NL8902372A - Werkwijze voor het vervaardigen van een veldeffecttransistor en halfgeleiderelement. - Google Patents
Werkwijze voor het vervaardigen van een veldeffecttransistor en halfgeleiderelement. Download PDFInfo
- Publication number
- NL8902372A NL8902372A NL8902372A NL8902372A NL8902372A NL 8902372 A NL8902372 A NL 8902372A NL 8902372 A NL8902372 A NL 8902372A NL 8902372 A NL8902372 A NL 8902372A NL 8902372 A NL8902372 A NL 8902372A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor element
- channel
- insulating layer
- applying
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 230000005669 field effect Effects 0.000 title description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 2
- 230000005855 radiation Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8902372A NL8902372A (nl) | 1989-09-21 | 1989-09-21 | Werkwijze voor het vervaardigen van een veldeffecttransistor en halfgeleiderelement. |
| PCT/EP1990/001641 WO1991004574A1 (fr) | 1989-09-21 | 1990-09-20 | Procede de fabrication d'un transistor a effet de champ et d'un element semiconducteur |
| EP90202500A EP0418983A1 (fr) | 1989-09-21 | 1990-09-20 | Procédé de fabrication d'un transistor à effet de champ et un élément semi-conducteur |
| JP51286890A JPH04501937A (ja) | 1989-09-21 | 1990-09-20 | 電界効果トランジスタ及び半導体素子の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8902372A NL8902372A (nl) | 1989-09-21 | 1989-09-21 | Werkwijze voor het vervaardigen van een veldeffecttransistor en halfgeleiderelement. |
| NL8902372 | 1989-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8902372A true NL8902372A (nl) | 1991-04-16 |
Family
ID=19855347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8902372A NL8902372A (nl) | 1989-09-21 | 1989-09-21 | Werkwijze voor het vervaardigen van een veldeffecttransistor en halfgeleiderelement. |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0418983A1 (fr) |
| JP (1) | JPH04501937A (fr) |
| NL (1) | NL8902372A (fr) |
| WO (1) | WO1991004574A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585531A (zh) * | 2018-11-29 | 2019-04-05 | 中国电子科技集团公司第四十七研究所 | 抗总剂量效应的mos场效应管 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960002088B1 (ko) * | 1993-02-17 | 1996-02-10 | 삼성전자주식회사 | 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법 |
| US5705405A (en) * | 1994-09-30 | 1998-01-06 | Sgs-Thomson Microelectronics, Inc. | Method of making the film transistor with all-around gate electrode |
| JPH118390A (ja) * | 1997-06-18 | 1999-01-12 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP4998637B1 (ja) | 2011-06-07 | 2012-08-15 | オムロン株式会社 | 画像処理装置、情報生成装置、画像処理方法、情報生成方法、制御プログラムおよび記録媒体 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4279069A (en) * | 1979-02-21 | 1981-07-21 | Rockwell International Corporation | Fabrication of a nonvolatile memory array device |
| EP0077737A3 (fr) * | 1981-10-19 | 1984-11-07 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Dispositif à effet de champ à basse capacité |
-
1989
- 1989-09-21 NL NL8902372A patent/NL8902372A/nl not_active Application Discontinuation
-
1990
- 1990-09-20 WO PCT/EP1990/001641 patent/WO1991004574A1/fr unknown
- 1990-09-20 EP EP90202500A patent/EP0418983A1/fr not_active Withdrawn
- 1990-09-20 JP JP51286890A patent/JPH04501937A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585531A (zh) * | 2018-11-29 | 2019-04-05 | 中国电子科技集团公司第四十七研究所 | 抗总剂量效应的mos场效应管 |
| CN109585531B (zh) * | 2018-11-29 | 2022-03-15 | 中国电子科技集团公司第四十七研究所 | 抗总剂量效应的mos场效应管 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0418983A1 (fr) | 1991-03-27 |
| WO1991004574A1 (fr) | 1991-04-04 |
| JPH04501937A (ja) | 1992-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |