NL8700541A - Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een plak silicium plaatselijk wordt voorzien van veldoxidegebieden. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een plak silicium plaatselijk wordt voorzien van veldoxidegebieden. Download PDFInfo
- Publication number
- NL8700541A NL8700541A NL8700541A NL8700541A NL8700541A NL 8700541 A NL8700541 A NL 8700541A NL 8700541 A NL8700541 A NL 8700541A NL 8700541 A NL8700541 A NL 8700541A NL 8700541 A NL8700541 A NL 8700541A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- field oxide
- thickness
- wafer
- plasma
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229920001296 polysiloxane Polymers 0.000 title 1
- 230000003647 oxidation Effects 0.000 claims description 49
- 238000007254 oxidation reaction Methods 0.000 claims description 49
- 238000005530 etching Methods 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 70
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 241000293849 Cordylanthus Species 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- -1 silicon oxide nitride Chemical class 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
- H01L21/76218—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8700541A NL8700541A (nl) | 1987-03-06 | 1987-03-06 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een plak silicium plaatselijk wordt voorzien van veldoxidegebieden. |
| EP88200357A EP0284124A1 (fr) | 1987-03-06 | 1988-02-26 | Procédé de fabrication d'un dispositif semi-conducteur comportant un substrat en silicium localement pourvu de régions de champ en oxyde |
| JP63047344A JPS63228739A (ja) | 1987-03-06 | 1988-02-29 | 半導体装置の製造方法 |
| KR1019880002276A KR880011908A (ko) | 1987-03-06 | 1988-03-05 | 반도체 소자 제조방법 |
| US07/453,092 US4952525A (en) | 1987-03-06 | 1989-12-11 | Method of manufacturing a semiconductor device in which a silicon wafer is locally provided with field oxide regions |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8700541 | 1987-03-06 | ||
| NL8700541A NL8700541A (nl) | 1987-03-06 | 1987-03-06 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een plak silicium plaatselijk wordt voorzien van veldoxidegebieden. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8700541A true NL8700541A (nl) | 1988-10-03 |
Family
ID=19849667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8700541A NL8700541A (nl) | 1987-03-06 | 1987-03-06 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een plak silicium plaatselijk wordt voorzien van veldoxidegebieden. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4952525A (fr) |
| EP (1) | EP0284124A1 (fr) |
| JP (1) | JPS63228739A (fr) |
| KR (1) | KR880011908A (fr) |
| NL (1) | NL8700541A (fr) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3092185B2 (ja) * | 1990-07-30 | 2000-09-25 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US5413966A (en) * | 1990-12-20 | 1995-05-09 | Lsi Logic Corporation | Shallow trench etch |
| US5290396A (en) * | 1991-06-06 | 1994-03-01 | Lsi Logic Corporation | Trench planarization techniques |
| US5225358A (en) * | 1991-06-06 | 1993-07-06 | Lsi Logic Corporation | Method of forming late isolation with polishing |
| US5252503A (en) * | 1991-06-06 | 1993-10-12 | Lsi Logic Corporation | Techniques for forming isolation structures |
| US5248625A (en) * | 1991-06-06 | 1993-09-28 | Lsi Logic Corporation | Techniques for forming isolation structures |
| US6432759B1 (en) * | 1992-11-24 | 2002-08-13 | Lsi Logic Corporation | Method of forming source and drain regions for CMOS devices |
| JPH08316223A (ja) * | 1995-05-16 | 1996-11-29 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6008526A (en) * | 1995-05-30 | 1999-12-28 | Samsung Electronics Co., Ltd. | Device isolation layer for a semiconductor device |
| US5861339A (en) * | 1995-10-27 | 1999-01-19 | Integrated Device Technology, Inc. | Recessed isolation with double oxidation |
| US5672538A (en) * | 1995-12-04 | 1997-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd | Modified locus isolation process in which surface topology of the locos oxide is smoothed |
| US5686346A (en) * | 1996-03-26 | 1997-11-11 | Advanced Micro Devices, Inc. | Method for enhancing field oxide thickness at field oxide perimeters |
| US5652177A (en) * | 1996-08-22 | 1997-07-29 | Chartered Semiconductor Manufacturing Pte Ltd | Method for fabricating a planar field oxide region |
| US5930647A (en) | 1997-02-27 | 1999-07-27 | Micron Technology, Inc. | Methods of forming field oxide and active area regions on a semiconductive substrate |
| US6268266B1 (en) * | 1999-10-22 | 2001-07-31 | United Microelectronics Corp. | Method for forming enhanced FOX region of low voltage device in high voltage process |
| US6268267B1 (en) * | 2000-01-24 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company | Silicon-oxynitride-oxide (SXO) continuity film pad to recessed bird's beak of LOCOS |
| WO2003032378A1 (fr) * | 2001-10-08 | 2003-04-17 | Infineon Technologies Ag | Procede de fabrication d'une structure de grille destinee a un transistor mos |
| US20040007755A1 (en) * | 2002-07-12 | 2004-01-15 | Texas Instruments Incorporated | Field oxide profile of an isolation region associated with a contact structure of a semiconductor device |
| US6949448B2 (en) * | 2003-04-01 | 2005-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Local oxidation of silicon (LOCOS) method employing graded oxidation mask |
| US20060057765A1 (en) * | 2004-09-13 | 2006-03-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor including multiple lenses and method of manufacture thereof |
| US20080299780A1 (en) * | 2007-06-01 | 2008-12-04 | Uv Tech Systems, Inc. | Method and apparatus for laser oxidation and reduction |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US204A (en) * | 1837-05-22 | Construction of and mode of | ||
| NL173110C (nl) * | 1971-03-17 | 1983-12-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht. |
| US4378565A (en) * | 1980-10-01 | 1983-03-29 | General Electric Company | Integrated circuit and method of making same |
| US4385975A (en) * | 1981-12-30 | 1983-05-31 | International Business Machines Corp. | Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate |
| JPS58147041A (ja) * | 1982-02-24 | 1983-09-01 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58168264A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58169929A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体装置の製造方法 |
| FR2529714A1 (fr) * | 1982-07-01 | 1984-01-06 | Commissariat Energie Atomique | Procede de realisation de l'oxyde de champ d'un circuit integre |
| US4539744A (en) * | 1984-02-03 | 1985-09-10 | Fairchild Camera & Instrument Corporation | Semiconductor planarization process and structures made thereby |
| US4612701A (en) * | 1984-03-12 | 1986-09-23 | Harris Corporation | Method to reduce the height of the bird's head in oxide isolated processes |
| ATE45248T1 (de) * | 1984-12-13 | 1989-08-15 | Siemens Ag | Verfahren zum herstellen einer die aktiven bereiche einer hochintegrierten cmos-schaltung trennenden isolation. |
| NL8501720A (nl) * | 1985-06-14 | 1987-01-02 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak plaatselijk wordt voorzien van veldoxide met kanaalonderbreker. |
-
1987
- 1987-03-06 NL NL8700541A patent/NL8700541A/nl not_active Application Discontinuation
-
1988
- 1988-02-26 EP EP88200357A patent/EP0284124A1/fr not_active Withdrawn
- 1988-02-29 JP JP63047344A patent/JPS63228739A/ja active Pending
- 1988-03-05 KR KR1019880002276A patent/KR880011908A/ko not_active Application Discontinuation
-
1989
- 1989-12-11 US US07/453,092 patent/US4952525A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63228739A (ja) | 1988-09-22 |
| KR880011908A (ko) | 1988-10-31 |
| EP0284124A1 (fr) | 1988-09-28 |
| US4952525A (en) | 1990-08-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |