NO985472D0 - Transistor - Google Patents

Transistor

Info

Publication number
NO985472D0
NO985472D0 NO985472A NO985472A NO985472D0 NO 985472 D0 NO985472 D0 NO 985472D0 NO 985472 A NO985472 A NO 985472A NO 985472 A NO985472 A NO 985472A NO 985472 D0 NO985472 D0 NO 985472D0
Authority
NO
Norway
Prior art keywords
electrode
effect transistor
field
transistor
semiconductor material
Prior art date
Application number
NO985472A
Other languages
English (en)
Other versions
NO985472L (no
NO306529B1 (no
Inventor
Rolf Magnus Berggren
Bengt G Ran Gustafsson
Johan Roger Axel Karlsson
Original Assignee
Opticom As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO980224A external-priority patent/NO306528B1/no
Application filed by Opticom As filed Critical Opticom As
Priority to NO985472A priority Critical patent/NO306529B1/no
Publication of NO985472D0 publication Critical patent/NO985472D0/no
Priority to US09/380,611 priority patent/US6429457B1/en
Priority to EP99905363A priority patent/EP1051754B1/en
Priority to ES99905363T priority patent/ES2179619T3/es
Priority to AU25520/99A priority patent/AU732134C/en
Priority to PCT/NO1999/000013 priority patent/WO1999040631A1/no
Priority to DE69902441T priority patent/DE69902441T2/de
Priority to CNB998039977A priority patent/CN1210808C/zh
Priority to AT99905363T priority patent/ATE222027T1/de
Priority to JP2000530947A priority patent/JP3495703B2/ja
Priority to KR10-2000-7007821A priority patent/KR100368818B1/ko
Priority to DK99905363T priority patent/DK1051754T3/da
Priority to RU2000121548/28A priority patent/RU2189665C2/ru
Priority to CA002317759A priority patent/CA2317759C/en
Publication of NO985472L publication Critical patent/NO985472L/no
Publication of NO306529B1 publication Critical patent/NO306529B1/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66916—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN heterojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
NO985472A 1998-01-16 1998-11-23 Transistor NO306529B1 (no)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NO985472A NO306529B1 (no) 1998-01-16 1998-11-23 Transistor
CA002317759A CA2317759C (en) 1998-01-16 1999-01-14 A field-effect transistor
RU2000121548/28A RU2189665C2 (ru) 1998-01-16 1999-01-14 Полевой транзистор
PCT/NO1999/000013 WO1999040631A1 (no) 1998-01-16 1999-01-14 A field effect transistor
AT99905363T ATE222027T1 (de) 1998-01-16 1999-01-14 Feldeffekttransistor
ES99905363T ES2179619T3 (es) 1998-01-16 1999-01-14 Transistor con efecto de campo.
AU25520/99A AU732134C (en) 1998-01-16 1999-01-14 A field-effect transistor
US09/380,611 US6429457B1 (en) 1998-01-16 1999-01-14 Field-effect transistor
DE69902441T DE69902441T2 (de) 1998-01-16 1999-01-14 Feldeffekttransistor
CNB998039977A CN1210808C (zh) 1998-01-16 1999-01-14 场效应晶体管
EP99905363A EP1051754B1 (en) 1998-01-16 1999-01-14 A field-effect transistor
JP2000530947A JP3495703B2 (ja) 1998-01-16 1999-01-14 電界効果トランジスタおよび電界効果トランジスタの製造方法
KR10-2000-7007821A KR100368818B1 (ko) 1998-01-16 1999-01-14 전계 효과 트랜지스터
DK99905363T DK1051754T3 (da) 1998-01-16 1999-01-14 Felteffekttransistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO980224A NO306528B1 (no) 1998-01-16 1998-01-16 Felteffekttransistor
NO985472A NO306529B1 (no) 1998-01-16 1998-11-23 Transistor

Publications (3)

Publication Number Publication Date
NO985472D0 true NO985472D0 (no) 1998-11-23
NO985472L NO985472L (no) 1999-07-19
NO306529B1 NO306529B1 (no) 1999-11-15

Family

ID=26648813

Family Applications (1)

Application Number Title Priority Date Filing Date
NO985472A NO306529B1 (no) 1998-01-16 1998-11-23 Transistor

Country Status (14)

Country Link
US (1) US6429457B1 (no)
EP (1) EP1051754B1 (no)
JP (1) JP3495703B2 (no)
KR (1) KR100368818B1 (no)
CN (1) CN1210808C (no)
AT (1) ATE222027T1 (no)
AU (1) AU732134C (no)
CA (1) CA2317759C (no)
DE (1) DE69902441T2 (no)
DK (1) DK1051754T3 (no)
ES (1) ES2179619T3 (no)
NO (1) NO306529B1 (no)
RU (1) RU2189665C2 (no)
WO (1) WO1999040631A1 (no)

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US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
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US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
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US6885146B2 (en) 2002-03-14 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates
EP1367659B1 (en) * 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
KR100417461B1 (ko) * 2002-07-12 2004-02-05 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
CN100364108C (zh) * 2002-08-28 2008-01-23 中国科学院长春应用化学研究所 含有有机半导体的夹心型场效应晶体管及制作方法
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
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US7132680B2 (en) * 2003-06-09 2006-11-07 International Business Machines Corporation Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers
EP1498957A1 (de) * 2003-07-14 2005-01-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Feldeffekttransistor und Verfahren zum Herstellen eines Feldeffekttransistors
US7554121B2 (en) * 2003-12-26 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Organic semiconductor device
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CN102779855B (zh) * 2012-07-06 2015-08-12 哈尔滨理工大学 双肖特基结氧化锌半导体薄膜晶体管及制作方法
US10032924B2 (en) 2014-03-31 2018-07-24 The Hong Kong University Of Science And Technology Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeability
CN104465989B (zh) * 2014-12-26 2017-02-22 中国科学院微电子研究所 三端原子开关器件及其制备方法
US9653493B2 (en) * 2015-06-12 2017-05-16 Eastman Kodak Company Bottom-gate and top-gate VTFTs on common structure
US10504939B2 (en) 2017-02-21 2019-12-10 The Hong Kong University Of Science And Technology Integration of silicon thin-film transistors and metal-oxide thin film transistors
CN109037347A (zh) * 2018-07-28 2018-12-18 张玉英 一种具有三明治结构的钛酸铋薄膜晶体管及制备方法
KR102551995B1 (ko) * 2018-11-16 2023-07-06 엘지디스플레이 주식회사 수직 구조 트랜지스터 및 전자장치
KR102580260B1 (ko) 2021-10-12 2023-09-19 성균관대학교산학협력단 수직 성장한 결정립을 가지는 활성층을 포함하는 스페이스-프리 수직 전계 효과 트랜지스터
CN114122145B (zh) * 2021-11-15 2023-11-28 武汉华星光电半导体显示技术有限公司 薄膜晶体管、电子装置及其制备方法及显示装置

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Also Published As

Publication number Publication date
CN1210808C (zh) 2005-07-13
CN1293825A (zh) 2001-05-02
NO985472L (no) 1999-07-19
KR100368818B1 (ko) 2003-01-24
DE69902441T2 (de) 2003-04-17
AU732134B2 (en) 2001-04-12
JP2002503035A (ja) 2002-01-29
NO306529B1 (no) 1999-11-15
EP1051754A1 (en) 2000-11-15
DE69902441D1 (de) 2002-09-12
JP3495703B2 (ja) 2004-02-09
ATE222027T1 (de) 2002-08-15
KR20010034186A (ko) 2001-04-25
EP1051754B1 (en) 2002-08-07
ES2179619T3 (es) 2003-01-16
AU2552099A (en) 1999-08-23
US6429457B1 (en) 2002-08-06
CA2317759C (en) 2004-06-22
WO1999040631A1 (no) 1999-08-12
AU732134C (en) 2001-11-22
RU2189665C2 (ru) 2002-09-20
CA2317759A1 (en) 1999-08-12
DK1051754T3 (da) 2002-09-02

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