DK1316090T3 - Ikke-flygtig passiv matrix og fremgangsmåde til udlæsning af denne - Google Patents

Ikke-flygtig passiv matrix og fremgangsmåde til udlæsning af denne

Info

Publication number
DK1316090T3
DK1316090T3 DK01985301T DK01985301T DK1316090T3 DK 1316090 T3 DK1316090 T3 DK 1316090T3 DK 01985301 T DK01985301 T DK 01985301T DK 01985301 T DK01985301 T DK 01985301T DK 1316090 T3 DK1316090 T3 DK 1316090T3
Authority
DK
Denmark
Prior art keywords
segment
memory
bit lines
bit
sensing means
Prior art date
Application number
DK01985301T
Other languages
English (en)
Inventor
Goeran Gustafsson
Johan Carlsson
Michael Thompson
Richard Womack
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of DK1316090T3 publication Critical patent/DK1316090T3/da

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Peptides Or Proteins (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Read Only Memory (AREA)
  • Magnetic Record Carriers (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
DK01985301T 2000-08-24 2001-08-24 Ikke-flygtig passiv matrix og fremgangsmåde til udlæsning af denne DK1316090T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20004236A NO20004236L (no) 2000-08-24 2000-08-24 Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme
PCT/NO2001/000348 WO2002025665A2 (en) 2000-08-24 2001-08-24 Non-volatile passive matrix and method for readout of the same

Publications (1)

Publication Number Publication Date
DK1316090T3 true DK1316090T3 (da) 2005-05-30

Family

ID=19911499

Family Applications (1)

Application Number Title Priority Date Filing Date
DK01985301T DK1316090T3 (da) 2000-08-24 2001-08-24 Ikke-flygtig passiv matrix og fremgangsmåde til udlæsning af denne

Country Status (14)

Country Link
US (1) US20030137865A1 (da)
EP (1) EP1316090B1 (da)
JP (1) JP3848620B2 (da)
KR (1) KR100540266B1 (da)
CN (1) CN100530420C (da)
AT (1) ATE290711T1 (da)
AU (2) AU2315902A (da)
CA (1) CA2420378C (da)
DE (1) DE60109307T2 (da)
DK (1) DK1316090T3 (da)
ES (1) ES2238053T3 (da)
NO (1) NO20004236L (da)
RU (1) RU2245584C2 (da)
WO (1) WO2002025665A2 (da)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
NO20015879A (no) * 2001-11-30 2003-03-31 Thin Film Electronics Asa Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utførelse av fremgangsmåten
US6996652B1 (en) * 2002-09-19 2006-02-07 Inapac Technology, Inc. High-speed segmented data bus architecture
NO324607B1 (no) * 2003-11-24 2007-11-26 Thin Film Electronics Asa Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering
KR100576484B1 (ko) * 2003-12-09 2006-05-10 주식회사 하이닉스반도체 차동 데이터를 가지는 불휘발성 강유전체 메모리 장치
NO324029B1 (no) * 2004-09-23 2007-07-30 Thin Film Electronics Asa Lesemetode og deteksjonsanordning
CN100466036C (zh) * 2005-06-30 2009-03-04 精工爱普生株式会社 显示装置及电子设备
TWI260643B (en) 2005-12-30 2006-08-21 Ind Tech Res Inst Organic memory
CN1996486B (zh) * 2005-12-31 2010-11-03 财团法人工业技术研究院 数字感测电路
CN1996495B (zh) * 2005-12-31 2010-11-03 财团法人工业技术研究院 有机存储器之位单元
EP1944763A1 (en) * 2007-01-12 2008-07-16 STMicroelectronics S.r.l. Reading circuit and method for data storage system
US9574326B2 (en) 2012-08-02 2017-02-21 Harnischfeger Technologies, Inc. Depth-related help functions for a shovel training simulator
AU2014202349A1 (en) 2012-08-02 2014-05-22 Harnischfeger Technologies, Inc. Depth-related help functions for a wheel loader training simulator
JP5714681B2 (ja) * 2013-10-25 2015-05-07 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9773553B1 (en) * 2016-08-19 2017-09-26 Micron Technology, Inc. Segmented memory and operation
DE102016012071A1 (de) 2016-10-10 2018-04-12 Kai-Uwe Demasius Matrix mit kapazitiver Steuerungsvorrichtung
US10504575B2 (en) 2016-10-10 2019-12-10 Kai-Uwe Demasius Capacitive matrix arrangement and method for actuation thereof
US11102437B2 (en) * 2018-11-20 2021-08-24 Samsung Electronics Co., Ltd. Memory circuit and semiconductor device
JP2020088497A (ja) * 2018-11-20 2020-06-04 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． メモリ回路、半導体装置および移動体デバイス
US20210258173A1 (en) * 2020-02-18 2021-08-19 International Business Machines Corporation Gain cell memory based physically unclonable function
CN111696602A (zh) * 2020-05-22 2020-09-22 珠海拍字节信息科技有限公司 铁电存储器及其操作方法
US11309034B2 (en) * 2020-07-15 2022-04-19 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599709A (en) * 1984-02-17 1986-07-08 At&T Bell Laboratories Byte organized static memory
DE68923573T2 (de) * 1988-03-31 1996-01-18 Sony Corp Eingangsschaltungen.
JP2982905B2 (ja) * 1989-10-02 1999-11-29 三菱電機株式会社 ダイナミック型半導体記憶装置
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
KR950011965B1 (ko) * 1992-02-19 1995-10-12 삼성전자주식회사 불휘발성 반도체 메모리 장치
TW231343B (da) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
US5337414A (en) * 1992-09-22 1994-08-09 Unisys Corporation Mass data storage and retrieval system
US5424997A (en) * 1994-03-15 1995-06-13 National Semiconductor Corporation Non-volatile semiconductor memory having switching devices for segmentation of a memory page and a method thereof
US5567636A (en) * 1995-02-27 1996-10-22 Motorola Inc. Process for forming a nonvolatile random access memory array
US5574692A (en) * 1995-06-07 1996-11-12 Lsi Logic Corporation Memory testing apparatus for microelectronic integrated circuit
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory

Also Published As

Publication number Publication date
CN100530420C (zh) 2009-08-19
ATE290711T1 (de) 2005-03-15
JP2004510283A (ja) 2004-04-02
EP1316090A2 (en) 2003-06-04
DE60109307T2 (de) 2006-04-13
JP3848620B2 (ja) 2006-11-22
DE60109307D1 (de) 2005-04-14
KR20030059110A (ko) 2003-07-07
RU2245584C2 (ru) 2005-01-27
NO20004236L (no) 2002-02-25
CA2420378C (en) 2006-05-09
KR100540266B1 (ko) 2006-01-10
WO2002025665A3 (en) 2002-05-16
WO2002025665A2 (en) 2002-03-28
AU2002223159B2 (en) 2005-04-14
CN1471712A (zh) 2004-01-28
NO20004236D0 (no) 2000-08-24
ES2238053T3 (es) 2005-08-16
CA2420378A1 (en) 2002-03-28
AU2315902A (en) 2002-04-02
US20030137865A1 (en) 2003-07-24
EP1316090B1 (en) 2005-03-09

Similar Documents

Publication Publication Date Title
DK1316090T3 (da) Ikke-flygtig passiv matrix og fremgangsmåde til udlæsning af denne
EP1476877B1 (en) Programmable conductor random access memory and method for sensing same
JP3990485B2 (ja) 半導体不揮発性記憶装置
KR950014905B1 (ko) 반도체기억장치 및 그 내부전압발생방법
CN104756192A (zh) 具有节能读取架构的存储器阵列
TWI305360B (en) Sensing circuit, biosensor, and method of operating a sensing circuit
KR920018766A (ko) 불휘발성 반도체 기억장치
TW200419579A (en) Non-volatile memory and method with improved sensing
TW201419280A (zh) 具有近／遠記憶體晶胞分組之非依電性記憶體裝置及其資料處理方法
KR20130038164A (ko) 반도체 기억 장치 및 반도체 장치
CN100447899C (zh) 具有稳定源线不考虑位线耦合及加载效应的快闪存储设备
CN109841237A (zh) 用于非易失性存储器的利用负阈值感测的感测放大器
CN112071345A (zh) 非电易失性组合存储器件及其操作方法
CN100524523C (zh) 半导体存储器及其操作方法
JP2005116145A5 (da)
US11646065B2 (en) Wear leveling
CN116580736A (zh) 存储器装置、存储器数据写入方法以及存储系统
KR970051327A (ko) 데이타 기억 영역의 속성 데이타를 기억하는 속성 데이타 영역과 데이타 기억 영역을 갖는 비휘발성메모리
US9336868B1 (en) Common plate switching reduction in resistive switching memory devices
CN110556148B (zh) 一种3d nand存储器的读取方法及装置
JPH0785661A (ja) 半導体記憶装置
KR20020075161A (ko) 프로그래밍 가능한 메모리 장치 및 메모리 장치를프로그래밍하기 위한 방법