NO156750B - Fremgangsmaate ved rensing av raasilicium. - Google Patents

Fremgangsmaate ved rensing av raasilicium.

Info

Publication number
NO156750B
NO156750B NO802444A NO802444A NO156750B NO 156750 B NO156750 B NO 156750B NO 802444 A NO802444 A NO 802444A NO 802444 A NO802444 A NO 802444A NO 156750 B NO156750 B NO 156750B
Authority
NO
Norway
Prior art keywords
raasilicium
cleaning
procedure
cleaning raasilicium
Prior art date
Application number
NO802444A
Other languages
English (en)
Other versions
NO802444L (no
NO156750C (no
Inventor
Josef Dietl
Michael Wohlschlaeger
Original Assignee
Consortium Elektrochem Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6078589&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NO156750(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Consortium Elektrochem Ind filed Critical Consortium Elektrochem Ind
Publication of NO802444L publication Critical patent/NO802444L/no
Publication of NO156750B publication Critical patent/NO156750B/no
Publication of NO156750C publication Critical patent/NO156750C/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
NO802444A 1979-08-16 1980-08-15 Fremgangsmaate ved rensing av raasilicium. NO156750C (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792933164 DE2933164A1 (de) 1979-08-16 1979-08-16 Verfahren zum reinigen von rohsilicium

Publications (3)

Publication Number Publication Date
NO802444L NO802444L (no) 1981-02-17
NO156750B true NO156750B (no) 1987-08-10
NO156750C NO156750C (no) 1987-11-18

Family

ID=6078589

Family Applications (1)

Application Number Title Priority Date Filing Date
NO802444A NO156750C (no) 1979-08-16 1980-08-15 Fremgangsmaate ved rensing av raasilicium.

Country Status (6)

Country Link
US (1) US4304763A (no)
EP (1) EP0024614B1 (no)
JP (1) JPS5632319A (no)
CA (1) CA1124991A (no)
DE (2) DE2933164A1 (no)
NO (1) NO156750C (no)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2084978B (en) * 1980-09-26 1984-07-04 Crystal Syst Growing silicon ingots
DE3123536A1 (de) * 1981-06-13 1982-12-30 Basf Farben + Fasern Ag, 2000 Hamburg Bindemittel fuer kathodisch abscheidbare ueberzugsmassen, verfahren zu ihrer herstellung und ihre verwendung
DE3201312C2 (de) * 1982-01-18 1983-12-22 Skw Trostberg Ag, 8223 Trostberg Verfahren zur Reinigung von Silicium
US4388286A (en) * 1982-01-27 1983-06-14 Atlantic Richfield Company Silicon purification
DE3208878A1 (de) * 1982-03-11 1983-09-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Semikontinuierliches verfahren zur herstellung von reinem silicium
NO152551C (no) * 1983-02-07 1985-10-16 Elkem As Fremgangsmaate til fremstilling av rent silisium.
DE3317286A1 (de) * 1983-05-11 1984-11-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur reinigung von silicium durch saeureeinwirkung
US4676968A (en) * 1985-07-24 1987-06-30 Enichem, S.P.A. Melt consolidation of silicon powder
SE460287B (sv) * 1987-09-15 1989-09-25 Casco Nobel Ab Foerfarande foer rening av kisel fraan bor
FR2707619B1 (fr) * 1993-07-01 1995-09-01 Pechiney Electrometallurgie Silicium métallurgique contenant du phosphore et destiné à la préparation des alkyl ou aryl halogénosilanes.
WO1997027143A1 (en) * 1996-01-22 1997-07-31 Jan Reidar Stubergh Production of high purity silicon metal, aluminium, their alloys, silicon carbide and aluminium oxide from alkali alkaline earth alumino silicates
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
NO313132B1 (no) * 1999-12-08 2002-08-19 Elkem Materials Fremgangsmåte for rensing av silisium
WO2004101434A1 (en) * 2003-05-15 2004-11-25 Helmut Engel The metallurgical method of receiving the high purity silicon powder by chemical processing
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP4766837B2 (ja) 2004-03-03 2011-09-07 新日鉄マテリアルズ株式会社 シリコンからのホウ素除去方法
JP5154740B2 (ja) * 2004-09-28 2013-02-27 シャープ株式会社 多結晶シリコン、太陽電池および太陽電池モジュール
JP5100969B2 (ja) * 2005-03-02 2012-12-19 新日鉄住金マテリアルズ株式会社 シリコンからの炭素除去方法
JP4741860B2 (ja) * 2005-03-07 2011-08-10 新日鉄マテリアルズ株式会社 高純度のシリコンの製造方法
JP4856973B2 (ja) * 2005-03-07 2012-01-18 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
JP5140835B2 (ja) * 2005-03-07 2013-02-13 新日鉄住金マテリアルズ株式会社 高純度シリコンの製造方法
JP5100978B2 (ja) * 2005-05-10 2012-12-19 新日鉄住金マテリアルズ株式会社 シリコンの脱リン精製装置及び方法
JP4850501B2 (ja) 2005-12-06 2012-01-11 新日鉄マテリアルズ株式会社 高純度シリコンの製造装置及び製造方法
MX2008011655A (es) * 2006-03-15 2009-01-14 Resc Invest Llc Metodo para hacer silicio para celdas solares y otras aplicaciones.
DE102006027273B3 (de) * 2006-06-09 2007-10-25 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
CN101085678B (zh) * 2006-06-09 2010-11-10 贵阳宝源阳光硅业有限公司 太阳能级硅的制备方法
US7820126B2 (en) * 2006-08-18 2010-10-26 Iosil Energy Corporation Method and apparatus for improving the efficiency of purification and deposition of polycrystalline silicon
FR2908125B1 (fr) * 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
WO2009012583A1 (en) * 2007-07-23 2009-01-29 6N Silicon Inc. Use of acid washing to provide purified silicon crystals
TWI443237B (zh) 2007-10-03 2014-07-01 Silicor Materials Inc 加工矽粉以獲得矽結晶之方法
US20110059002A1 (en) * 2008-04-11 2011-03-10 John Allan Fallavollita Methods and apparatus for recovery of silicon and silicon carbide from spent wafer-sawing slurry
DE102008031388A1 (de) 2008-07-02 2010-01-07 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
DE102009014562A1 (de) 2009-03-16 2010-09-23 Schmid Silicon Technology Gmbh Aufreinigung von metallurgischem Silizium
KR101219759B1 (ko) * 2010-02-24 2013-01-08 연세대학교 산학협력단 슬래그를 이용한 ＭＧ-Ｓｉ중 Ｐ의 환원정련 방법
DE102010011853A1 (de) 2010-03-09 2011-09-15 Schmid Silicon Technology Gmbh Verfahren zur Herstellung von hochreinem Silizium
DE102010015354A1 (de) 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
WO2012000428A1 (en) * 2010-06-29 2012-01-05 Byd Company Limited Method for preparing high purity silicon
CN102151669B (zh) * 2010-11-26 2012-06-20 安阳市凤凰光伏科技有限公司 太阳能硅电池镀膜片碎料的处理方法
DE102010053693A1 (de) * 2010-12-08 2012-06-14 Adensis Gmbh Verfahren zur chemischen Reinigung von metallurgischem Silizium und Vorrichtung zur Durchführung des Verfahrens
CN102001662B (zh) * 2010-12-10 2012-09-19 云南乾元光能产业有限公司 一种去除工业硅中硼、磷及其它杂质的综合利用方法
CN102134076B (zh) * 2011-01-25 2012-09-05 云南乾元光能产业有限公司 一种去除冶金硅中硼杂质的方法
KR101222175B1 (ko) * 2011-03-31 2013-01-14 연세대학교 산학협력단 슬래그와 실리콘의 밀도차이를 이용한 ＭＧ－Ｓｉ중 불순물의 정련 방법
CN102259865B (zh) * 2011-06-01 2013-04-10 宁夏银星多晶硅有限责任公司 一种冶金法多晶硅渣洗除硼工艺
WO2013080576A1 (ja) * 2011-12-01 2013-06-06 シャープ株式会社 金属の製造方法及びその製造物
US10370253B2 (en) 2012-03-09 2019-08-06 Silicio Ferrosolar S.L. Silicon refining device
TWI628145B (zh) * 2013-01-29 2018-07-01 希利柯爾材料股份有限公司 用於純化矽之覆蓋助熔劑及方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH332463A (de) * 1954-09-24 1958-09-15 Lonza Ag Verfahren zur Reinigung von Rohsilizium
CH346532A (de) * 1956-01-19 1960-05-31 Lonza Ag Verfahren zur Herstellung von reinem Siliziummetall
NL109086C (no) * 1956-09-28 1900-01-01
FR1230158A (fr) * 1958-07-03 1960-09-14 Wacker Chemie Gmbh Procédé de purification du silicium
US2992080A (en) * 1958-07-25 1961-07-11 Gen Electric Method of improving the purity of silicon
US3004835A (en) * 1958-11-20 1961-10-17 Mallinckrodt Chemical Works Method of preparing silicon rods
NL251604A (no) * 1959-05-13
US3442662A (en) * 1965-06-22 1969-05-06 Colgate Palmolive Co Food package containing simulated bacon-type food products
DE2722783A1 (de) * 1977-05-20 1978-11-30 Wacker Chemitronic Verfahren zum reinigen von silicium
DE2729464A1 (de) * 1977-06-30 1979-01-11 Consortium Elektrochem Ind Verfahren zum reinigen von silicium

Also Published As

Publication number Publication date
EP0024614B1 (de) 1984-11-21
CA1124991A (en) 1982-06-08
DE2933164A1 (de) 1981-02-26
US4304763A (en) 1981-12-08
DE3069667D1 (en) 1985-01-03
EP0024614A1 (de) 1981-03-11
NO802444L (no) 1981-02-17
JPS5632319A (en) 1981-04-01
NO156750C (no) 1987-11-18

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