BE890508A - IMPROVED PROCESS FOR PRODUCING PRACTICALLY SINGLE CRYSTAL SILICON INGOTS - Google Patents

IMPROVED PROCESS FOR PRODUCING PRACTICALLY SINGLE CRYSTAL SILICON INGOTS

Info

Publication number
BE890508A
BE890508A BE0/206076A BE206076A BE890508A BE 890508 A BE890508 A BE 890508A BE 0/206076 A BE0/206076 A BE 0/206076A BE 206076 A BE206076 A BE 206076A BE 890508 A BE890508 A BE 890508A
Authority
BE
Belgium
Prior art keywords
single crystal
crystal silicon
improved process
silicon ingots
practically single
Prior art date
Application number
BE0/206076A
Other languages
French (fr)
Inventor
F Schmid
C P Khattak
Original Assignee
Crystal Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Syst filed Critical Crystal Syst
Publication of BE890508A publication Critical patent/BE890508A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
    • F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
    • F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroplating Methods And Accessories (AREA)
BE0/206076A 1980-09-26 1981-09-25 IMPROVED PROCESS FOR PRODUCING PRACTICALLY SINGLE CRYSTAL SILICON INGOTS BE890508A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19126080A 1980-09-26 1980-09-26

Publications (1)

Publication Number Publication Date
BE890508A true BE890508A (en) 1982-01-18

Family

ID=22704771

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/206076A BE890508A (en) 1980-09-26 1981-09-25 IMPROVED PROCESS FOR PRODUCING PRACTICALLY SINGLE CRYSTAL SILICON INGOTS

Country Status (9)

Country Link
JP (1) JPS5785667A (en)
BE (1) BE890508A (en)
CA (1) CA1193522A (en)
CH (1) CH653714A5 (en)
DE (1) DE3138227A1 (en)
FR (1) FR2491095B1 (en)
GB (1) GB2084978B (en)
IT (1) IT1144865B (en)
NL (1) NL8104333A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2908125B1 (en) * 2006-11-02 2009-11-20 Commissariat Energie Atomique PROCESS FOR PURIFYING METALLURGICAL SILICON BY DIRECTED SOLIDIFICATION
TW201012988A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Gas recirculation heat exchanger for casting silicon
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933164A1 (en) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind METHOD FOR CLEANING RAW SILICON

Also Published As

Publication number Publication date
GB2084978A (en) 1982-04-21
IT1144865B (en) 1986-10-29
JPS5785667A (en) 1982-05-28
CA1193522A (en) 1985-09-17
CH653714A5 (en) 1986-01-15
DE3138227A1 (en) 1982-07-22
NL8104333A (en) 1982-04-16
GB2084978B (en) 1984-07-04
FR2491095B1 (en) 1986-08-22
IT8168211A0 (en) 1981-09-16
FR2491095A1 (en) 1982-04-02

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: CRYSTAL SYSTEMS INC.

Effective date: 19880930