BE890508A - Procede ameliore pour produire des lingots de silicium pratiquement monocristallin - Google Patents

Procede ameliore pour produire des lingots de silicium pratiquement monocristallin

Info

Publication number
BE890508A
BE890508A BE0/206076A BE206076A BE890508A BE 890508 A BE890508 A BE 890508A BE 0/206076 A BE0/206076 A BE 0/206076A BE 206076 A BE206076 A BE 206076A BE 890508 A BE890508 A BE 890508A
Authority
BE
Belgium
Prior art keywords
single crystal
crystal silicon
improved process
silicon ingots
practically single
Prior art date
Application number
BE0/206076A
Other languages
English (en)
Inventor
F Schmid
C P Khattak
Original Assignee
Crystal Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Syst filed Critical Crystal Syst
Publication of BE890508A publication Critical patent/BE890508A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
    • F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
    • F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Electroplating Methods And Accessories (AREA)
BE0/206076A 1980-09-26 1981-09-25 Procede ameliore pour produire des lingots de silicium pratiquement monocristallin BE890508A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19126080A 1980-09-26 1980-09-26

Publications (1)

Publication Number Publication Date
BE890508A true BE890508A (fr) 1982-01-18

Family

ID=22704771

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/206076A BE890508A (fr) 1980-09-26 1981-09-25 Procede ameliore pour produire des lingots de silicium pratiquement monocristallin

Country Status (9)

Country Link
JP (1) JPS5785667A (fr)
BE (1) BE890508A (fr)
CA (1) CA1193522A (fr)
CH (1) CH653714A5 (fr)
DE (1) DE3138227A1 (fr)
FR (1) FR2491095B1 (fr)
GB (1) GB2084978B (fr)
IT (1) IT1144865B (fr)
NL (1) NL8104333A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2908125B1 (fr) * 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
TW201012988A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Gas recirculation heat exchanger for casting silicon
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933164A1 (de) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind Verfahren zum reinigen von rohsilicium

Also Published As

Publication number Publication date
NL8104333A (nl) 1982-04-16
JPS5785667A (en) 1982-05-28
CH653714A5 (de) 1986-01-15
IT1144865B (it) 1986-10-29
GB2084978B (en) 1984-07-04
IT8168211A0 (it) 1981-09-16
CA1193522A (fr) 1985-09-17
FR2491095A1 (fr) 1982-04-02
FR2491095B1 (fr) 1986-08-22
GB2084978A (en) 1982-04-21
DE3138227A1 (de) 1982-07-22

Similar Documents

Publication Publication Date Title
FR2538415B1 (fr) Creuset pour tirer des monocristaux
GB2178420B (en) Apparatus for the production of single or quasi single crystal ingots of silicon
RO82367A (fr) Procede pour la preparation des composes antihypercolesterolemiques
RO82162A (fr) Procede pour la preparation des aminothiadiazoles
RO75757A (fr) Procede pour la purification des composes vinylaromatiques
RO90457A (fr) Procede pour la preparation des n-heterocyclul 4-piperidinamines
RO86698A (fr) Procede pour la preparation des (1-piperidinylalkyle)-pyrhimidinone
FR2547571B1 (fr) Procede et appareil pour produire du silicium de haute purete
RO86511A (fr) Procede pour la preparation des beta-lactames
RO79932A (fr) Procede pour la preparation des 3-amino-sidnoimines substitues
RO73516A (fr) Procede pour la preparation des glycosides de 2-desoxystreptamine
RO86646A (fr) Procede pour la preparation des o0ymethers
RO92200A (fr) Procede pour la preparation des s-benzylcarbamates
BE890508A (fr) Procede ameliore pour produire des lingots de silicium pratiquement monocristallin
BE877195A (fr) Procede pour l'elimination selective des impuretes
RO78638A (fr) Procede pour la preparation des n-propargylanilines substitues
FR2342098A1 (fr) Procede pour la croissance selective de silicium microcristallin
RO88202A (fr) Procede pour la preparation des spiro-3-heteroazolone
RO92966A (fr) Procede pour la preparation des pyrazolines
RO82087A (fr) Procede pour la preparation de3-pycoline
RO83438A (fr) Procede pour la preparation des bis-tetrazolmethylthioles
FR2452532B1 (fr) Procede pour produire des monocristaux de ferrite
RO81684A (fr) Procede pour la preparation des benzenamines
RO81694A (fr) Procede pour la preparation des 2-haloacetamidomethylenethers subtitus
RO74147A (fr) Procede pour la preparation des triazolothienodiazepin-1-ones

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: CRYSTAL SYSTEMS INC.

Effective date: 19880930