GB2084978B - Growing silicon ingots - Google Patents

Growing silicon ingots

Info

Publication number
GB2084978B
GB2084978B GB8126055A GB8126055A GB2084978B GB 2084978 B GB2084978 B GB 2084978B GB 8126055 A GB8126055 A GB 8126055A GB 8126055 A GB8126055 A GB 8126055A GB 2084978 B GB2084978 B GB 2084978B
Authority
GB
United Kingdom
Prior art keywords
growing silicon
silicon ingots
ingots
growing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8126055A
Other versions
GB2084978A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CRYSTAL SYSTEMS Inc
Crystal Systems Corp
Original Assignee
CRYSTAL SYSTEMS Inc
Crystal Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CRYSTAL SYSTEMS Inc, Crystal Systems Corp filed Critical CRYSTAL SYSTEMS Inc
Publication of GB2084978A publication Critical patent/GB2084978A/en
Application granted granted Critical
Publication of GB2084978B publication Critical patent/GB2084978B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
    • F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
    • F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Electroplating Methods And Accessories (AREA)
GB8126055A 1980-09-26 1981-08-26 Growing silicon ingots Expired GB2084978B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19126080A 1980-09-26 1980-09-26

Publications (2)

Publication Number Publication Date
GB2084978A GB2084978A (en) 1982-04-21
GB2084978B true GB2084978B (en) 1984-07-04

Family

ID=22704771

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8126055A Expired GB2084978B (en) 1980-09-26 1981-08-26 Growing silicon ingots

Country Status (9)

Country Link
JP (1) JPS5785667A (en)
BE (1) BE890508A (en)
CA (1) CA1193522A (en)
CH (1) CH653714A5 (en)
DE (1) DE3138227A1 (en)
FR (1) FR2491095B1 (en)
GB (1) GB2084978B (en)
IT (1) IT1144865B (en)
NL (1) NL8104333A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2908125B1 (en) * 2006-11-02 2009-11-20 Commissariat Energie Atomique PROCESS FOR PURIFYING METALLURGICAL SILICON BY DIRECTED SOLIDIFICATION
TW201012988A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Gas recirculation heat exchanger for casting silicon
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933164A1 (en) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind METHOD FOR CLEANING RAW SILICON

Also Published As

Publication number Publication date
IT8168211A0 (en) 1981-09-16
IT1144865B (en) 1986-10-29
DE3138227A1 (en) 1982-07-22
FR2491095B1 (en) 1986-08-22
GB2084978A (en) 1982-04-21
JPS5785667A (en) 1982-05-28
CH653714A5 (en) 1986-01-15
BE890508A (en) 1982-01-18
NL8104333A (en) 1982-04-16
FR2491095A1 (en) 1982-04-02
CA1193522A (en) 1985-09-17

Similar Documents

Publication Publication Date Title
JPS56169118A (en) Silicon manufacture
JPS5759330A (en) Silicon structure
GB2088812B (en) Flower packs
GB2104410B (en) Crystal growing
GB8619455D0 (en) Single crystal ingots of silicon
GB2132911B (en) Crucibles for growing monocrystals
GB2036708B (en) Proscess for purifying silicon
GB2068351B (en) Silicon carbide
GB2103105B (en) Crystal growing
JPS5622620A (en) Silicon purification
GB8505713D0 (en) Silicon carbide
GB8300787D0 (en) Iridium-rhenium crucible
GB2125705B (en) Growing semiconductor single crystals
GB2084435B (en) Crucible assembly
GB8520574D0 (en) Monocrystal growing apparatus
JPS5789451A (en) Monocrystalline alloy
GB2088754B (en) Oriented silicon steel
GB8311008D0 (en) Growing plants
AU6661781A (en) Casting plant
GB2085702B (en) Growing trays
DE3367868D1 (en) Continuous-casting plant
GB2084978B (en) Growing silicon ingots
GB2021457A (en) Ingot moulds
GB2052461B (en) Silicon purification method
GB2079175B (en) Growing crystals

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee