JPS5632319A - Method of refining silicon material - Google Patents

Method of refining silicon material

Info

Publication number
JPS5632319A
JPS5632319A JP9998680A JP9998680A JPS5632319A JP S5632319 A JPS5632319 A JP S5632319A JP 9998680 A JP9998680 A JP 9998680A JP 9998680 A JP9998680 A JP 9998680A JP S5632319 A JPS5632319 A JP S5632319A
Authority
JP
Japan
Prior art keywords
silicon material
refining silicon
refining
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9998680A
Other languages
English (en)
Inventor
Deiitoru Yoozefu
Buoorushiyureegeru Mihiaeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consortium fuer Elektrochemische Industrie GmbH
Original Assignee
Consortium fuer Elektrochemische Industrie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6078589&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5632319(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Consortium fuer Elektrochemische Industrie GmbH filed Critical Consortium fuer Elektrochemische Industrie GmbH
Publication of JPS5632319A publication Critical patent/JPS5632319A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP9998680A 1979-08-16 1980-07-23 Method of refining silicon material Pending JPS5632319A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792933164 DE2933164A1 (de) 1979-08-16 1979-08-16 Verfahren zum reinigen von rohsilicium

Publications (1)

Publication Number Publication Date
JPS5632319A true JPS5632319A (en) 1981-04-01

Family

ID=6078589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9998680A Pending JPS5632319A (en) 1979-08-16 1980-07-23 Method of refining silicon material

Country Status (6)

Country Link
US (1) US4304763A (ja)
EP (1) EP0024614B1 (ja)
JP (1) JPS5632319A (ja)
CA (1) CA1124991A (ja)
DE (2) DE2933164A1 (ja)
NO (1) NO156750C (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100339A (ja) * 2004-09-28 2006-04-13 Sharp Corp 多結晶シリコン、太陽電池および太陽電池モジュール
JP2006240914A (ja) * 2005-03-02 2006-09-14 Nippon Steel Corp シリコンからの炭素除去方法
JP2006315879A (ja) * 2005-05-10 2006-11-24 Nippon Steel Corp シリコンの脱リン精製装置及び方法
WO2007066428A1 (ja) 2005-12-06 2007-06-14 Nippon Steel Materials, Co., Ltd. 高純度シリコンの製造装置及び製造方法
US8034151B2 (en) 2004-03-03 2011-10-11 Nippon Steel Corporation Method for removing boron from silicon
CN102259865A (zh) * 2011-06-01 2011-11-30 宁夏银星多晶硅有限责任公司 一种冶金法多晶硅渣洗除硼工艺
KR101219759B1 (ko) * 2010-02-24 2013-01-08 연세대학교 산학협력단 슬래그를 이용한 ＭＧ-Ｓｉ중 Ｐ의 환원정련 방법
JP2013521219A (ja) * 2010-03-09 2013-06-10 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 高純度シリコンの製造方法
JP5223038B1 (ja) * 2011-12-01 2013-06-26 シャープ株式会社 シリコン、結晶シリコン材料及びシリコン太陽電池の製造方法
JP2016511734A (ja) * 2013-01-29 2016-04-21 シリコー マテリアルズ インコーポレイテッド シリコン精製のためのカバーフラックスおよび方法

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2084978B (en) * 1980-09-26 1984-07-04 Crystal Syst Growing silicon ingots
DE3123536A1 (de) * 1981-06-13 1982-12-30 Basf Farben + Fasern Ag, 2000 Hamburg Bindemittel fuer kathodisch abscheidbare ueberzugsmassen, verfahren zu ihrer herstellung und ihre verwendung
DE3201312C2 (de) * 1982-01-18 1983-12-22 Skw Trostberg Ag, 8223 Trostberg Verfahren zur Reinigung von Silicium
US4388286A (en) * 1982-01-27 1983-06-14 Atlantic Richfield Company Silicon purification
DE3208878A1 (de) * 1982-03-11 1983-09-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Semikontinuierliches verfahren zur herstellung von reinem silicium
NO152551C (no) * 1983-02-07 1985-10-16 Elkem As Fremgangsmaate til fremstilling av rent silisium.
DE3317286A1 (de) * 1983-05-11 1984-11-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur reinigung von silicium durch saeureeinwirkung
US4676968A (en) * 1985-07-24 1987-06-30 Enichem, S.P.A. Melt consolidation of silicon powder
SE460287B (sv) * 1987-09-15 1989-09-25 Casco Nobel Ab Foerfarande foer rening av kisel fraan bor
FR2707619B1 (fr) * 1993-07-01 1995-09-01 Pechiney Electrometallurgie Silicium métallurgique contenant du phosphore et destiné à la préparation des alkyl ou aryl halogénosilanes.
AU1560097A (en) * 1996-01-22 1997-08-20 Jan Reidar Stubergh Production of high purity silicon metal, aluminium, their alloys, silicon carbide and aluminium oxide from alkali alkaline earth alumino silicates
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
NO313132B1 (no) * 1999-12-08 2002-08-19 Elkem Materials Fremgangsmåte for rensing av silisium
WO2004101434A1 (en) * 2003-05-15 2004-11-25 Helmut Engel The metallurgical method of receiving the high purity silicon powder by chemical processing
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP5140835B2 (ja) * 2005-03-07 2013-02-13 新日鉄住金マテリアルズ株式会社 高純度シリコンの製造方法
JP4856973B2 (ja) * 2005-03-07 2012-01-18 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
JP4741860B2 (ja) * 2005-03-07 2011-08-10 新日鉄マテリアルズ株式会社 高純度のシリコンの製造方法
BRPI0709288A2 (pt) * 2006-03-15 2011-07-05 Reaction Sciances Inc método para produzir silìcio tendo alta pureza, método para preparar sìlicio de alta pureza, método para prepara sìlica de alta pureza e método para purificar silìcio de baixo grau para silìcio de alto grau
CN101085678B (zh) * 2006-06-09 2010-11-10 贵阳宝源阳光硅业有限公司 太阳能级硅的制备方法
DE102006027273B3 (de) * 2006-06-09 2007-10-25 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
US7820126B2 (en) * 2006-08-18 2010-10-26 Iosil Energy Corporation Method and apparatus for improving the efficiency of purification and deposition of polycrystalline silicon
FR2908125B1 (fr) * 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
KR101338281B1 (ko) 2007-07-23 2013-12-09 실리코르 머티리얼즈 인코포레이티드 산 세척을 이용한 정제된 실리콘 결정의 제조 방법
US7959730B2 (en) 2007-10-03 2011-06-14 6N Silicon Inc. Method for processing silicon powder to obtain silicon crystals
WO2009126922A2 (en) * 2008-04-11 2009-10-15 Iosil Energy Corp. Methods and apparatus for recovery of silicon and silicon carbide from spent wafer-sawing slurry
DE102008031388A1 (de) 2008-07-02 2010-01-07 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
DE102009014562A1 (de) 2009-03-16 2010-09-23 Schmid Silicon Technology Gmbh Aufreinigung von metallurgischem Silizium
DE102010015354A1 (de) 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
WO2012000428A1 (en) * 2010-06-29 2012-01-05 Byd Company Limited Method for preparing high purity silicon
CN102151669B (zh) * 2010-11-26 2012-06-20 安阳市凤凰光伏科技有限公司 太阳能硅电池镀膜片碎料的处理方法
DE102010053693A1 (de) * 2010-12-08 2012-06-14 Adensis Gmbh Verfahren zur chemischen Reinigung von metallurgischem Silizium und Vorrichtung zur Durchführung des Verfahrens
CN102001662B (zh) * 2010-12-10 2012-09-19 云南乾元光能产业有限公司 一种去除工业硅中硼、磷及其它杂质的综合利用方法
CN102134076B (zh) * 2011-01-25 2012-09-05 云南乾元光能产业有限公司 一种去除冶金硅中硼杂质的方法
KR101222175B1 (ko) * 2011-03-31 2013-01-14 연세대학교 산학협력단 슬래그와 실리콘의 밀도차이를 이용한 ＭＧ－Ｓｉ중 불순물의 정련 방법
SI2824071T1 (sl) 2012-03-09 2018-10-30 Silicio Ferrosolar S.L. Naprava za rafiniranje silikona

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144819A (en) * 1977-05-20 1978-12-16 Wacker Chemitronic Method of purifying silicon

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH332463A (de) * 1954-09-24 1958-09-15 Lonza Ag Verfahren zur Reinigung von Rohsilizium
CH346532A (de) * 1956-01-19 1960-05-31 Lonza Ag Verfahren zur Herstellung von reinem Siliziummetall
NL109086C (ja) * 1956-09-28 1900-01-01
FR1230158A (fr) * 1958-07-03 1960-09-14 Wacker Chemie Gmbh Procédé de purification du silicium
US2992080A (en) * 1958-07-25 1961-07-11 Gen Electric Method of improving the purity of silicon
US3004835A (en) * 1958-11-20 1961-10-17 Mallinckrodt Chemical Works Method of preparing silicon rods
LU38582A1 (ja) * 1959-05-13
US3442662A (en) * 1965-06-22 1969-05-06 Colgate Palmolive Co Food package containing simulated bacon-type food products
DE2729464A1 (de) * 1977-06-30 1979-01-11 Consortium Elektrochem Ind Verfahren zum reinigen von silicium

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144819A (en) * 1977-05-20 1978-12-16 Wacker Chemitronic Method of purifying silicon

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034151B2 (en) 2004-03-03 2011-10-11 Nippon Steel Corporation Method for removing boron from silicon
JP2006100339A (ja) * 2004-09-28 2006-04-13 Sharp Corp 多結晶シリコン、太陽電池および太陽電池モジュール
JP2006240914A (ja) * 2005-03-02 2006-09-14 Nippon Steel Corp シリコンからの炭素除去方法
JP2006315879A (ja) * 2005-05-10 2006-11-24 Nippon Steel Corp シリコンの脱リン精製装置及び方法
WO2007066428A1 (ja) 2005-12-06 2007-06-14 Nippon Steel Materials, Co., Ltd. 高純度シリコンの製造装置及び製造方法
JP2007153693A (ja) * 2005-12-06 2007-06-21 Nippon Steel Materials Co Ltd 高純度シリコンの製造装置及び製造方法
US8038973B2 (en) 2005-12-06 2011-10-18 Nippon Steel Materials Co., Ltd. High purity silicon production system and production method
KR101219759B1 (ko) * 2010-02-24 2013-01-08 연세대학교 산학협력단 슬래그를 이용한 ＭＧ-Ｓｉ중 Ｐ의 환원정련 방법
JP2013521219A (ja) * 2010-03-09 2013-06-10 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 高純度シリコンの製造方法
CN102259865A (zh) * 2011-06-01 2011-11-30 宁夏银星多晶硅有限责任公司 一种冶金法多晶硅渣洗除硼工艺
JP5223038B1 (ja) * 2011-12-01 2013-06-26 シャープ株式会社 シリコン、結晶シリコン材料及びシリコン太陽電池の製造方法
JP2016511734A (ja) * 2013-01-29 2016-04-21 シリコー マテリアルズ インコーポレイテッド シリコン精製のためのカバーフラックスおよび方法

Also Published As

Publication number Publication date
DE3069667D1 (en) 1985-01-03
US4304763A (en) 1981-12-08
NO156750C (no) 1987-11-18
EP0024614B1 (de) 1984-11-21
NO156750B (no) 1987-08-10
DE2933164A1 (de) 1981-02-26
CA1124991A (en) 1982-06-08
NO802444L (no) 1981-02-17
EP0024614A1 (de) 1981-03-11

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