PH23800A - Method and apparatus for making electrophotographic devices - Google Patents
Method and apparatus for making electrophotographic devicesInfo
- Publication number
- PH23800A PH23800A PH31820A PH31820A PH23800A PH 23800 A PH23800 A PH 23800A PH 31820 A PH31820 A PH 31820A PH 31820 A PH31820 A PH 31820A PH 23800 A PH23800 A PH 23800A
- Authority
- PH
- Philippines
- Prior art keywords
- inner chamber
- cylindrical members
- outer surfaces
- plasma
- reaction gas
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3325—Problems associated with coating large area
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58008684A | 1984-02-14 | 1984-02-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
PH23800A true PH23800A (en) | 1989-11-03 |
Family
ID=24319630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PH31820A PH23800A (en) | 1984-02-14 | 1985-02-05 | Method and apparatus for making electrophotographic devices |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0154160B2 (fr) |
JP (1) | JPS60186849A (fr) |
KR (1) | KR930006605B1 (fr) |
AT (1) | ATE45392T1 (fr) |
AU (1) | AU3873385A (fr) |
CA (1) | CA1245183A (fr) |
DE (1) | DE3572198D1 (fr) |
PH (1) | PH23800A (fr) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60212768A (ja) * | 1984-04-06 | 1985-10-25 | Canon Inc | 光受容部材 |
EP0231531A3 (fr) * | 1986-02-03 | 1988-10-05 | Energy Conversion Devices, Inc. | Procédé et dispositif d'adaptation d'une fenêtre transparente aux micro-ondes |
JPS63114973A (ja) * | 1986-10-31 | 1988-05-19 | Canon Inc | マイクロ波プラズマcvd法による機能性堆積膜の形成装置 |
DE3742110C2 (de) * | 1986-12-12 | 1996-02-22 | Canon Kk | Verfahren zur Bildung funktioneller aufgedampfter Filme durch ein chemisches Mikrowellen-Plasma-Aufdampfverfahren |
JPS63235477A (ja) * | 1987-03-24 | 1988-09-30 | Canon Inc | マイクロ波プラズマcvd法による機能性堆積膜形成装置 |
US5016565A (en) * | 1988-09-01 | 1991-05-21 | Canon Kabushiki Kaisha | Microwave plasma chemical vapor deposition apparatus for forming functional deposited film with means for stabilizing plasma discharge |
JPH02175878A (ja) * | 1988-12-28 | 1990-07-09 | Canon Inc | 改良されたマイクロ波導入窓を有するマイクロ波プラズマcvd装置 |
JP2925298B2 (ja) * | 1990-11-08 | 1999-07-28 | キヤノン株式会社 | 堆積膜形成方法 |
JP2841243B2 (ja) * | 1990-11-19 | 1998-12-24 | キヤノン株式会社 | マイクロ波プラズマcvd法による堆積膜形成装置 |
US5314780A (en) | 1991-02-28 | 1994-05-24 | Canon Kabushiki Kaisha | Method for treating metal substrate for electro-photographic photosensitive member and method for manufacturing electrophotographic photosensitive member |
JP3076414B2 (ja) * | 1991-07-26 | 2000-08-14 | キヤノン株式会社 | マイクロ波プラズマcvd法による堆積膜形成装置 |
US5256576A (en) * | 1992-02-14 | 1993-10-26 | United Solar Systems Corporation | Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer |
JPH0633246A (ja) * | 1992-07-21 | 1994-02-08 | Canon Inc | 堆積膜形成方法および堆積膜形成装置 |
JP3155413B2 (ja) * | 1992-10-23 | 2001-04-09 | キヤノン株式会社 | 光受容部材の形成方法、該方法による光受容部材および堆積膜の形成装置 |
JP3102721B2 (ja) * | 1993-03-23 | 2000-10-23 | キヤノン株式会社 | 電子写真感光体の製造方法 |
JP3236111B2 (ja) * | 1993-03-31 | 2001-12-10 | キヤノン株式会社 | プラズマ処理装置及び処理方法 |
JP3563789B2 (ja) | 1993-12-22 | 2004-09-08 | キヤノン株式会社 | 電子写真感光体の製造方法及び該製造方法に用いられる治具 |
JP3630831B2 (ja) * | 1995-04-03 | 2005-03-23 | キヤノン株式会社 | 堆積膜の形成方法 |
JP3530667B2 (ja) | 1996-01-19 | 2004-05-24 | キヤノン株式会社 | 電子写真感光体およびその製造方法 |
US6065425A (en) * | 1996-03-25 | 2000-05-23 | Canon Kabushiki Kaisha | Plasma process apparatus and plasma process method |
US6076481A (en) * | 1996-04-03 | 2000-06-20 | Canon Kabushiki Kaisha | Plasma processing apparatus and plasma processing method |
US6435130B1 (en) | 1996-08-22 | 2002-08-20 | Canon Kabushiki Kaisha | Plasma CVD apparatus and plasma processing method |
US6152071A (en) * | 1996-12-11 | 2000-11-28 | Canon Kabushiki Kaisha | High-frequency introducing means, plasma treatment apparatus, and plasma treatment method |
JP3428865B2 (ja) | 1997-07-09 | 2003-07-22 | キヤノン株式会社 | 堆積膜の形成装置及び堆積膜形成方法 |
US6001521A (en) * | 1997-10-29 | 1999-12-14 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
JPH11135442A (ja) * | 1997-10-31 | 1999-05-21 | Canon Inc | 堆積膜形成装置及び堆積膜形成方法 |
US6156472A (en) * | 1997-11-06 | 2000-12-05 | Canon Kabushiki Kaisha | Method of manufacturing electrophotographic photosensitive member |
US6238832B1 (en) | 1997-12-25 | 2001-05-29 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
US6321759B1 (en) | 1997-12-26 | 2001-11-27 | Canon Kabushiki Kaisha | Method for cleaning a substrate |
US6406554B1 (en) | 1997-12-26 | 2002-06-18 | Canon Kabushiki Kaisha | Method and apparatus for producing electrophotographic photosensitive member |
JP3890153B2 (ja) * | 1997-12-26 | 2007-03-07 | キヤノン株式会社 | 電子写真感光体の製造方法及び製造装置 |
JP3483494B2 (ja) | 1998-03-31 | 2004-01-06 | キヤノン株式会社 | 真空処理装置および真空処理方法、並びに該方法によって作成される電子写真感光体 |
JP3658257B2 (ja) | 1998-12-24 | 2005-06-08 | キヤノン株式会社 | 洗浄方法及び洗浄装置及び電子写真感光体及び電子写真感光体の製造方法 |
EP1134619A3 (fr) | 2000-03-16 | 2003-04-02 | Canon Kabushiki Kaisha | Elément photosensible, appareil de production d' images et procédé de production d' images |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4137142A (en) * | 1977-12-27 | 1979-01-30 | Stork Brabant B.V. | Method and apparatus for sputtering photoconductive coating on endless flexible belts or cylinders |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
GB2033355B (en) * | 1978-09-07 | 1982-05-06 | Standard Telephones Cables Ltd | Semiconductor processing |
IN152873B (fr) * | 1979-02-15 | 1984-04-21 | Chicopee | |
JPS55131175A (en) * | 1979-03-30 | 1980-10-11 | Toshiba Corp | Surface treatment apparatus with microwave plasma |
JPS58125820A (ja) * | 1982-01-22 | 1983-07-27 | Toshiba Corp | 電子サイクロトロン共鳴型放電装置 |
JPS58132755A (ja) * | 1982-02-03 | 1983-08-08 | Toshiba Corp | アモルフアス・シリコン感光体製造方法及びその製造装置 |
JPS58132756A (ja) * | 1982-02-03 | 1983-08-08 | Toshiba Corp | アモルフアス・シリコン感光体製造方法とその製造装置 |
JPS58132754A (ja) * | 1982-02-03 | 1983-08-08 | Toshiba Corp | アモルフアス・シリコン感光体製造方法及びその製造装置 |
JPH0635323B2 (ja) * | 1982-06-25 | 1994-05-11 | 株式会社日立製作所 | 表面処理方法 |
-
1985
- 1985-01-31 EP EP85100997A patent/EP0154160B2/fr not_active Expired - Lifetime
- 1985-01-31 DE DE8585100997T patent/DE3572198D1/de not_active Expired
- 1985-01-31 AT AT85100997T patent/ATE45392T1/de not_active IP Right Cessation
- 1985-02-05 PH PH31820A patent/PH23800A/en unknown
- 1985-02-13 KR KR1019850000869A patent/KR930006605B1/ko not_active IP Right Cessation
- 1985-02-14 CA CA000474285A patent/CA1245183A/fr not_active Expired
- 1985-02-14 AU AU38733/85A patent/AU3873385A/en not_active Abandoned
- 1985-02-14 JP JP60028162A patent/JPS60186849A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
KR850006077A (ko) | 1985-09-28 |
JPS60186849A (ja) | 1985-09-24 |
AU3873385A (en) | 1985-08-22 |
EP0154160B2 (fr) | 1992-10-21 |
EP0154160B1 (fr) | 1989-08-09 |
KR930006605B1 (ko) | 1993-07-21 |
ATE45392T1 (de) | 1989-08-15 |
EP0154160A1 (fr) | 1985-09-11 |
DE3572198D1 (en) | 1989-09-14 |
JPH0524510B2 (fr) | 1993-04-08 |
CA1245183A (fr) | 1988-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3572198D1 (en) | Method and apparatus for making electrophotographic devices | |
US4163071A (en) | Method for forming hard wear-resistant coatings | |
ES8600086A1 (es) | Un aparato y procedimiento para la deposicion quimica de vapor | |
DE3169538D1 (en) | Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition | |
DE3062678D1 (en) | A method for processing substrate materials by means of treating plasma | |
SG45405A1 (en) | Gas feeding device and deposition film forming apparatus employing the same | |
EP0216603A3 (fr) | Appareil micro-onde générateur de post-luminescences plasmatiques | |
DK0773167T3 (da) | Apparat og fremgangsmåde til fremstilling af en plastbeholder, som er belagt med carbonfilm | |
AU1822288A (en) | Method of treating surfaces of substrates with the aid of a plasma | |
DE3068030D1 (en) | Process for continuously coating, at least a part of one side at least, of a metallic substrate and apparatus used therefor | |
JPS57167631A (en) | Plasma vapor-phase growing method | |
EP0119103A3 (fr) | Dispositif pour introduire et diriger un gaz réactif | |
ES8400991A1 (es) | Metodo de producir ferrosilicio. | |
ES478460A1 (es) | Procedimiento con su instalacion de realizacion para reves- tir porciones heladas con un producto granulado. | |
FR2488685B1 (fr) | Dispositif et procede pour l'exploitation d'un four a chambres ouvertes pour la fabrication de pieces moulees en carbone | |
DE3171183D1 (en) | Process and apparatus for the accelerated densification of a porous carbonaceous substrate by decomposition of a hydrocarbonaceous substance at high temperature and high pressure, and method for the preparation of the said substance | |
ES8707630A1 (es) | Perfeccionamientos introducidos en un aparato adaptado para depositar un material semiconductor en un substrato | |
IL66878A (en) | Method and apparatus for the vapor deposition of material upon a substrate | |
TW343393B (en) | Electron emissive film | |
JPS5575945A (en) | Optical fiber coating method | |
JPS5727033A (en) | Thin film treating device | |
DE3566681D1 (en) | Method of manufacturing semiconductor devices, in which material is deposited from a reaction gas, and apparatus for carrying out such a method | |
JPS6447875A (en) | Plasma cvd device | |
ES466902A1 (es) | Un metodo para formar una pelicula de fosforo-nitrogeno-oxi-geno. | |
JPS57188671A (en) | Formation of glow discharge film |