NL9100536A - Halfgeleider-geheugeninrichtingen. - Google Patents
Halfgeleider-geheugeninrichtingen. Download PDFInfo
- Publication number
- NL9100536A NL9100536A NL9100536A NL9100536A NL9100536A NL 9100536 A NL9100536 A NL 9100536A NL 9100536 A NL9100536 A NL 9100536A NL 9100536 A NL9100536 A NL 9100536A NL 9100536 A NL9100536 A NL 9100536A
- Authority
- NL
- Netherlands
- Prior art keywords
- bit line
- semiconductor memory
- memory devices
- contacts
- bit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR900004190 | 1990-03-28 | ||
| KR1019900004190A KR920007358B1 (ko) | 1990-03-28 | 1990-03-28 | 고집적 메모리 셀 및 코아 어레이 구조 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL9100536A true NL9100536A (nl) | 1991-10-16 |
Family
ID=19297455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9100536A NL9100536A (nl) | 1990-03-28 | 1991-03-26 | Halfgeleider-geheugeninrichtingen. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0774266A (ko) |
| KR (1) | KR920007358B1 (ko) |
| DE (1) | DE4110155A1 (ko) |
| FR (1) | FR2660475A1 (ko) |
| GB (1) | GB2242568A (ko) |
| NL (1) | NL9100536A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007013011A (ja) * | 2005-07-01 | 2007-01-18 | Seiko Epson Corp | 強誘電体メモリ装置及び表示用駆動ｉｃ |
| CN113053897B (zh) * | 2021-03-04 | 2022-06-17 | 长鑫存储技术有限公司 | 存储器及其制备方法 |
| US11877441B2 (en) | 2021-03-04 | 2024-01-16 | Changxin Memory Technologies, Inc. | Memory and fabricating method thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2743619A1 (de) * | 1977-09-28 | 1979-03-29 | Siemens Ag | Halbleiter-speicherelement und verfahren zu seiner herstellung |
| US4319342A (en) * | 1979-12-26 | 1982-03-09 | International Business Machines Corporation | One device field effect transistor (FET) AC stable random access memory (RAM) array |
| JPS57208691A (en) * | 1981-06-15 | 1982-12-21 | Mitsubishi Electric Corp | Semiconductor memory |
| JP2682021B2 (ja) * | 1988-06-29 | 1997-11-26 | 富士通株式会社 | 半導体メモリ装置 |
| JPH0276258A (ja) * | 1988-09-13 | 1990-03-15 | Fujitsu Ltd | 半導体記憶装置 |
| JP2681285B2 (ja) * | 1988-09-19 | 1997-11-26 | 富士通株式会社 | 半導体記憶装置 |
| JP2974252B2 (ja) * | 1989-08-19 | 1999-11-10 | 富士通株式会社 | 半導体記憶装置 |
-
1990
- 1990-03-28 KR KR1019900004190A patent/KR920007358B1/ko not_active IP Right Cessation
-
1991
- 1991-03-22 FR FR9103522A patent/FR2660475A1/fr active Pending
- 1991-03-26 NL NL9100536A patent/NL9100536A/nl not_active Application Discontinuation
- 1991-03-27 JP JP3063190A patent/JPH0774266A/ja active Pending
- 1991-03-27 GB GB9106576A patent/GB2242568A/en not_active Withdrawn
- 1991-03-27 DE DE4110155A patent/DE4110155A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| DE4110155A1 (de) | 1991-10-02 |
| FR2660475A1 (fr) | 1991-10-04 |
| KR920007358B1 (ko) | 1992-08-31 |
| GB9106576D0 (en) | 1991-05-15 |
| JPH0774266A (ja) | 1995-03-17 |
| GB2242568A (en) | 1991-10-02 |
| KR910017640A (ko) | 1991-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BV | The patent application has lapsed |