NO312698B1 - Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten - Google Patents
Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten Download PDFInfo
- Publication number
- NO312698B1 NO312698B1 NO20003507A NO20003507A NO312698B1 NO 312698 B1 NO312698 B1 NO 312698B1 NO 20003507 A NO20003507 A NO 20003507A NO 20003507 A NO20003507 A NO 20003507A NO 312698 B1 NO312698 B1 NO 312698B1
- Authority
- NO
- Norway
- Prior art keywords
- memory cells
- memory
- cells
- read
- polarization
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 124
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000011159 matrix material Substances 0.000 title claims description 17
- 230000010287 polarization Effects 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 49
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 230000001747 exhibiting effect Effects 0.000 claims abstract description 4
- 230000004044 response Effects 0.000 claims description 34
- 230000008859 change Effects 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 6
- 230000006399 behavior Effects 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000009897 systematic effect Effects 0.000 claims description 2
- 206010016256 fatigue Diseases 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 5
- 230000000977 initiatory effect Effects 0.000 description 4
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 3
- 230000036755 cellular response Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Shift Register Type Memory (AREA)
Priority Applications (15)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20003507A NO312698B1 (no) | 2000-07-07 | 2000-07-07 | Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten |
| KR10-2003-7000189A KR100522286B1 (ko) | 2000-07-07 | 2001-07-06 | 패시브 매트릭스 메모리에서 판독 및 기록 동작을 수행하는 방법 및 이를 수행하는 장치 |
| AT01970356T ATE291272T1 (de) | 2000-07-07 | 2001-07-06 | Verfahren zur durchführung von schreib- und leseoperationen in einem passiven matrix-speicher und vorrichtung zur durchführung des verfahrens |
| US09/899,094 US6606261B2 (en) | 2000-07-07 | 2001-07-06 | Method for performing write and read operations in a passive matrix memory, and apparatus for performing the method |
| ES01970356T ES2237599T3 (es) | 2000-07-07 | 2001-07-06 | Procedimiento para realizar operaciones de escritura y lectura en una memoria matricial pasiva y aparato para la realizacion del procedimiento. |
| JP2002508806A JP4542744B2 (ja) | 2000-07-07 | 2001-07-06 | 受動マトリックス・メモリの読出し動作および書込み動作を実行する方法および前記方法を実行する装置 |
| RU2003103297/09A RU2239888C1 (ru) | 2000-07-07 | 2001-07-06 | Способ выполнения операций записи и считывания в памяти с пассивной матричной адресацией и устройство для осуществления этого способа |
| AU9035701A AU9035701A (en) | 2000-07-07 | 2001-07-06 | A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method |
| DE60109472T DE60109472T2 (de) | 2000-07-07 | 2001-07-06 | Verfahren zur durchführung von schreib- und leseoperationen in einem passiven matrix-speicher und vorrichtung zur durchführung des verfahrens |
| DK01970356T DK1323167T3 (da) | 2000-07-07 | 2001-07-06 | Fremgangsmåde til at udföre skrive- og læseoperationer i en passiv matrixhukommelse, og apparatur til at udföre fremgangsmåden |
| PCT/NO2001/000290 WO2002005288A1 (en) | 2000-07-07 | 2001-07-06 | A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method |
| AU2001290357A AU2001290357B2 (en) | 2000-07-07 | 2001-07-06 | A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method |
| CN018124690A CN1440554B (zh) | 2000-07-07 | 2001-07-06 | 用于在无源矩阵存储器中执行读写操作的方法,以及执行该方法的装置 |
| CA002415661A CA2415661C (en) | 2000-07-07 | 2001-07-06 | A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method |
| EP01970356A EP1323167B1 (en) | 2000-07-07 | 2001-07-06 | A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20003507A NO312698B1 (no) | 2000-07-07 | 2000-07-07 | Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20003507D0 NO20003507D0 (no) | 2000-07-07 |
| NO20003507L NO20003507L (no) | 2002-01-08 |
| NO312698B1 true NO312698B1 (no) | 2002-06-17 |
Family
ID=19911358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20003507A NO312698B1 (no) | 2000-07-07 | 2000-07-07 | Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US6606261B2 (es) |
| EP (1) | EP1323167B1 (es) |
| JP (1) | JP4542744B2 (es) |
| KR (1) | KR100522286B1 (es) |
| CN (1) | CN1440554B (es) |
| AT (1) | ATE291272T1 (es) |
| AU (2) | AU2001290357B2 (es) |
| CA (1) | CA2415661C (es) |
| DE (1) | DE60109472T2 (es) |
| ES (1) | ES2237599T3 (es) |
| NO (1) | NO312698B1 (es) |
| RU (1) | RU2239888C1 (es) |
| WO (1) | WO2002005288A1 (es) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6937500B2 (en) | 2002-09-11 | 2005-08-30 | Thin Film Electronics Asa | Method for operating a ferroelectric of electret memory device, and a device of this kind |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
| US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
| US20030039233A1 (en) * | 2001-08-14 | 2003-02-27 | Aharon Satt | Estimation of resources in cellular networks |
| US6759249B2 (en) * | 2002-02-07 | 2004-07-06 | Sharp Laboratories Of America, Inc. | Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory |
| JP4282951B2 (ja) * | 2002-05-31 | 2009-06-24 | パイオニア株式会社 | 半導体記憶素子及びその寿命動作開始装置、並びに該半導体記憶素子を備えた情報記録媒体 |
| NO320017B1 (no) | 2003-03-26 | 2005-10-10 | Thin Film Electronics Asa | Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse |
| NO324607B1 (no) * | 2003-11-24 | 2007-11-26 | Thin Film Electronics Asa | Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering |
| NO322040B1 (no) | 2004-04-15 | 2006-08-07 | Thin Film Electronics Asa | Bimodal drift av ferroelektriske og elektrete minneceller og innretninger |
| NO324029B1 (no) * | 2004-09-23 | 2007-07-30 | Thin Film Electronics Asa | Lesemetode og deteksjonsanordning |
| JP4148210B2 (ja) * | 2004-09-30 | 2008-09-10 | ソニー株式会社 | 記憶装置及び半導体装置 |
| US20060215437A1 (en) * | 2005-03-28 | 2006-09-28 | Trika Sanjeev N | Recovering from memory imprints |
| US20070041233A1 (en) * | 2005-08-19 | 2007-02-22 | Seagate Technology Llc | Wake-up of ferroelectric thin films for probe storage |
| US7554832B2 (en) * | 2006-07-31 | 2009-06-30 | Sandisk 3D Llc | Passive element memory array incorporating reversible polarity word line and bit line decoders |
| US8279704B2 (en) * | 2006-07-31 | 2012-10-02 | Sandisk 3D Llc | Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same |
| EP1944763A1 (en) | 2007-01-12 | 2008-07-16 | STMicroelectronics S.r.l. | Reading circuit and method for data storage system |
| US7420836B1 (en) * | 2007-02-13 | 2008-09-02 | International Business Machines Corporation | Single-ended memory cell with improved read stability and memory using the cell |
| US7778098B2 (en) * | 2007-12-31 | 2010-08-17 | Cypress Semiconductor Corporation | Dummy cell for memory circuits |
| CN101222686B (zh) * | 2008-01-25 | 2011-08-10 | 中兴通讯股份有限公司 | 一种移动终端的状态报告方法 |
| JP4626832B2 (ja) * | 2008-07-10 | 2011-02-09 | セイコーエプソン株式会社 | 強誘電体記憶装置の駆動方法、強誘電体記憶装置および電子機器 |
| KR100934159B1 (ko) * | 2008-09-18 | 2009-12-31 | 한국과학기술원 | 강유전체 또는 일렉트렛 메모리 장치 |
| DE102011010946B4 (de) * | 2011-02-10 | 2014-08-28 | Texas Instruments Deutschland Gmbh | Halbleitervorrichtung und Verfahren zum Identifizieren und Korrigieren eines Bitfehlers in einer FRAM-Speichereinheit einer Halbleitervorrichtung |
| US9886571B2 (en) | 2016-02-16 | 2018-02-06 | Xerox Corporation | Security enhancement of customer replaceable unit monitor (CRUM) |
| US9697913B1 (en) | 2016-06-10 | 2017-07-04 | Micron Technology, Inc. | Ferroelectric memory cell recovery |
| US9613676B1 (en) * | 2016-06-29 | 2017-04-04 | Micron Technology, Inc. | Writing to cross-point non-volatile memory |
| US10978169B2 (en) | 2017-03-17 | 2021-04-13 | Xerox Corporation | Pad detection through pattern analysis |
| US10497521B1 (en) | 2018-10-29 | 2019-12-03 | Xerox Corporation | Roller electric contact |
| KR102634809B1 (ko) * | 2018-11-23 | 2024-02-08 | 에스케이하이닉스 주식회사 | 전자 장치 및 그것의 동작 방법 |
| JP2022052154A (ja) | 2020-09-23 | 2022-04-04 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5206829A (en) * | 1990-10-24 | 1993-04-27 | Sarita Thakoor | Thin film ferroelectric electro-optic memory |
| JPH0677434A (ja) * | 1992-08-27 | 1994-03-18 | Hitachi Ltd | 半導体記憶装置 |
| JP3279025B2 (ja) * | 1993-12-22 | 2002-04-30 | 株式会社日立製作所 | 半導体メモリ |
| US5898607A (en) * | 1994-09-14 | 1999-04-27 | Hitachi, Ltd. | Recording/reproducing method and recording/reproducing apparatus |
| JPH098247A (ja) * | 1995-06-15 | 1997-01-10 | Hitachi Ltd | 半導体記憶装置 |
| JPH0963294A (ja) * | 1995-08-28 | 1997-03-07 | Olympus Optical Co Ltd | 強誘電体メモリ及びそれを用いた記録装置 |
| DE69630758T2 (de) * | 1995-09-08 | 2004-05-27 | Fujitsu Ltd., Kawasaki | Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher |
| JP3875416B2 (ja) * | 1998-11-11 | 2007-01-31 | 富士通株式会社 | 強誘電体記憶装置 |
-
2000
- 2000-07-07 NO NO20003507A patent/NO312698B1/no unknown
-
2001
- 2001-07-06 DE DE60109472T patent/DE60109472T2/de not_active Expired - Lifetime
- 2001-07-06 RU RU2003103297/09A patent/RU2239888C1/ru not_active IP Right Cessation
- 2001-07-06 US US09/899,094 patent/US6606261B2/en not_active Expired - Lifetime
- 2001-07-06 JP JP2002508806A patent/JP4542744B2/ja not_active Expired - Fee Related
- 2001-07-06 KR KR10-2003-7000189A patent/KR100522286B1/ko not_active IP Right Cessation
- 2001-07-06 CA CA002415661A patent/CA2415661C/en not_active Expired - Fee Related
- 2001-07-06 AU AU2001290357A patent/AU2001290357B2/en not_active Ceased
- 2001-07-06 AU AU9035701A patent/AU9035701A/xx active Pending
- 2001-07-06 ES ES01970356T patent/ES2237599T3/es not_active Expired - Lifetime
- 2001-07-06 CN CN018124690A patent/CN1440554B/zh not_active Expired - Lifetime
- 2001-07-06 EP EP01970356A patent/EP1323167B1/en not_active Expired - Lifetime
- 2001-07-06 AT AT01970356T patent/ATE291272T1/de not_active IP Right Cessation
- 2001-07-06 WO PCT/NO2001/000290 patent/WO2002005288A1/en active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6937500B2 (en) | 2002-09-11 | 2005-08-30 | Thin Film Electronics Asa | Method for operating a ferroelectric of electret memory device, and a device of this kind |
Also Published As
| Publication number | Publication date |
|---|---|
| AU9035701A (en) | 2002-01-21 |
| ATE291272T1 (de) | 2005-04-15 |
| KR100522286B1 (ko) | 2005-10-19 |
| EP1323167A1 (en) | 2003-07-02 |
| US20020027794A1 (en) | 2002-03-07 |
| EP1323167B1 (en) | 2005-03-16 |
| RU2239888C1 (ru) | 2004-11-10 |
| NO20003507L (no) | 2002-01-08 |
| KR20030041954A (ko) | 2003-05-27 |
| NO20003507D0 (no) | 2000-07-07 |
| JP2004503052A (ja) | 2004-01-29 |
| CN1440554B (zh) | 2012-03-21 |
| ES2237599T3 (es) | 2005-08-01 |
| US6606261B2 (en) | 2003-08-12 |
| DE60109472T2 (de) | 2005-08-11 |
| DE60109472D1 (de) | 2005-04-21 |
| AU2001290357B2 (en) | 2005-03-03 |
| CA2415661C (en) | 2006-03-28 |
| WO2002005288A1 (en) | 2002-01-17 |
| CA2415661A1 (en) | 2002-01-17 |
| JP4542744B2 (ja) | 2010-09-15 |
| CN1440554A (zh) | 2003-09-03 |
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