NL8703021A - Geregelde cmos-substraatspanningsgenerator. - Google Patents

Geregelde cmos-substraatspanningsgenerator. Download PDF

Info

Publication number
NL8703021A
NL8703021A NL8703021A NL8703021A NL8703021A NL 8703021 A NL8703021 A NL 8703021A NL 8703021 A NL8703021 A NL 8703021A NL 8703021 A NL8703021 A NL 8703021A NL 8703021 A NL8703021 A NL 8703021A
Authority
NL
Netherlands
Prior art keywords
substrate
pmos
gate
voltage
substrate voltage
Prior art date
Application number
NL8703021A
Other languages
English (en)
Dutch (nl)
Original Assignee
Jenoptik Jena Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DD29830186A external-priority patent/DD256001B5/de
Priority claimed from DD30128087A external-priority patent/DD259486A1/de
Priority claimed from DD30128187A external-priority patent/DD259487A1/de
Application filed by Jenoptik Jena Gmbh filed Critical Jenoptik Jena Gmbh
Publication of NL8703021A publication Critical patent/NL8703021A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0222—Charge pumping, substrate bias generation structures
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
NL8703021A 1986-12-23 1987-12-14 Geregelde cmos-substraatspanningsgenerator. NL8703021A (nl)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DD29830186A DD256001B5 (de) 1986-12-23 1986-12-23 Geregelter cmos-substratspannungsgenerator
DD29830186 1986-12-23
DD30128187 1987-03-31
DD30128087 1987-03-31
DD30128087A DD259486A1 (de) 1987-03-31 1987-03-31 Messfuehler fuer geregelte substratspannungsgeneratoren
DD30128187A DD259487A1 (de) 1987-03-31 1987-03-31 Messfuehler fuer geregelte substratspannungsgeneratoren

Publications (1)

Publication Number Publication Date
NL8703021A true NL8703021A (nl) 1988-07-18

Family

ID=27179896

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8703021A NL8703021A (nl) 1986-12-23 1987-12-14 Geregelde cmos-substraatspanningsgenerator.

Country Status (3)

