IT1144865B - METHOD FOR GROWING SILICON INGOTTS - Google Patents

METHOD FOR GROWING SILICON INGOTTS

Info

Publication number
IT1144865B
IT1144865B IT68211/81A IT6821181A IT1144865B IT 1144865 B IT1144865 B IT 1144865B IT 68211/81 A IT68211/81 A IT 68211/81A IT 6821181 A IT6821181 A IT 6821181A IT 1144865 B IT1144865 B IT 1144865B
Authority
IT
Italy
Prior art keywords
ingotts
growing silicon
growing
silicon
silicon ingotts
Prior art date
Application number
IT68211/81A
Other languages
Italian (it)
Other versions
IT8168211A0 (en
Inventor
Frederick Schmid
Chandra P Khattak
Original Assignee
Crystal Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Syst filed Critical Crystal Syst
Publication of IT8168211A0 publication Critical patent/IT8168211A0/en
Application granted granted Critical
Publication of IT1144865B publication Critical patent/IT1144865B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
    • F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
    • F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroplating Methods And Accessories (AREA)
IT68211/81A 1980-09-26 1981-09-16 METHOD FOR GROWING SILICON INGOTTS IT1144865B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19126080A 1980-09-26 1980-09-26

Publications (2)

Publication Number Publication Date
IT8168211A0 IT8168211A0 (en) 1981-09-16
IT1144865B true IT1144865B (en) 1986-10-29

Family

ID=22704771

Family Applications (1)

Application Number Title Priority Date Filing Date
IT68211/81A IT1144865B (en) 1980-09-26 1981-09-16 METHOD FOR GROWING SILICON INGOTTS

Country Status (9)

Country Link
JP (1) JPS5785667A (en)
BE (1) BE890508A (en)
CA (1) CA1193522A (en)
CH (1) CH653714A5 (en)
DE (1) DE3138227A1 (en)
FR (1) FR2491095B1 (en)
GB (1) GB2084978B (en)
IT (1) IT1144865B (en)
NL (1) NL8104333A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2908125B1 (en) * 2006-11-02 2009-11-20 Commissariat Energie Atomique PROCESS FOR PURIFYING METALLURGICAL SILICON BY DIRECTED SOLIDIFICATION
TW201012988A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Gas recirculation heat exchanger for casting silicon
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933164A1 (en) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind METHOD FOR CLEANING RAW SILICON

Also Published As

Publication number Publication date
CH653714A5 (en) 1986-01-15
GB2084978A (en) 1982-04-21
IT8168211A0 (en) 1981-09-16
BE890508A (en) 1982-01-18
DE3138227A1 (en) 1982-07-22
FR2491095B1 (en) 1986-08-22
GB2084978B (en) 1984-07-04
JPS5785667A (en) 1982-05-28
NL8104333A (en) 1982-04-16
FR2491095A1 (en) 1982-04-02
CA1193522A (en) 1985-09-17

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