NL8500218A - Halfgeleiderinrichting met tweedimensionaal ladingsdragergas. - Google Patents

Halfgeleiderinrichting met tweedimensionaal ladingsdragergas. Download PDF

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Publication number
NL8500218A
NL8500218A NL8500218A NL8500218A NL8500218A NL 8500218 A NL8500218 A NL 8500218A NL 8500218 A NL8500218 A NL 8500218A NL 8500218 A NL8500218 A NL 8500218A NL 8500218 A NL8500218 A NL 8500218A
Authority
NL
Netherlands
Prior art keywords
layer
semiconductor layer
semiconductor
semiconductor device
mesa
Prior art date
Application number
NL8500218A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8500218A priority Critical patent/NL8500218A/nl
Priority to DE8585202110T priority patent/DE3574434D1/de
Priority to EP85202110A priority patent/EP0191201B1/en
Priority to US06/819,650 priority patent/US4677457A/en
Priority to JP61013959A priority patent/JPH07123164B2/ja
Publication of NL8500218A publication Critical patent/NL8500218A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
NL8500218A 1985-01-28 1985-01-28 Halfgeleiderinrichting met tweedimensionaal ladingsdragergas. NL8500218A (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL8500218A NL8500218A (nl) 1985-01-28 1985-01-28 Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.
DE8585202110T DE3574434D1 (en) 1985-01-28 1985-12-19 Semiconductor device with bidimensional charge carrier gas
EP85202110A EP0191201B1 (en) 1985-01-28 1985-12-19 Semiconductor device with bidimensional charge carrier gas
US06/819,650 US4677457A (en) 1985-01-28 1986-01-17 Semiconductor device with bidimensional charge carrier gas
JP61013959A JPH07123164B2 (ja) 1985-01-28 1986-01-27 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8500218A NL8500218A (nl) 1985-01-28 1985-01-28 Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.
NL8500218 1985-01-28

Publications (1)

Publication Number Publication Date
NL8500218A true NL8500218A (nl) 1986-08-18

Family

ID=19845433

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8500218A NL8500218A (nl) 1985-01-28 1985-01-28 Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.

Country Status (5)

Country Link
US (1) US4677457A (ja)
EP (1) EP0191201B1 (ja)
JP (1) JPH07123164B2 (ja)
DE (1) DE3574434D1 (ja)
NL (1) NL8500218A (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3687049T2 (de) * 1985-04-05 1993-03-25 Nippon Electric Co Bipolare eigenschaften aufweisender transistor mit heterouebergang.
NL8703119A (nl) * 1987-12-23 1989-07-17 Philips Nv Element voor toepassing in een elektrische schakeling.
US5381027A (en) * 1988-01-26 1995-01-10 Hitachi, Ltd. Semiconductor device having a heterojunction and a two dimensional gas as an active layer
US4839310A (en) * 1988-01-27 1989-06-13 Massachusetts Institute Of Technology High mobility transistor with opposed-gates
EP0366861A1 (en) * 1988-10-20 1990-05-09 International Business Machines Corporation Semiconductor ballistic transistor
KR910013568A (ko) * 1989-12-31 1991-08-08 김광호 화합물 반도체 장치 및 그 제조방법
EP0517842A1 (en) * 1990-02-26 1992-12-16 Symetrix Corporation Electronic devices and methods of constructing and utilizing same
NL9000698A (nl) * 1990-03-24 1991-10-16 Koninkl Philips Electronics Nv Element voor toepassing in een elektrische schakeling.
JP2626220B2 (ja) * 1990-09-17 1997-07-02 日本電気株式会社 電界効果トランジスタ及びその製造方法
DE4303598C2 (de) * 1993-02-08 1999-04-29 Marcus Dr Besson Halbleiterbauelement, insbesondere Feldeffekttransistor mit vergrabenem Gate
GB2279806B (en) * 1993-07-05 1997-05-21 Toshiba Cambridge Res Center Semiconductor device and method of making same
TW354411B (en) * 1996-09-27 1999-03-11 Sanyo Electric Co Semiconductor device and its manufacturing process
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7692298B2 (en) * 2004-09-30 2010-04-06 Sanken Electric Co., Ltd. III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact
US7432526B2 (en) 2005-12-20 2008-10-07 Palo Alto Research Center Incorporated Surface-passivated zinc-oxide based sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2504732A1 (fr) * 1981-04-27 1982-10-29 Thomson Csf Transistor tunnel a double heterojonction
JPS5853863A (ja) * 1981-09-26 1983-03-30 Fujitsu Ltd 半導体装置の製造方法
JPS5891682A (ja) * 1981-11-27 1983-05-31 Hitachi Ltd 半導体装置
JPS58147173A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 半導体装置
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
JPS58162070A (ja) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS5932174A (ja) * 1982-08-16 1984-02-21 Toshiba Corp 電界効果トランジスタの製造方法
FR2543739B1 (fr) * 1983-03-30 1986-04-18 Radiotechnique Compelec Procede de realisation d'un transistor bipolaire haute tension
JPS59184573A (ja) * 1983-04-05 1984-10-19 Nec Corp 電界効果トランジスタ
JPS59218778A (ja) * 1983-05-27 1984-12-10 Fujitsu Ltd 半導体装置及びその製造方法
US4550331A (en) * 1983-07-29 1985-10-29 Rockwell International Corporation Multilayer modulation doped heterostructure charge coupled device

Also Published As

Publication number Publication date
US4677457A (en) 1987-06-30
EP0191201B1 (en) 1989-11-23
JPH07123164B2 (ja) 1995-12-25
EP0191201A1 (en) 1986-08-20
DE3574434D1 (en) 1989-12-28
JPS61177782A (ja) 1986-08-09

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BV The patent application has lapsed