636B (zh) * 2017-10-25 2020-04-03 上海天马微电子有限公司 一种显示面板和显示装置
CN109786307B (zh) * 2017-11-15 2021-02-05 鸿富锦精密工业（深圳）有限公司 微型led显示面板的制备方法
CN108231968B (zh) * 2017-12-11 2020-02-11 厦门市三安光电科技有限公司 微发光二极管及其转移方法
CN108364971B (zh) * 2018-03-20 2021-03-30 厦门市三安光电科技有限公司 微发光元件、微发光二极管及其转印方法
TWI721435B (zh) * 2018-05-28 2021-03-11 鴻海精密工業股份有限公司 微型發光二極體顯示面板
CN108807556B (zh) * 2018-06-11 2021-01-29 京东方科技集团股份有限公司 一种光学传感器件及其制作方法、显示器件、显示设备
CN110828500A (zh) * 2018-08-07 2020-02-21 深圳Tcl新技术有限公司 一种led显示屏及其制作方法
CN109148506B (zh) * 2018-08-24 2021-04-13 上海天马微电子有限公司 Micro LED转移方法及显示面板、显示装置
CN109300931B (zh) 2018-09-30 2021-02-26 上海天马微电子有限公司 一种Micro LED显示面板及制作方法、显示装置
CN112640118A (zh) * 2018-12-25 2021-04-09 深圳市柔宇科技股份有限公司 发光装置及其制造方法、显示面板及显示装置
CN109599037B (zh) * 2018-12-29 2020-07-10 武汉华星光电技术有限公司 显示面板及其制备方法
CN109585488A (zh) * 2019-01-02 2019-04-05 京东方科技集团股份有限公司 Led显示基板及其制作方法、显示装置
KR20200099037A (ko) * 2019-02-13 2020-08-21 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조 방법
KR20200105568A (ko) * 2019-02-28 2020-09-08 삼성디스플레이 주식회사 전자 장치, 전자 장치 제조 방법, 및 발광 소자 전이 방법
DE102019112733A1 (de) * 2019-05-15 2020-11-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lichtemittierendes Bauelement und Anzeigevorrichtung
CN110164322A (zh) * 2019-05-22 2019-08-23 深圳市华星光电半导体显示技术有限公司 一种显示面板及电子装置
CN112018227A (zh) * 2019-05-31 2020-12-01 云谷（固安）科技有限公司 显示面板及显示装置
CN110289279B (zh) * 2019-06-04 2021-09-24 上海天马微电子有限公司 一种转移方法、阵列基板、其制作方法及显示装置
CN110189628B (zh) * 2019-06-28 2023-01-10 京东方科技集团股份有限公司 一种背光模组及显示装置
TWI750488B (zh) 2019-07-17 2021-12-21 錼創顯示科技股份有限公司 半導體結構與微型半導體顯示裝置
KR20210012516A (ko) 2019-07-25 2021-02-03 삼성전자주식회사 Led 패키지를 구비한 디스플레이 모듈 및 그 제조 방법
CN112310115B (zh) * 2019-07-26 2023-06-06 京东方科技集团股份有限公司 一种驱动背板、显示面板及显示装置
CN112802789B (zh) * 2019-11-14 2022-08-30 成都辰显光电有限公司 一种微元件的转移方法
CN111029360B (zh) * 2019-11-19 2022-06-07 深圳市华星光电半导体显示技术有限公司 micro-LED显示器件的制作方法
CN111128942B (zh) * 2019-12-04 2021-07-23 深圳市华星光电半导体显示技术有限公司 一种微发光二极管显示基板及其制备方法
CN111211213B (zh) * 2020-04-21 2020-09-04 南京中电熊猫平板显示科技有限公司 一种显示背板及其制造方法
CN111509015A (zh) * 2020-04-27 2020-08-07 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN113451494B (zh) * 2020-05-09 2022-09-27 重庆康佳光电技术研究院有限公司 一种led背板
CN111584507B (zh) * 2020-05-13 2023-05-02 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法、显示终端
CN113707788B (zh) * 2020-05-22 2022-07-22 重庆康佳光电技术研究院有限公司 背板结构及其制作方法、巨量转移方法、显示设备
KR20210148536A (ko) * 2020-05-29 2021-12-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN112582519B (zh) * 2020-12-02 2022-03-11 苏州芯聚半导体有限公司 微发光二极管的转移方法及转移设备
KR20220088565A (ko) * 2020-12-18 2022-06-28 삼성디스플레이 주식회사 표시 장치
CN113078249A (zh) * 2021-03-31 2021-07-06 錼创显示科技股份有限公司 微型发光元件结构及显示装置
TWI765631B (zh) * 2021-03-31 2022-05-21 錼創顯示科技股份有限公司 微型發光元件結構及顯示裝置
CN113594198B (zh) * 2021-10-08 2021-12-28 罗化芯显示科技开发(江苏)有限公司 微发光二极管显示器件及其制作方法
KR20230069286A (ko) * 2021-11-11 2023-05-19 삼성디스플레이 주식회사 표시 장치
CN115425120B (zh) * 2022-08-09 2023-10-20 惠科股份有限公司 显示面板的制备方法
CN115295706B (zh) * 2022-09-29 2022-12-06 惠科股份有限公司 Led芯片转移方法及显示面板

