DE3574434D1 - Semiconductor device with bidimensional charge carrier gas - Google Patents

Semiconductor device with bidimensional charge carrier gas

Info

Publication number
DE3574434D1
DE3574434D1 DE8585202110T DE3574434T DE3574434D1 DE 3574434 D1 DE3574434 D1 DE 3574434D1 DE 8585202110 T DE8585202110 T DE 8585202110T DE 3574434 T DE3574434 T DE 3574434T DE 3574434 D1 DE3574434 D1 DE 3574434D1
Authority
DE
Germany
Prior art keywords
semiconductor device
carrier gas
charge carrier
bidimensional
bidimensional charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585202110T
Other languages
English (en)
Inventor
Joachim Hermann Wolter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3574434D1 publication Critical patent/DE3574434D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8585202110T 1985-01-28 1985-12-19 Semiconductor device with bidimensional charge carrier gas Expired DE3574434D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8500218A NL8500218A (nl) 1985-01-28 1985-01-28 Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.

Publications (1)

Publication Number Publication Date
DE3574434D1 true DE3574434D1 (en) 1989-12-28

Family

ID=19845433

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585202110T Expired DE3574434D1 (en) 1985-01-28 1985-12-19 Semiconductor device with bidimensional charge carrier gas

Country Status (5)

Country Link
US (1) US4677457A (de)
EP (1) EP0191201B1 (de)
JP (1) JPH07123164B2 (de)
DE (1) DE3574434D1 (de)
NL (1) NL8500218A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3687049T2 (de) * 1985-04-05 1993-03-25 Nippon Electric Co Bipolare eigenschaften aufweisender transistor mit heterouebergang.
NL8703119A (nl) * 1987-12-23 1989-07-17 Philips Nv Element voor toepassing in een elektrische schakeling.
US5381027A (en) * 1988-01-26 1995-01-10 Hitachi, Ltd. Semiconductor device having a heterojunction and a two dimensional gas as an active layer
US4839310A (en) * 1988-01-27 1989-06-13 Massachusetts Institute Of Technology High mobility transistor with opposed-gates
EP0366861A1 (de) * 1988-10-20 1990-05-09 International Business Machines Corporation Ballistischer Halbleitertransistor
KR910013568A (ko) * 1989-12-31 1991-08-08 김광호 화합물 반도체 장치 및 그 제조방법
JPH05503609A (ja) * 1990-02-26 1993-06-10 シンメトリックス・コーポレーション 電子デバイス、それらの製造法および利用法
NL9000698A (nl) * 1990-03-24 1991-10-16 Koninkl Philips Electronics Nv Element voor toepassing in een elektrische schakeling.
JP2626220B2 (ja) * 1990-09-17 1997-07-02 日本電気株式会社 電界効果トランジスタ及びその製造方法
DE4303598C2 (de) * 1993-02-08 1999-04-29 Marcus Dr Besson Halbleiterbauelement, insbesondere Feldeffekttransistor mit vergrabenem Gate
GB2279806B (en) * 1993-07-05 1997-05-21 Toshiba Cambridge Res Center Semiconductor device and method of making same
TW354411B (en) * 1996-09-27 1999-03-11 Sanyo Electric Co Semiconductor device and its manufacturing process
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP4389935B2 (ja) * 2004-09-30 2009-12-24 サンケン電気株式会社 半導体装置
US7432526B2 (en) 2005-12-20 2008-10-07 Palo Alto Research Center Incorporated Surface-passivated zinc-oxide based sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2504732A1 (fr) * 1981-04-27 1982-10-29 Thomson Csf Transistor tunnel a double heterojonction
JPS5853863A (ja) * 1981-09-26 1983-03-30 Fujitsu Ltd 半導体装置の製造方法
JPS5891682A (ja) * 1981-11-27 1983-05-31 Hitachi Ltd 半導体装置
JPS58147173A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 半導体装置
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
JPS58162070A (ja) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS5932174A (ja) * 1982-08-16 1984-02-21 Toshiba Corp 電界効果トランジスタの製造方法
FR2543739B1 (fr) * 1983-03-30 1986-04-18 Radiotechnique Compelec Procede de realisation d'un transistor bipolaire haute tension
JPS59184573A (ja) * 1983-04-05 1984-10-19 Nec Corp 電界効果トランジスタ
JPS59218778A (ja) * 1983-05-27 1984-12-10 Fujitsu Ltd 半導体装置及びその製造方法
US4550331A (en) * 1983-07-29 1985-10-29 Rockwell International Corporation Multilayer modulation doped heterostructure charge coupled device

Also Published As

Publication number Publication date
JPS61177782A (ja) 1986-08-09
EP0191201B1 (de) 1989-11-23
NL8500218A (nl) 1986-08-18
US4677457A (en) 1987-06-30
JPH07123164B2 (ja) 1995-12-25
EP0191201A1 (de) 1986-08-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee