NO20004237L - Integrert deteksjonsforsterker - Google Patents

Integrert deteksjonsforsterker

Info

Publication number
NO20004237L
NO20004237L NO20004237A NO20004237A NO20004237L NO 20004237 L NO20004237 L NO 20004237L NO 20004237 A NO20004237 A NO 20004237A NO 20004237 A NO20004237 A NO 20004237A NO 20004237 L NO20004237 L NO 20004237L
Authority
NO
Norway
Prior art keywords
sensing
sensing device
memory cell
consecutive
read values
Prior art date
Application number
NO20004237A
Other languages
English (en)
Norwegian (no)
Other versions
NO20004237D0 (no
Inventor
Michael O Thompson
Richard H Womack
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20004237A priority Critical patent/NO20004237L/no
Publication of NO20004237D0 publication Critical patent/NO20004237D0/no
Priority to EP01984547A priority patent/EP1356470B1/en
Priority to US10/088,096 priority patent/US6788563B2/en
Priority to PCT/NO2001/000347 priority patent/WO2002017322A2/en
Priority to JP2002521300A priority patent/JP3808828B2/ja
Priority to DK01984547T priority patent/DK1356470T3/da
Priority to ES01984547T priority patent/ES2251519T3/es
Priority to HK04105172.5A priority patent/HK1062222B/xx
Priority to CNB018177379A priority patent/CN100345215C/zh
Priority to NO20014137A priority patent/NO313309B1/no
Priority to AU2002223158A priority patent/AU2002223158B2/en
Priority to KR10-2003-7002561A priority patent/KR100520696B1/ko
Priority to AU2315802A priority patent/AU2315802A/xx
Priority to DE60114049T priority patent/DE60114049T2/de
Priority to AT01984547T priority patent/ATE306712T1/de
Publication of NO20004237L publication Critical patent/NO20004237L/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/026—Sample-and-hold arrangements using a capacitive memory element associated with an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Amplifiers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Communication Control (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Analogue/Digital Conversion (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
NO20004237A 2000-08-24 2000-08-24 Integrert deteksjonsforsterker NO20004237L (no)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NO20004237A NO20004237L (no) 2000-08-24 2000-08-24 Integrert deteksjonsforsterker
AT01984547T ATE306712T1 (de) 2000-08-24 2001-08-24 Lesevorrichtung für einen passiver matrixspeicher und dazugehöriges leseverfahren
ES01984547T ES2251519T3 (es) 2000-08-24 2001-08-24 Dispositivo sensor para memoria de matriz pasiva y metodo de lectura correspondiente.
CNB018177379A CN100345215C (zh) 2000-08-24 2001-08-24 无源矩阵存储器的读出装置及与其一起使用的读出方法
PCT/NO2001/000347 WO2002017322A2 (en) 2000-08-24 2001-08-24 Sensing device for a passive matrix memory and a read method for use therewith
JP2002521300A JP3808828B2 (ja) 2000-08-24 2001-08-24 受動マトリックス・メモリの検出装置及びそれに使用される読み出し方法
DK01984547T DK1356470T3 (da) 2000-08-24 2001-08-24 Affölingsanordning til en passiv matrixhukommelse og læsefremgangsmåde til anvendelse dermed
EP01984547A EP1356470B1 (en) 2000-08-24 2001-08-24 Sensing device for a passive matrix memory and a read method for use therewith
HK04105172.5A HK1062222B (en) 2000-08-24 2001-08-24 Sensing device for a passive matrix memory and a read method for use therewith
US10/088,096 US6788563B2 (en) 2000-08-24 2001-08-24 Sensing device for a passive matrix memory and a read method for use therewith
NO20014137A NO313309B1 (no) 2000-08-24 2001-08-24 Deteksjonsinnretning for et passivt matriseminne og en lesemetode til bruk med samme
AU2002223158A AU2002223158B2 (en) 2000-08-24 2001-08-24 Sensing device for a passive matrix memory and a read method for use therewith
KR10-2003-7002561A KR100520696B1 (ko) 2000-08-24 2001-08-24 패시브 매트릭스 메모리용 감지 장치 및 상기 감지장치를이용한 판독 방법
AU2315802A AU2315802A (en) 2000-08-24 2001-08-24 Sensing device for a passive matrix memory and a read method for use therewith
DE60114049T DE60114049T2 (de) 2000-08-24 2001-08-24 Lesevorrichtung für einen passiver matrixspeicher und dazugehöriges leseverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20004237A NO20004237L (no) 2000-08-24 2000-08-24 Integrert deteksjonsforsterker

Publications (2)

Publication Number Publication Date
NO20004237D0 NO20004237D0 (no) 2000-08-24
NO20004237L true NO20004237L (no) 2002-02-25

Family

ID=19911500

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20004237A NO20004237L (no) 2000-08-24 2000-08-24 Integrert deteksjonsforsterker

Country Status (12)

Country Link
US (1) US6788563B2 (es)
EP (1) EP1356470B1 (es)
JP (1) JP3808828B2 (es)
KR (1) KR100520696B1 (es)
CN (1) CN100345215C (es)
AT (1) ATE306712T1 (es)
AU (2) AU2002223158B2 (es)
DE (1) DE60114049T2 (es)
DK (1) DK1356470T3 (es)
ES (1) ES2251519T3 (es)
NO (1) NO20004237L (es)
WO (1) WO2002017322A2 (es)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6504750B1 (en) * 2001-08-27 2003-01-07 Micron Technology, Inc. Resistive memory element sensing using averaging
EP1304701A1 (en) * 2001-10-18 2003-04-23 STMicroelectronics S.r.l. Sensing circuit for ferroelectric non-volatile memories
US6826102B2 (en) * 2002-05-16 2004-11-30 Micron Technology, Inc. Noise resistant small signal sensing circuit for a memory device
GB2390201A (en) * 2002-06-27 2003-12-31 Seiko Epson Corp Charge integrating sense amplifier
US6920060B2 (en) * 2002-08-14 2005-07-19 Intel Corporation Memory device, circuits and methods for operating a memory device
JP2004178734A (ja) * 2002-11-28 2004-06-24 Sanyo Electric Co Ltd メモリ装置
NO320017B1 (no) * 2003-03-26 2005-10-10 Thin Film Electronics Asa Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse
WO2006014500A2 (en) * 2004-07-06 2006-02-09 Kenet, Inc. A charge comparator with low input offset
NO324029B1 (no) 2004-09-23 2007-07-30 Thin Film Electronics Asa Lesemetode og deteksjonsanordning
US8116159B2 (en) 2005-03-30 2012-02-14 Ovonyx, Inc. Using a bit specific reference level to read a resistive memory
US20060227639A1 (en) * 2005-03-30 2006-10-12 Rico Srowik Current sensing circuit and method of operation
JP2007141399A (ja) * 2005-11-21 2007-06-07 Renesas Technology Corp 半導体装置
JP4374549B2 (ja) * 2005-12-20 2009-12-02 セイコーエプソン株式会社 強誘電体メモリ装置、電子機器および強誘電体メモリ装置の駆動方法
CN101814313B (zh) * 2010-04-02 2013-07-03 清华大学 单管单电容型铁电存储器
FR3005195B1 (fr) * 2013-04-24 2016-09-02 Soitec Silicon On Insulator Dispositif de memoire avec circuits de reference exploites dynamiquement.
US10973448B2 (en) * 2015-06-09 2021-04-13 The Governing Council Of The University Of Toronto System, methods and apparatuses for in situ electrochemical imaging
US11036294B2 (en) 2015-10-07 2021-06-15 The Governing Council Of The University Of Toronto Wireless power and data transmission system for wearable and implantable devices
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
EP3487578B1 (en) 2016-07-20 2022-12-07 The Governing Council of the University of Toronto Neurostimulator for delivering a stimulation in response to a predicted or detected neurophysiological condition
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
US10446232B2 (en) * 2017-12-19 2019-10-15 Micron Technology, Inc. Charge separation for memory sensing
US10497521B1 (en) 2018-10-29 2019-12-03 Xerox Corporation Roller electric contact

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579208A (en) 1969-02-28 1971-05-18 Gulf & Western Industries Ceramic memory amplifier
JPS62273694A (ja) 1986-05-22 1987-11-27 Sony Corp センスアンプ
LU86788A1 (de) * 1986-06-19 1987-07-24 Siemens Ag Breitbandsignal-koppeleinrichtung
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
US5218566A (en) * 1991-08-15 1993-06-08 National Semiconductor Corporation Dynamic adjusting reference voltage for ferroelectric circuits
US5274583A (en) * 1992-01-02 1993-12-28 National Semiconductor Corporation Charge-integrating preamplifier for ferroelectric memory
JPH0991970A (ja) * 1995-09-26 1997-04-04 Olympus Optical Co Ltd 非破壊型強誘電体メモリ及びその駆動方法
US5721699A (en) * 1996-03-18 1998-02-24 Symetrix Corporation Ferroelectric memory with feedback circuit
US5929800A (en) * 1996-08-05 1999-07-27 California Institute Of Technology Charge integration successive approximation analog-to-digital converter for focal plane applications using a single amplifier
KR100264075B1 (ko) 1997-06-20 2000-08-16 김영환 전하 증폭 비트 라인 센스 앰프
US6219273B1 (en) * 1998-03-02 2001-04-17 California Institute Of Technology Integrated semiconductor-magnetic random access memory system
US6044019A (en) * 1998-10-23 2000-03-28 Sandisk Corporation Non-volatile memory with improved sensing and method therefor
US6288934B1 (en) * 2000-09-06 2001-09-11 Oki Electric Industry Co., Ltd. Analog memory device and method for reading data stored therein
US6522568B1 (en) * 2001-07-24 2003-02-18 Intel Corporation Ferroelectric memory and method for reading the same
US6529398B1 (en) * 2001-09-27 2003-03-04 Intel Corporation Ferroelectric memory and method for reading the same

Also Published As

Publication number Publication date
AU2315802A (en) 2002-03-04
JP3808828B2 (ja) 2006-08-16
WO2002017322A3 (en) 2003-08-28
ES2251519T3 (es) 2006-05-01
WO2002017322A9 (en) 2002-11-28
EP1356470B1 (en) 2005-10-12
KR20040005817A (ko) 2004-01-16
US6788563B2 (en) 2004-09-07
CN1471711A (zh) 2004-01-28
DE60114049D1 (de) 2006-02-23
ATE306712T1 (de) 2005-10-15
US20020172069A1 (en) 2002-11-21
CN100345215C (zh) 2007-10-24
WO2002017322A2 (en) 2002-02-28
DK1356470T3 (da) 2005-12-19
JP2004515020A (ja) 2004-05-20
HK1062222A1 (zh) 2004-10-21
DE60114049T2 (de) 2006-06-22
NO20004237D0 (no) 2000-08-24
KR100520696B1 (ko) 2005-10-12
EP1356470A2 (en) 2003-10-29
AU2002223158B2 (en) 2005-03-03

Similar Documents

Publication Publication Date Title
NO20004237L (no) Integrert deteksjonsforsterker
NO20003507D0 (no) FremgangsmÕte til dynamisk lesing/skriving i et ferroelektrisk minne samt kretsløsninger for utførelse av fremgangsmÕten
JP4192701B2 (ja) 検知回路、バイオセンサ、および検知回路の駆動方法
NO20031364L (no) Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse
KR920010657A (ko) 반전 기록 용량을 갖는 반도체 메모리 및 반전 기록을 사용하는 메모리 테스팅 방법
DK1316090T3 (da) Ikke-flygtig passiv matrix og fremgangsmåde til udlæsning af denne
WO2002019341A3 (en) Semiconductor memory having dual port cell supporting hidden refresh
EP0840326A3 (en) Nonvolatile semiconductor memory device
EP1205937A3 (en) Magnetic memory device including storage element exhibiting ferromagnetic tunnel effect
JPH0222470B2 (es)
US6141280A (en) Refresh period automatic detecting device for semiconductor memory device, method of automatically detecting refresh period, and refresh period output device
ATE223614T1 (de) Einseitiges lesen unter verwendung von bitleitungen für dram
EP0690449A3 (en) Sense amplifier for semiconductor memory device
KR920010624A (ko) 반도체기억장치
TW200511309A (en) Memory device and method of amplifying voltage levels of bit line and complementary bit line
CN207009083U (zh) 基于忆阻器的双差分负反馈数据读取电路
US7139186B2 (en) Failure detection circuit
KR970059911A (ko) 리프레쉬 기능이 없는 dram 구성의 캐쉬 메모리 장치
TW200410255A (en) A memory device with power-saving mode and an electrics device with the memory device
SE9802800D0 (sv) Memory supervision
KR20010092954A (ko) 메모리 셀 정보 저장 방법
GB2239539A (en) Refreshing drams: controlling refresh rate
JP2002124100A (ja) 強誘電体メモリデバイス
KR970051367A (ko) 불휘발성 반도체 메모리의 워드라인 전압 최적화 방법
KR970029860A (ko) 반도체 메모리 장치

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application