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3906653B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
JP2003282478A (ja) * 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法
JP2010251360A (ja) * 2009-04-10 2010-11-04 Sony Corp 表示装置の製造方法および表示装置
US9698563B2 (en) * 2010-11-03 2017-07-04 3M Innovative Properties Company Flexible LED device and method of making
US8518204B2 (en) * 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8573469B2 (en) * 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
KR20140073351A (ko) * 2012-12-06 2014-06-16 엘지이노텍 주식회사 발광 소자
US9178123B2 (en) 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
US9105714B2 (en) * 2012-12-11 2015-08-11 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging bollards
US9252375B2 (en) * 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
KR101820275B1 (ko) * 2013-03-15 2018-01-19 애플 인크. 리던던시 스킴을 갖춘 발광 다이오드 디스플레이 및 통합 결함 검출 테스트를 갖는 발광 다이오드 디스플레이를 제작하는 방법
WO2014157455A1 (ja) * 2013-03-28 2014-10-02 東芝ホクト電子株式会社 発光装置、その製造方法、および発光装置使用装置
US8987765B2 (en) * 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
KR102116856B1 (ko) * 2014-06-18 2020-06-01 엑스-셀레프린트 리미티드 마이크로 어셈블리를 위한 gan 및 관련 물질들을 제조하기 위한 시스템들 및 방법들
JP6483246B2 (ja) * 2014-10-17 2019-03-13 インテル・コーポレーション 微小持ち上げ・接合組立法
KR101888608B1 (ko) * 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
KR101629268B1 (ko) * 2014-10-29 2016-06-10 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US9478583B2 (en) * 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
US20160181476A1 (en) * 2014-12-17 2016-06-23 Apple Inc. Micro led with dielectric side mirror
JP5866561B1 (ja) * 2014-12-26 2016-02-17 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
TWI665800B (zh) * 2015-06-16 2019-07-11 友達光電股份有限公司 發光二極體顯示器及其製造方法
WO2017034268A1 (ko) * 2015-08-21 2017-03-02 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR102416621B1 (ko) * 2015-08-31 2022-07-05 삼성디스플레이 주식회사 발광 다이오드 트랜스퍼
WO2017075776A1 (en) * 2015-11-04 2017-05-11 Goertek. Inc Transferring method, manufacturing method, device and electronic apparatus of micro-led
CN105870265A (zh) * 2016-04-19 2016-08-17 京东方科技集团股份有限公司 发光二极管基板及其制备方法、显示装置
CN106058010B (zh) 2016-07-26 2019-02-01 深圳市华星光电技术有限公司 微发光二极管阵列的转印方法
JP6740374B2 (ja) * 2016-12-22 2020-08-12 シャープ株式会社 表示装置および製造方法

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CN106941108A (zh) 2017-07-11
US10263138B2 (en) 2019-04-16
EP3633729A4 (en) 2021-02-17
KR20200004893A (ko) 2020-01-14
EP3633729A1 (en) 2020-04-08
WO2018214200A1 (zh) 2018-11-29
US10505084B2 (en) 2019-12-10
US20190181295A1 (en) 2019-06-13
JP6838247B2 (ja) 2021-03-03
KR102319307B1 (ko) 2021-11-03
EP3633729B1 (en) 2022-05-18
CN106941108B (zh) 2019-09-17
US20180342691A1 (en) 2018-11-29
JP2020521181A (ja) 2020-07-16

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