Country Link
US (1) US4843256A (ja)
DE (1) DE8714849U1 (ja)
NL (1) NL8703021A (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2542022B2 (ja) * 1987-12-18 1996-10-09 沖電気工業株式会社 電界効果トランジスタ負荷回路
JPH0817033B2 (ja) * 1988-12-08 1996-02-21 三菱電機株式会社 基板バイアス電位発生回路
JP2635789B2 (ja) * 1989-01-17 1997-07-30 株式会社東芝 信号遅延回路及び該回路を用いたクロック信号発生回路
US5003197A (en) * 1989-01-19 1991-03-26 Xicor, Inc. Substrate bias voltage generating and regulating apparatus
JP2780365B2 (ja) * 1989-08-14 1998-07-30 日本電気株式会社 基板電位発生回路
JP2557271B2 (ja) * 1990-04-06 1996-11-27 三菱電機株式会社 内部降圧電源電圧を有する半導体装置における基板電圧発生回路
GB9007790D0 (en) * 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
JP2805991B2 (ja) * 1990-06-25 1998-09-30 ソニー株式会社 基板バイアス発生回路
US5039877A (en) * 1990-08-30 1991-08-13 Micron Technology, Inc. Low current substrate bias generator
JPH04129264A (ja) * 1990-09-20 1992-04-30 Fujitsu Ltd 半導体集積回路
US5179297A (en) * 1990-10-22 1993-01-12 Gould Inc. CMOS self-adjusting bias generator for high voltage drivers
FR2668668B1 (fr) * 1990-10-30 1994-02-04 Samsung Electronics Co Ltd Generateur de tension de substrat pour un dispositif a semiconducteurs.
JP3128262B2 (ja) * 1991-05-28 2001-01-29 株式会社東芝 半導体集積回路装置
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
US5268871A (en) * 1991-10-03 1993-12-07 International Business Machines Corporation Power supply tracking regulator for a memory array
JP2937591B2 (ja) * 1991-12-09 1999-08-23 沖電気工業株式会社 基板バイアス発生回路
KR950002726B1 (ko) * 1992-03-30 1995-03-24 삼성전자주식회사 기판전압 발생기의 전하 펌프 회로
JP2755047B2 (ja) * 1992-06-24 1998-05-20 日本電気株式会社 昇圧電位発生回路
US5412257A (en) * 1992-10-20 1995-05-02 United Memories, Inc. High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump
US5553030A (en) * 1993-09-10 1996-09-03 Intel Corporation Method and apparatus for controlling the output voltage provided by a charge pump circuit
US5461591A (en) * 1993-12-02 1995-10-24 Goldstar Electron Co., Ltd. Voltage generator for semiconductor memory device
US5642073A (en) * 1993-12-06 1997-06-24 Micron Technology, Inc. System powered with inter-coupled charge pumps
US5493249A (en) * 1993-12-06 1996-02-20 Micron Technology, Inc. System powered with inter-coupled charge pumps
JP3292417B2 (ja) * 1994-02-15 2002-06-17 三菱電機株式会社 半導体装置
KR102401602B1 (ko) * 2017-05-08 2022-05-25 삼성전자주식회사 셀들의 전원 전압 변화 및 셀들간 영향을 고려하는 집적 회로의 설계 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3794862A (en) * 1972-04-05 1974-02-26 Rockwell International Corp Substrate bias circuit
JPS5632758A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Substrate bias generating circuit
US4336466A (en) * 1980-06-30 1982-06-22 Inmos Corporation Substrate bias generator
JPS58105563A (ja) * 1981-12-17 1983-06-23 Mitsubishi Electric Corp 基板バイアス発生回路
US4591738A (en) * 1983-10-27 1986-05-27 International Business Machines Corporation Charge pumping circuit
JPS60179998A (ja) * 1984-02-28 1985-09-13 Fujitsu Ltd 電圧検出回路
US4670669A (en) * 1984-08-13 1987-06-02 International Business Machines Corporation Charge pumping structure for a substrate bias generator
JPS6159688A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
US4663183A (en) * 1984-09-10 1987-05-05 Energy Conversion Devices, Inc. Glow discharge method of applying a carbon coating onto a substrate
JPS6199363A (ja) * 1984-10-19 1986-05-17 Mitsubishi Electric Corp 基板電位発生回路

Also Published As

Publication number Publication date
US4843256A (en) 1989-06-27
DE8714849U1 (ja) 1987-12-23

Similar Documents

Publication Publication Date Title
NL8703021A (nl) Geregelde cmos-substraatspanningsgenerator.
US4739191A (en) Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
EP0735677B1 (en) Oscillator circuit having oscillation frequency independent from the supply voltage value
US6236249B1 (en) Power-on reset circuit for a high density integrated circuit
US4071783A (en) Enhancement/depletion mode field effect transistor driver
US4321661A (en) Apparatus for charging a capacitor
CA1042520A (en) Fet load gate compensator
NL194688C (nl) Instelspanningsbron.
US4208595A (en) Substrate generator
GB2214017A (en) Ring oscillator
EP0129580A1 (en) Clock pulse-shaping circuit
KR950004265A (ko) 충전 펌프
KR100218078B1 (ko) 외부전원전압의 변동이나 환경온도의 변화에 대한 출력전압의 변동을 억제할 수 있는 기판전위발생회로
KR960032669A (ko) 반도체 집적 회로 및 편차 보상 시스템
NL8802390A (nl) Schakeling voor het opwekken van een golfvorm met tweevoudige helling.
US5552719A (en) Output buffer circuit having gate voltage control circuit of gate current controlling transistor connected to output transistor
US4469962A (en) High-speed MESFET circuits using depletion mode MESFET signal transmission gates
US5644215A (en) Circuit and method for regulating a voltage
US4472645A (en) Clock circuit for generating non-overlapping pulses
EP0589123B1 (en) A driver circuit for an electronic switch
JPH022238B2 (ja)
KR100510531B1 (ko) 동작 전원전압에 둔감한 지연 스테이지 및 이를 구비하는지연회로
US4321561A (en) Switch operated capacitive oscillator apparatus
KR900012436A (ko) 논리 회로
KR900006192B1 (ko) 백 바이어스 전압 발생기

Legal Events

Date Code Title Description
BV The patent application has lapsed