NO20016269L - Fremgangsmåte og apparat for kjemisk dampdeponering av polysilisium - Google Patents

Fremgangsmåte og apparat for kjemisk dampdeponering av polysilisium

Info

Publication number
NO20016269L
NO20016269L NO20016269A NO20016269A NO20016269L NO 20016269 L NO20016269 L NO 20016269L NO 20016269 A NO20016269 A NO 20016269A NO 20016269 A NO20016269 A NO 20016269A NO 20016269 L NO20016269 L NO 20016269L
Authority
NO
Norway
Prior art keywords
tube
base plate
reactor
chamber
chemical vapor
Prior art date
Application number
NO20016269A
Other languages
English (en)
Norwegian (no)
Other versions
NO20016269D0 (no
Inventor
Mohan Chandra
Ijaz Jafri
Kedar Gupta
Vishwanath Prasad
Jonathan Talbott
Original Assignee
G T Equipment Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/507,711 external-priority patent/US6284312B1/en
Application filed by G T Equipment Technologies Inc filed Critical G T Equipment Technologies Inc
Publication of NO20016269D0 publication Critical patent/NO20016269D0/no
Publication of NO20016269L publication Critical patent/NO20016269L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
NO20016269A 2000-02-18 2001-12-20 Fremgangsmåte og apparat for kjemisk dampdeponering av polysilisium NO20016269L (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/507,711 US6284312B1 (en) 1999-02-19 2000-02-18 Method and apparatus for chemical vapor deposition of polysilicon
US18497000P 2000-02-25 2000-02-25
PCT/US2000/022842 WO2001061070A1 (en) 2000-02-18 2000-08-17 Method and apparatus for chemical vapor deposition of polysilicon

Publications (2)

Publication Number Publication Date
NO20016269D0 NO20016269D0 (no) 2001-12-20
NO20016269L true NO20016269L (no) 2002-01-03

Family

ID=26880657

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20016269A NO20016269L (no) 2000-02-18 2001-12-20 Fremgangsmåte og apparat for kjemisk dampdeponering av polysilisium

Country Status (11)

Country Link
EP (1) EP1257684B1 (zh)
JP (1) JP2003522716A (zh)
CN (1) CN1364203A (zh)
AT (1) ATE350508T1 (zh)
AU (1) AU2000267902A1 (zh)
CA (1) CA2386382A1 (zh)
CZ (1) CZ20021297A3 (zh)
DE (2) DE1257684T1 (zh)
NO (1) NO20016269L (zh)
SK (1) SK5872002A3 (zh)
WO (1) WO2001061070A1 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6874713B2 (en) 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency
CN100467665C (zh) * 2002-12-24 2009-03-11 西北工业大学 容器内表面化学气相沉积涂层方法
JP5291282B2 (ja) * 2003-08-13 2013-09-18 株式会社トクヤマ 管型反応容器および該反応容器を用いたシリコンの製造方法
US20050287806A1 (en) * 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
DE102004038717A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Herstellungsverfahren für Reaktor zur Zersetzung von Gasen
KR20080005953A (ko) * 2005-04-10 2008-01-15 알이씨 실리콘 인코포레이티드 다결정 실리콘의 제조 방법
ATE456395T1 (de) * 2005-07-19 2010-02-15 Rec Silicon Inc Siliziumsprudelbett
JP4905638B2 (ja) * 2005-10-11 2012-03-28 三菱マテリアル株式会社 電極の短絡防止方法および短絡防止板
JP4692247B2 (ja) * 2005-11-29 2011-06-01 チッソ株式会社 高純度多結晶シリコンの製造方法
CN100395373C (zh) * 2006-03-31 2008-06-18 南京大学 化学气相淀积的生长设备
FR2900226B1 (fr) * 2006-04-25 2017-09-29 Messier Bugatti Four de traitement ou analogue
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
DE102006040486A1 (de) * 2006-08-30 2008-03-13 Wacker Chemie Ag Verfahren zur zerstörungsfreien Materialprüfung von hochreinem polykristallinen Silicium
WO2009049477A1 (fr) * 2007-09-20 2009-04-23 Changzhou Ennoah Energy Technology Corporation Ltd. Procédé et appareil permettant la production de feuilles de silicium polycristallin
CN101224888B (zh) * 2007-10-23 2010-05-19 四川永祥多晶硅有限公司 多晶硅氢还原炉的硅芯棒加热启动方法
SE532505C2 (sv) 2007-12-12 2010-02-09 Plasmatrix Materials Ab Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet
CN101559948B (zh) * 2008-03-10 2014-02-26 安奕极电源系统有限责任公司 在沉积工艺期间在硅棒中产生均匀温度分布的装置和方法
CN101241955B (zh) * 2008-03-13 2010-06-09 江苏林洋新能源有限公司 多晶硅薄膜太阳能电池专用设备
JP5604803B2 (ja) * 2008-03-28 2014-10-15 三菱マテリアル株式会社 多結晶シリコン製造装置におけるポリマー不活性化方法
DE102008026811B4 (de) 2008-06-05 2012-04-12 Centrotherm Sitec Gmbh Verfahren und Anordnung zum Aufschmelzen von Silizium
CN101760778B (zh) * 2008-12-31 2011-12-14 江苏中能硅业科技发展有限公司 一种半导体材料棒材的制造方法
FI122940B (fi) * 2009-02-09 2012-09-14 Beneq Oy Reaktiokammio
CN101555012B (zh) * 2009-05-08 2011-01-12 六九硅业有限公司 一种制备多晶硅的方法
DE102009021825B3 (de) * 2009-05-18 2010-08-05 Kgt Graphit Technologie Gmbh Aufnahmekegel für Silizium-Anzuchtstäbe
CN101759182B (zh) * 2009-09-28 2011-12-14 江苏中能硅业科技发展有限公司 制造多晶硅的方法
CN101830467B (zh) * 2010-03-11 2012-05-23 化学工业第二设计院宁波工程有限公司 一种多晶硅分解炉
DE102010032103B4 (de) * 2010-07-23 2012-07-26 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zum Zünden von Siliziumstäben außerhalb eines CVD-Reaktors
TWI477646B (zh) * 2010-08-09 2015-03-21 Hon Hai Prec Ind Co Ltd 化學氣相沉積設備
CN101966991B (zh) * 2010-10-20 2012-07-18 上海森松压力容器有限公司 多晶硅生产装置
TWI506163B (zh) * 2012-07-13 2015-11-01 Epistar Corp 應用於氣相沉積的反應器及其承載裝置
CN104233225B (zh) * 2013-06-17 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室以及设置有该反应腔室的半导体处理设备
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
KR101768279B1 (ko) * 2014-09-29 2017-08-30 주식회사 엘지화학 수평형 반응기를 이용한 폴리실리콘 제조 장치 및 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
US5389152A (en) * 1992-10-09 1995-02-14 Avco Corporation Apparatus for densification of porous billets
WO2000049199A1 (en) * 1999-02-19 2000-08-24 Gt Equipment Technologies Inc. Method and apparatus for chemical vapor deposition of polysilicon

Also Published As

Publication number Publication date
EP1257684A4 (en) 2005-06-08
DE60032813T2 (de) 2007-11-08
WO2001061070A1 (en) 2001-08-23
NO20016269D0 (no) 2001-12-20
JP2003522716A (ja) 2003-07-29
CA2386382A1 (en) 2001-08-23
AU2000267902A1 (en) 2001-08-27
EP1257684B1 (en) 2007-01-03
DE60032813D1 (de) 2007-02-15
DE1257684T1 (de) 2003-06-26
CZ20021297A3 (cs) 2002-11-13
ATE350508T1 (de) 2007-01-15
CN1364203A (zh) 2002-08-14
EP1257684A1 (en) 2002-11-20
SK5872002A3 (en) 2003-06-03

Similar Documents

Publication Publication Date Title
NO20016269D0 (no) Fremgangsmåte og apparat for kjemisk dampdeponering av polysilisium
SU720996A3 (ru) Устройство дл непрерывного осаждени слоев из газовой фазы
JP5727362B2 (ja) 化学気相蒸着反応器内にガスを流通させるためのシステムおよび方法
SE8200235L (sv) Forfarande och apparat for kemisk angavsettning av filmer pa kiselskivor
CN105239057B (zh) 微波等离子体化学气相沉积装置
WO2010042237A3 (en) Method and apparatus for simplified startup of chemical vapor deposition of polysilicon
KR101842373B1 (ko) 유동층 반응기를 조작하는 방법
EP1081756A3 (en) A method for producing silicon nitride series film
CN205152329U (zh) 一种分段式石墨碳化硅涂层用气相沉积炉
US4518455A (en) CVD Process
JP6717632B2 (ja) 蒸着処理装置
EP1945831A4 (en) HEATING DEVICE FROM PARTITION TYPE
GB1586113A (en) Process and apparatus for concentrating corrosive liquid using radiant heat
FI913353A0 (fi) Foerfarande foer framstaellning av kiselkarbid.
JPS5976870A (ja) 酸化膜の化学蒸着法
TW201628706A (zh) 製備多晶矽顆粒的流化床反應器和組裝該流化床反應器的方法
JPS6168393A (ja) ホツトウオ−ル形エピタキシヤル成長装置
JPS60236216A (ja) 気相成長装置
JPS61289623A (ja) 気相反応装置
CN208562517U (zh) 一种新型的化学气相沉积炉
JPS6425518A (en) Method for forming amorphous silicon film
CN205152328U (zh) 一种卧式分段式石墨碳化硅涂层用气相沉积炉
ES343824A1 (es) Un procedimiento para la produccion de dioxido de silicio finamente dispersado.
TW411526B (en) Method and device for forming gate oxide layers
JPH03249177A (ja) Ｃｖｄ装置

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application